Παρακολούθηση
Yueh Chang (Jackson) Wu
Yueh Chang (Jackson) Wu
TSMC, Taiwan
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα tsmc.com
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Παρατίθεται από
Παρατίθεται από
Έτος
Manufacturable 300mm platform solution for field-free switching SOT-MRAM
K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ...
2019 Symposium on VLSI Circuits, T194-T195, 2019
1422019
Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications
YC Wu, K Garello, W Kim, M Gupta, M Perumkunnil, V Kateel, S Couet, ...
Physical Review Applied 15 (064015), 2021
612021
Synthetic-ferromagnet pinning layers enabling top-pinned magnetic tunnel junctions for high-density embedded magnetic random-access memory
E Liu, YC Wu, S Couet, S Mertens, S Rao, W Kim, K Garello, D Crotti, ...
Physical Review Applied 10 (5), 054054, 2018
232018
Thermal stability analysis and modelling of advanced perpendicular magnetic tunnel junctions
S Van Beek, K Martens, P Roussel, YC Wu, W Kim, S Rao, J Swerts, ...
Aip Advances 8 (5), 2018
212018
Deterministic and field-free voltage-controlled MRAM for high performance and low power applications
YC Wu, W Kim, K Garello, F Yasin, G Jayakumar, S Couet, R Carpenter, ...
2020 IEEE Symposium on VLSI Technology, 1-2, 2020
202020
Top-pinned STT-MRAM devices with high thermal stability hybrid free layers for high-density memory applications
E Liu, J Swerts, YC Wu, A Vaysset, S Couet, S Mertens, S Rao, W Kim, ...
IEEE Transactions on Magnetics 54 (11), 1-5, 2018
112018
Perpendicular magnetic anisotropy of CoFeB\Ta bilayers on ALD HfO2
BF Vermeulen, J Wu, J Swerts, S Couet, IP Radu, G Groeseneken, ...
AIP Advances 7 (5), 2017
112017
Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2
BF Vermeulen, J Wu, J Swerts, S Couet, D Linten, IP Radu, K Temst, ...
Journal of Applied Physics 120 (16), 2016
82016
Impact of ambient temperature on the switching of voltage-controlled perpendicular magnetic tunnel junction
YC Wu, W Kim, S Van Beek, S Couet, R Carpenter, S Rao, S Kundu, ...
Applied Physics Letters 118 (12), 122404, 2021
72021
IEEE Symposium on VLSI Circuit
K Garello, F Yasin, H Hody, S Couet, L Souriau, SH Sharifi, J Swerts, ...
IEEE, New York, 2018
72018
Impact of operating temperature on the electrical and magnetic properties of the bottom-pinned perpendicular magnetic tunnel junctions
YC Wu, W Kim, S Rao, K Garello, S Van Beek, S Couet, E Liu, J Swerts, ...
Applied Physics Letters 113 (14), 2018
52018
Study of precessional switching speed control in voltage-controlled perpendicular magnetic tunnel junction
YC Wu, W Kim, S Couet, K Garello, S Rao, S Van Beek, S Kundu, ...
Aip Advances 10 (3), 2020
42020
Interlayer dipolar coupling in CoFeB-based perpendicular magnetic tunnel junctions
RC Bhatt, LX Ye, WH Chen, CM Lee, JC Wu, T Wu
Journal of Applied Physics 125 (1), 2019
42019
Memory device and method of operating a vcma mtj device
W Kim, YC WU, S Cosemans, GS Kar
US Patent App. 17/344,796, 2021
22021
High speed mram with voltage control of magnetic anisotropy (vcma) effect
YC Wu
22021
High speed MRAM with voltage control of magnetic anisotropy effect
YC Wu
KU Leuven PhD thesis, 2021
22021
The Giant VCMA effect for novel MRAM applications
B Vermeulen
International Nanotechnology Conference on Communication and Cooperation-INC, 2020
2020
Impact of Ambient Temperature on the Switching Behavior of Voltage-Controlled Perpendicular Magnetic Tunnel Junction
YC Wu, W Kim, S Van Beek, S Couet, R Carpenter, S Rao, S Kundu, ...
65th Annual Conference on Magnetism and Magnetic Materials, L2-05, 2020
2020
Temperature dependence of VCMA in SrTiO3\Co\Pt trilayers: insights into the mechanism
B Vermeulen, J Swerts, S Couet, M Popovici, J Wu, W Kim, G Sankar Kar, ...
63rd Annual Conference on Magnetism and Magnetic Materials, Location: Las Veygas, 2019
2019
Study of GHz VCMA precessional switching speed in BEOL compatible perpendicular MTJ
YC Wu, W Kim, S Couet, K Garello, S Rao, B Vermeulen, S Van Beek, ...
64th Annual Conference on Magnetism and Magnetic Materials, Las Vegas, EG-11, 2019
2019
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