Record-high-performance hydrogenated In–Ga–Zn–O flexible Schottky diodes Y Magari, SGM Aman, D Koretomo, K Masuda, K Shimpo, H Makino, ... ACS Applied Materials & Interfaces 12 (42), 47739-47746, 2020 | 31 | 2020 |
Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors M Furuta, D Koretomo, Y Magari, SGM Aman, R Higashi, S Hamada Japanese Journal of Applied Physics 58 (9), 090604, 2019 | 25 | 2019 |
Low-temperature (150° C) activation of Ar+ O2+ H2-sputtered In–Ga–Zn–O for thin-film transistors SGM Aman, Y Magari, K Shimpo, Y Hirota, H Makino, D Koretomo, ... Applied Physics Express 11 (8), 081101, 2018 | 18 | 2018 |
Reliability improvement of IGZO‐TFT in hybrid process with LTPS M Aman, Y Takeda, K Ito, K Yamamoto, K Tanaka, H Matsukizono, ... Journal of the Society for Information Display 29 (5), 416-427, 2021 | 16 | 2021 |
Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors SGM Aman, D Koretomo, Y Magari, M Furuta IEEE Transactions on Electron Devices 65 (8), 3257-3263, 2018 | 15 | 2018 |
Low-temperature (150° C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel Y Magari, SGM Aman, D Koretomo, K Masuda, K Shimpo, M Furura Japanese Journal of Applied Physics 59 (SG), SGGJ04, 2020 | 13 | 2020 |
24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS K Ito, A Mehadi, M Sano, S Murashige, I Ishida, Y Takeda, H Matsukizono, ... SID Symposium Digest of Technical Papers 51 (1), 343-346, 2020 | 9 | 2020 |
Automotive OLED display with high mobility top gate IGZO TFT backplane Y Takeda, M Aman, S Murashige, K Ito, I Ishida, H Matsukizono, N Makita ITE Transactions on Media Technology and Applications 8 (4), 224-229, 2020 | 7 | 2020 |
Advanced hybrid process with back contact IGZO‐TFT M Honjo, Y Takeda, M Aman, S Kobayashi, K Kitoh, K Ito, K Tanaka, ... Journal of the Society for Information Display 30 (5), 471-481, 2022 | 5 | 2022 |
Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices S Kono, Y Magari, M Mori, SGM Aman, N Fruehauf, H Furuta, M Furuta Japanese Journal of Applied Physics 60 (SB), SBBM05, 2021 | 5 | 2021 |
Correlation between passivation film density and reliability of In–Ga–Zn–O thin-film transistors SGM Aman, M Furuta Japanese Journal of Applied Physics 57 (8), 088001, 2018 | 3 | 2018 |
P‐12: Activation of IGZO Devices at 150° C via Reduction Process Using Hydrogen Gas During Sputtering Y Magari, SG Mehadi Aman, D Sasaki, M Furuta SID Symposium Digest of Technical Papers 52 (1), 1096-1099, 2021 | 2 | 2021 |
Low temperature processes for metal-oxide thin film transistors N Fruehauf, M Herrmann, H Baur, M Aman 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and …, 2015 | 2 | 2015 |
20‐1: Distinguished Paper: Advanced Hybrid Process with Back Contact IGZO‐TFT M Honjo, Y Takeda, M Aman, K Ito, K Tanaka, H Matsukizono, ... SID Symposium Digest of Technical Papers 53 (1), 214-217, 2022 | | 2022 |
Layer Reduction of Hybrid TFT Towards 6.6 inch AMOLED Mass Production S KOBAYASHI, Y TAKEDA, M HONJYO, M AMAN, K KITOH, K ITO, ... Proceedings of the International Display Workshops (Web) 29, 7-2, 2022 | | 2022 |
High Performance TFTs with IGZO and LTPS Hybrid Structure for AMOLED Display M Shogo, A Mehadi, T Yujiro, I Izumi, S Masahito, Y Kaoru, I Kazuatsu, ... Proceedings of the International Display Workshops, 132, 2021 | | 2021 |
7‐1: Distinguished Paper: Reliability Improvement of IGZO‐TFT in Hybrid Process with LTPS M Aman, Y Takeda, K Ito, K Yamamoto, K Tanaka, H Matsukizono, ... SID Symposium Digest of Technical Papers 52 (1), 57-60, 2021 | | 2021 |
Development of high mobility top gate IGZO-TFT for Automotive OLED display. T Yujiro, M Aman, M Shogo, I Kazuatsu, I Izumi, N Shinji, M Hiroshi, ... Proceedings of the International Display Workshops, 468, 2019 | | 2019 |
Control of Interfacial and Bulk Defects in In–Ga–Zn–O Thin-Film Transistors toward Flexible Electronics SG AMAN 高知工科大学, 2018 | | 2018 |
(Invited) Low-Temperature Activation Method for InGaZnOx Thin-Film Transistors M Furuta, ASG Mehadi, Y Magari, K Daichi Electrochemical Society Meeting Abstracts aimes2018, 1218-1218, 2018 | | 2018 |