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SGM Aman, Mehadi Aman
SGM Aman, Mehadi Aman
Sharp corp
Verified email at sharp.co.jp
Title
Cited by
Cited by
Year
Record-high-performance hydrogenated In–Ga–Zn–O flexible Schottky diodes
Y Magari, SGM Aman, D Koretomo, K Masuda, K Shimpo, H Makino, ...
ACS Applied Materials & Interfaces 12 (42), 47739-47746, 2020
312020
Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors
M Furuta, D Koretomo, Y Magari, SGM Aman, R Higashi, S Hamada
Japanese Journal of Applied Physics 58 (9), 090604, 2019
252019
Low-temperature (150° C) activation of Ar+ O2+ H2-sputtered In–Ga–Zn–O for thin-film transistors
SGM Aman, Y Magari, K Shimpo, Y Hirota, H Makino, D Koretomo, ...
Applied Physics Express 11 (8), 081101, 2018
182018
Reliability improvement of IGZO‐TFT in hybrid process with LTPS
M Aman, Y Takeda, K Ito, K Yamamoto, K Tanaka, H Matsukizono, ...
Journal of the Society for Information Display 29 (5), 416-427, 2021
162021
Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors
SGM Aman, D Koretomo, Y Magari, M Furuta
IEEE Transactions on Electron Devices 65 (8), 3257-3263, 2018
152018
Low-temperature (150° C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
Y Magari, SGM Aman, D Koretomo, K Masuda, K Shimpo, M Furura
Japanese Journal of Applied Physics 59 (SG), SGGJ04, 2020
132020
24‐1: Invited Paper: Development of High Quality IGZO‐TFT with Same On‐Current as LTPS
K Ito, A Mehadi, M Sano, S Murashige, I Ishida, Y Takeda, H Matsukizono, ...
SID Symposium Digest of Technical Papers 51 (1), 343-346, 2020
92020
Automotive OLED display with high mobility top gate IGZO TFT backplane
Y Takeda, M Aman, S Murashige, K Ito, I Ishida, H Matsukizono, N Makita
ITE Transactions on Media Technology and Applications 8 (4), 224-229, 2020
72020
Advanced hybrid process with back contact IGZO‐TFT
M Honjo, Y Takeda, M Aman, S Kobayashi, K Kitoh, K Ito, K Tanaka, ...
Journal of the Society for Information Display 30 (5), 471-481, 2022
52022
Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices
S Kono, Y Magari, M Mori, SGM Aman, N Fruehauf, H Furuta, M Furuta
Japanese Journal of Applied Physics 60 (SB), SBBM05, 2021
52021
Correlation between passivation film density and reliability of In–Ga–Zn–O thin-film transistors
SGM Aman, M Furuta
Japanese Journal of Applied Physics 57 (8), 088001, 2018
32018
P‐12: Activation of IGZO Devices at 150° C via Reduction Process Using Hydrogen Gas During Sputtering
Y Magari, SG Mehadi Aman, D Sasaki, M Furuta
SID Symposium Digest of Technical Papers 52 (1), 1096-1099, 2021
22021
Low temperature processes for metal-oxide thin film transistors
N Fruehauf, M Herrmann, H Baur, M Aman
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and …, 2015
22015
20‐1: Distinguished Paper: Advanced Hybrid Process with Back Contact IGZO‐TFT
M Honjo, Y Takeda, M Aman, K Ito, K Tanaka, H Matsukizono, ...
SID Symposium Digest of Technical Papers 53 (1), 214-217, 2022
2022
Layer Reduction of Hybrid TFT Towards 6.6 inch AMOLED Mass Production
S KOBAYASHI, Y TAKEDA, M HONJYO, M AMAN, K KITOH, K ITO, ...
Proceedings of the International Display Workshops (Web) 29, 7-2, 2022
2022
High Performance TFTs with IGZO and LTPS Hybrid Structure for AMOLED Display
M Shogo, A Mehadi, T Yujiro, I Izumi, S Masahito, Y Kaoru, I Kazuatsu, ...
Proceedings of the International Display Workshops, 132, 2021
2021
7‐1: Distinguished Paper: Reliability Improvement of IGZO‐TFT in Hybrid Process with LTPS
M Aman, Y Takeda, K Ito, K Yamamoto, K Tanaka, H Matsukizono, ...
SID Symposium Digest of Technical Papers 52 (1), 57-60, 2021
2021
Development of high mobility top gate IGZO-TFT for Automotive OLED display.
T Yujiro, M Aman, M Shogo, I Kazuatsu, I Izumi, N Shinji, M Hiroshi, ...
Proceedings of the International Display Workshops, 468, 2019
2019
Control of Interfacial and Bulk Defects in In–Ga–Zn–O Thin-Film Transistors toward Flexible Electronics
SG AMAN
高知工科大学, 2018
2018
(Invited) Low-Temperature Activation Method for InGaZnOx Thin-Film Transistors
M Furuta, ASG Mehadi, Y Magari, K Daichi
Electrochemical Society Meeting Abstracts aimes2018, 1218-1218, 2018
2018
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