| Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ... Journal of Applied Physics 93 (1), 1-13, 2003 | 1223 | 2003 |
| Advances in wide bandgap materials for semiconductor spintronics SJ Pearton, CR Abernathy, DP Norton, AF Hebard, YD Park, LA Boatner, ... Materials Science and Engineering: R: Reports 40 (4), 137-168, 2003 | 568 | 2003 |
| Magnetic properties of n-GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ... Applied Physics Letters 80 (21), 3964-3966, 2002 | 448 | 2002 |
| Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN ME Overberg, CR Abernathy, SJ Pearton, NA Theodoropoulou, ... Applied Physics Letters 79 (9), 1312-1314, 2001 | 388 | 2001 |
| Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ... Applied Physics Letters 86 (24), 241904, 2005 | 363 | 2005 |
| Magnetic and structural properties of Mn-implanted GaN N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ... Applied Physics Letters 78 (22), 3475-3477, 2001 | 358 | 2001 |
| Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn) P: C N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ... Physical review letters 89 (10), 107203, 2002 | 289 | 2002 |
| Effect of temperature on metal–oxide–semiconductor field-effect transistors F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ... Applied Physics Letters 73 (26), 3893-3895, 1998 | 284 | 1998 |
| 1.54‐μm photoluminescence from Er‐implanted GaN and AlN RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ... Applied Physics Letters 65 (8), 992-994, 1994 | 273 | 1994 |
| Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik Applied Physics Letters 55 (17), 1750-1752, 1989 | 263 | 1989 |
| Wet chemical etching of AlN JR Mileham, SJ Pearton, CR Abernathy, JD MacKenzie, RJ Shul, ... Applied physics letters 67 (8), 1119-1121, 1995 | 238 | 1995 |
| Influence of MgO and passivation on AlGaN/GaN high-electron-mobility transistors B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ... Applied Physics Letters 80 (9), 1661-1663, 2002 | 224 | 2002 |
| Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN SJ Pearton, CR Abernathy, F Ren Applied physics letters 64 (17), 2294-2296, 1994 | 218 | 1994 |
| Gallium nitride processing for electronics, sensors and spintronics SJ Pearton, CR Abernathy, F Ren Springer Science & Business Media, 2006 | 199 | 2006 |
| Wide bandgap GaN-based semiconductors for spintronics SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ... Journal of Physics: Condensed Matter 16 (7), R209, 2004 | 196 | 2004 |
| CCl4 doping of GaN grown by metalorganic molecular beam epitaxy CR Abernathy, JD MacKenzie, SJ Pearton, WS Hobson Applied physics letters 66 (15), 1969-1971, 1995 | 181* | 1995 |
| AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using as the gate oxide and surface passivation R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ... Applied physics letters 82 (15), 2530-2532, 2003 | 178 | 2003 |
| Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy SJ Pearton, CR Abernathy, F Ren, JR Lothian, PW Wisk, A Katz Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993 | 177* | 1993 |
| High-density plasma etching of compound semiconductors RJ Shul, GB McClellan, RD Briggs, DJ Rieger, SJ Pearton, CR Abernathy, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (3 …, 1997 | 175 | 1997 |
| Pressure-induced changes in the conductivity of high-electron mobility-transistor membranes BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ... Applied Physics Letters 85 (14), 2962-2964, 2004 | 165 | 2004 |
