| A Tersoff‐based interatomic potential for wurtzite AlN M Tungare, Y Shi, N Tripathi, P Suvarna, F Shahedipour‐Sandvik physica status solidi (a) 208 (7), 1569-1572, 2011 | 53 | 2011 |
| Design and growth of visible-blind and solar-blind III-N APDs on sapphire substrates P Suvarna, M Tungare, JM Leathersich, P Agnihotri, ... Journal of electronic materials 42, 854-858, 2013 | 26 | 2013 |
| The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Journal of Materials Research 26 (23), 2895-2900, 2011 | 20 | 2011 |
| HVPE GaN for high power electronic Schottky diodes RP Tompkins, TA Walsh, MA Derenge, KW Kirchner, S Zhou, CB Nguyen, ... Solid-state electronics 79, 238-243, 2013 | 17 | 2013 |
| Novel Cs-free GaN photocathodes N Tripathi, LD Bell, S Nikzad, M Tungare, PH Suvarna, FS Sandvik Journal of electronic materials 40, 382-387, 2011 | 16 | 2011 |
| Selective area heteroepitaxy of low dimensional a ‐plane and c ‐plane InGaN nanostructures using pulsed MOCVD V Jindal, N Tripathi, M Tungare, O Paschos, P Haldar, ... physica status solidi c 5 (6), 1709-1711, 2008 | 14 | 2008 |
| Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations J Leathersich, P Suvarna, M Tungare, FS Shahedipour-Sandvik Surface science 617, 36-41, 2013 | 12 | 2013 |
| Charge trapping prevention III-Nitride transistor H Kim, M Imam, A Charles, J Wan, M Tungare, CK Choi US Patent 10,211,329, 2019 | 10 | 2019 |
| Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy F Shahedipour-Sandvik, J Leathersich, RP Tompkins, P Suvarna, ... Semiconductor science and technology 28 (7), 074002, 2013 | 9 | 2013 |
| Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD M Tungare, VK Kamineni, F Shahedipour-Sandvik, AC Diebold Thin Solid Films 519 (9), 2929-2932, 2011 | 9 | 2011 |
| Thermal/Chemical Stability of ALD Ru-TaN Thin Films for Gate Electrode Applications M Tungare, S Kumar, M Li, E Eisenbraun Ecs transactions 3 (2), 303, 2006 | 8 | 2006 |
| III-nitride semiconductor device with doped epi structures J Wan, M Tungare, P Kim, SE Park, S Nelson, S Kannan US Patent 9,608,075, 2017 | 7 | 2017 |
| In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates JC Gagnon, M Tungare, X Weng, JM Leathersich, F Shahedipour-Sandvik, ... Journal of electronic materials 41, 865-872, 2012 | 6 | 2012 |
| Crack-free III-nitride structures (> 3.5 μm) on silicon M Tungare, JM Leathersich, N Tripathi, P Suvarna, ... MRS Online Proceedings Library (OPL) 1324, mrss11-1324-d01-04, 2011 | 6 | 2011 |
| Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate M Tungare, X Weng, JM Leathersich, P Suvarna, JM Redwing Journal of Applied Physics 113 (16), 2013 | 5 | 2013 |
| Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces V Jindal, J Grandusky, N Tripathi, M Tungare, F Shahedipour-Sandvik MRS Online Proceedings Library (OPL) 1040, 1040-Q06-02, 2007 | 5 | 2007 |
| Defect-related photoluminescence in Mg-doped GaN nanostructures MA Reshchikov, F Shahedipour-Sandvik, BJ Messer, V Jindal, N Tripathi, ... Physica B: Condensed Matter 404 (23-24), 4903-4906, 2009 | 4 | 2009 |
| Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy JM Leathersich, M Tungare, X Weng, P Suvarna, P Agnihotri, M Evans, ... Journal of electronic materials 42, 833-837, 2013 | 2 | 2013 |
| III-Nitride devices on Si: Challenges and opportunities F Shahedipour-Sandvik, M Tungare, J Leathersich, P Suvarna, ... 2011 International Semiconductor Device Research Symposium (ISDRS), 1-2, 2011 | 2 | 2011 |
| Method of controlling wafer bow in a type III-V semiconductor device SE Park, J Wan, M Tungare, P Kim, S Kannan US Patent 11,387,355, 2022 | 1 | 2022 |
Puneet SuvarnaCollege of Nanoscale Science and EngineeringVerified email at albany.edu
