Dr. Debashis Panda
Dr. Debashis Panda
University of Utah, USA; NUS, Singapore; NCTU, Taiwan; CGU, Taiwan, IIT Kharagpur, India and NIST
Verified email at nist.edu - Homepage
TitleCited byYear
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng
Thin Solid Films 531, 1-20, 2013
1602013
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications
D Panda, TY Tseng
Journal of Materials Science 48 (20), 6849-6877, 2013
1172013
Status and prospects of ZnO-based resistive switching memory devices
FM Simanjuntak, D Panda, KH Wei, TY Tseng
Nanoscale research letters 11 (1), 368, 2016
852016
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
D Panda, CY Huang, TY Tseng
Applied Physics Letters 100 (11), 112901, 2012
692012
Forming-free bipolar resistive switching in nonstoichiometric ceria films
M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ...
Nanoscale research letters 9 (1), 45, 2014
602014
Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films
D Panda, A Dhar, SK Ray
Journal of Applied Physics 108 (10), 104513, 2010
572010
Perovskite Oxides as Resistive Switching Memories: A Review
TYT D Panda
Ferroelectrics, 2014
552014
Nonvolatile Memristive Switching Characteristics of TiO $ _ {\bm 2} $ Films Embedded With Nickel Nanocrystals
D Panda, A Dhar, SK Ray
IEEE Transactions on Nanotechnology 11 (1), 51-55, 2011
532011
Impacts of Co doping on ZnO transparent switching memory device characteristics
FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ...
Applied Physics Letters 108 (18), 183506, 2016
462016
Enhanced switching uniformity in AZO/ZnO1− x/ITO transparent resistive memory devices by bipolar double forming
FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng
Applied Physics Letters 107 (3), 033505, 2015
382015
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant
M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ...
ACS applied materials & interfaces 8 (9), 6127-6136, 2016
342016
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
TYT Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin ...
Journal of Materials Science 50 (21), 6961-6969, 2015
322015
Memory characteristics of nickel nanocrystals with high-k dielectric tunneling barriers
D Panda, S Maikap, A Dhar, SK Ray
Electrochemical and Solid-State Letters 12 (1), H7-H10, 2009
252009
Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer
D Panda, A Dhar, SK Ray
Semiconductor Science and Technology 24 (11), 115020, 2009
232009
Temperature induced complementary switching in titanium oxide resistive random access memory
D Panda, FM Simanjuntak, TY Tseng
AIP Advances 6 (7), 075314, 2016
192016
Optical characteristics of Er3+-doped Ge nanocrystals in sol–gel-derived SiO2 glass
K Das, V Nagarajan, ML NandaGoswami, D Panda, A Dhar, SK Ray
Nanotechnology 18 (9), 095704, 2007
182007
Schottky barrier characteristics of Cobalt–Nickel silicide/n-Si junctions for scaled-Si CMOS applications
D Panda, A Dhar, SK Ray
IEEE Transactions on Electron Devices 55 (9), 2403-2408, 2008
162008
A collective study on modeling and simulation of resistive random access memory
D Panda, PP Sahu, TY Tseng
Nanoscale research letters 13 (1), 8, 2018
132018
Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory
D Panda, PP Sahu
Journal of Applied Physics 121 (20), 204504, 2017
72017
Barrier Potential Engineering in Ti/HfO2/Pt Resistive Random Access Memory
SS Kumar, PP Sahu, D Panda
Journal of Nanoscience and Nanotechnology 17 (12), 9328-9332, 2017
52017
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Articles 1–20