| Fluorescent SiC as a new material for white LEDs M Syväjärvi, J Müller, JW Sun, V Grivickas, Y Ou, V Jokubavicius, P Hens, ... Physica Scripta 2012 (T148), 014002, 2012 | 47 | 2012 |
| Excess carrier recombination lifetime of bulk n-type 3C-SiC V Grivickas, G Manolis, K Gulbinas, K Jarašiūnas, M Kato Applied Physics Letters 95 (24), 2009 | 22 | 2009 |
| Surface recombination investigation in thin 4H-SiC layers K Gulbinas, V Grivickas, HP Mahabadi, M Usman, A Hallen Materials Science 17 (2), 119-124, 2011 | 21 | 2011 |
| Carrier trapping and recombination in TlGaSe2 layered crystals V Grivickas, A Odrinski, V Bikbajevas, K Gulbinas physica status solidi (b) 250 (1), 160-168, 2013 | 18 | 2013 |
| 4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption SS Suvanam, K Gulbinas, M Usman, MK Linnarson, DM Martin, J Linnros, ... Journal of Applied Physics 117 (10), 2015 | 13 | 2015 |
| Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2semiconductors V Grivickas, K Gulbinas, V Gavryushin, V Bikbajevas, OV Korolik, ... physica status solidi (RRL)–Rapid Research Letters 8 (7), 639-642, 2014 | 7 | 2014 |
| Examination of Photoluminescence Temperature Dependencies in NB Co-doped 6H-SiC V Gavryushin, K Gulbinas, V Grivickas, M Karaliūnas, M Stasiūpnas, ... IOP Conference Series: Materials Science and Engineering 56 (1), 012003, 2014 | 7 | 2014 |
| Optical absorption related to Fe impurities in TlGaSe2 V Grivickas, V Gavryushin, P Grivickas, A Galeckas, V Bikbajevas, ... physica status solidi (a) 208 (9), 2186-2192, 2011 | 7 | 2011 |
| Band edge photoluminescence of undoped and doped TlInS2 layered crystals OV Korolik, SAD Kaabi, K Gulbinas, NV Mazanik, NA Drozdov, ... Journal of Luminescence 187, 507-512, 2017 | 6 | 2017 |
| Temperature Dependencies of Free-Carrier-Absorption Lifetime in Fluorescent 6H-SiC Layers G Manolis, K Gulbinas, V Grivickas, V Jokubavičius, MK Linnarsson, ... IOP Conference Series: Materials Science and Engineering 56 (1), 012006, 2014 | 6 | 2014 |
| Raman scattering and carrier diffusion study in heavily Co-doped 6H-SiC layers K Gulbinas, P Ščajev, V Bikbajavas, V Grivickas, OV Korolik, AV Mazanik, ... IOP Conference Series: Materials Science and Engineering 56 (1), 012005, 2014 | 6 | 2014 |
| Intrinsic shape of free carrier absorption spectra in 4H-SiC P Grivickas, K Redeckas, K Gulbinas, AM Conway, LF Voss, M Bora, ... Journal of Applied Physics 125 (22), 2019 | 5 | 2019 |
| Strong photoacoustic oscillations in layered TlGaSe2 semiconductor V Grivickas, V Bikbajevas, K Gulbinas, V Gavryushin, J Linnros physica status solidi (b) 244 (12), 4624-4628, 2007 | 5 | 2007 |
| Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation K Gulbinas, V Grivickas, V Gavryushin Applied Physics Letters 105 (24), 2014 | 4 | 2014 |
| Carrier Lifetimes and Influence of In-Grown Defects in NB Co-Doped 6H-SiC V Grivickas, K Gulbinas, V Jokubavičius, JW Sun, M Karaliūnas, ... IOP Conference Series: Materials Science and Engineering 56 (1), 012004, 2014 | 4 | 2014 |
| Effect of Nuclear Scattering Damage at SiO2/SiC and Al2O3/SiC Interfaces – a Radiation Hardness Study of Dielectrics M Usman, A Hallén, K Gulbinas, V Grivickas Materials Science Forum 717, 805-808, 2012 | 4 | 2012 |
| A comparison of free carrier absorption and capacitance voltage methods for interface trap measurements SS Suvanam, M Usman, K Gulbinas, V Grivickas, A Hallén Materials Science Forum 740, 465-468, 2013 | 3 | 2013 |
| Internal Stress in Freestanding 3C‐SiC Grown on Si and Relation to Carrier Lifetime V Grivickas, K Gulbinas, G Manolis, M Kato, J Linnros AIP Conference Proceedings 1292 (1), 91-94, 2010 | 3 | 2010 |
| Carrier lifetimes in fluorescent 6H-SiC for LEDs application V Grivickas, K Gulbinas, V Jokubavičius, JW Sun, Y Ou, H Ou, ... Lithuanian National Physics Conference, 2011 | 2 | 2011 |
| Photo-acoustic response and optical features of 2D-TlGaSe2 and GaAs semiconductors V Grivickas, K Gulbinas, V Bikbajevas, P Grivickas Lithuanian Journal of Physics 61 (2), 2021 | 1 | 2021 |
