| Ultraviolet light-emitting diodes based on group three nitrides A Khan, K Balakrishnan, T Katona Nature photonics 2 (2), 77-84, 2008 | 1127 | 2008 |
| Growth and characterization of cubic GaN H Okumura, K Ohta, G Feuillet, K Balakrishnan, S Chichibu, H Hamaguchi, ... Journal of crystal Growth 178 (1-2), 113-133, 1997 | 227 | 1997 |
| The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN CV Reddy, K Balakrishnan, H Okumura, S Yoshida Applied physics letters 73 (2), 244-246, 1998 | 155 | 1998 |
| High-temperature metal-organic vapor phase epitaxial growth of AlN on sapphire by multi transition growth mode method varying V/III ratio M Imura, K Nakano, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, ... Japanese journal of applied physics 45 (11R), 8639, 2006 | 141 | 2006 |
| Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers M Imura, K Nakano, G Narita, N Fujimoto, N Okada, K Balakrishnan, ... Journal of crystal growth 298, 257-260, 2007 | 127 | 2007 |
| Dislocations in AlN epilayers grown on sapphire substrate by high-temperature metal-organic vapor phase epitaxy M Imura, K Nakano, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, ... Japanese journal of applied physics 46 (4R), 1458, 2007 | 114 | 2007 |
| Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy M Imura, K Nakano, T Kitano, N Fujimoto, G Narita, N Okada, ... Applied physics letters 89 (22), 221901, 2006 | 97 | 2006 |
| Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN H Okumura, H Hamaguchi, T Koizumi, K Balakrishnan, Y Ishida, M Arita, ... Journal of crystal growth 189, 390-394, 1998 | 97 | 1998 |
| Growth of high-quality and crack free AlN layers on sapphire substrate by multi-growth mode modification N Okada, N Kato, S Sato, T Sumii, T Nagai, N Fujimoto, M Imura, ... Journal of crystal growth 298, 349-353, 2007 | 92 | 2007 |
| Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates K Nakano, M Imura, G Narita, T Kitano, Y Hirose, N Fujimoto, N Okada, ... physica status solidi (a) 203 (7), 1632-1635, 2006 | 80 | 2006 |
| Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio M Imura, N Fujimoto, N Okada, K Balakrishnan, M Iwaya, S Kamiyama, ... Journal of crystal growth 300 (1), 136-140, 2007 | 78 | 2007 |
| Nat. Photonics 2, 77 (2008) A Khan, K Balakrishnan, T Katona | 69 | 2007 |
| Analysis of MBE growth mode for GaN epilayers by RHEED H Okumura, K Balakrishnan, H Hamaguchi, T Koizumi, S Chichibu, ... Journal of crystal growth 189, 364-369, 1998 | 64 | 1998 |
| Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy K Balakrishnan, A Bandoh, M Iwaya, S Kamiyama, H Amano, I Akasaki Japanese journal of applied physics 46 (4L), L307, 2007 | 56 | 2007 |
| Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE M Imura, K Nakano, T Kitano, N Fujimoto, N Okada, K Balakrishnan, ... physica status solidi (a) 203 (7), 1626-1631, 2006 | 56 | 2006 |
| Growth of high‐quality AlN at high growth rate by high‐temperature MOVPE N Fujimoto, T Kitano, G Narita, N Okada, K Balakrishnan, M Iwaya, ... physica status solidi c 3 (6), 1617-1619, 2006 | 55 | 2006 |
| Vertical injection thin film deep ultraviolet light emitting diodes with AlGaN multiple-quantum wells active region V Adivarahan, A Heidari, B Zhang, Q Fareed, M Islam, S Hwang, ... Applied physics express 2 (9), 092102, 2009 | 52 | 2009 |
| Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE N Okada, N Kato, S Sato, T Sumii, N Fujimoto, M Imura, K Balakrishnan, ... Journal of crystal growth 300 (1), 141-144, 2007 | 52 | 2007 |
| First demonstration of semipolar deep ultraviolet light emitting diode on m-plane sapphire with AlGaN multiple quantum wells K Balakrishnan, V Adivarahan, Q Fareed, M Lachab, B Zhang, A Khan Japanese Journal of Applied Physics 49 (4R), 040206, 2010 | 50 | 2010 |
| Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN V Adivarahan, Q Fareed, M Islam, T Katona, B Krishnan, A Khan Japanese Journal of Applied Physics 46 (10L), L877, 2007 | 47 | 2007 |
