| Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm J Lemettinen, N Chowdhury, H Okumura, I Kim, S Suihkonen, T Palacios IEEE Electron Device Letters 40 (8), 1245-1248, 2019 | 36 | 2019 |
| MOVPE growth of nitrogen-and aluminum-polar AlN on 4H-SiC J Lemettinen, H Okumura, I Kim, M Rudzinski, J Grzonka, T Palacios, ... Journal of Crystal Growth 487, 50-56, 2018 | 36 | 2018 |
| MOVPE growth of N-polar AlN on 4H-SiC: Effect of substrate miscut on layer quality J Lemettinen, H Okumura, I Kim, C Kauppinen, T Palacios, S Suihkonen Journal of Crystal Growth 487, 12-16, 2018 | 23 | 2018 |
| Aluminum nitride transition layer for power electronics applications grown by plasma-enhanced atomic layer deposition H Seppänen, I Kim, J Etula, E Ubyivovk, A Bouravleuv, H Lipsanen Materials 12 (3), 406, 2019 | 19 | 2019 |
| Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ... Applied Physics Letters 115 (6), 2019 | 18 | 2019 |
| Elimination of Lateral Resistance and Current Crowding in Large‐Area LEDs by Composition Grading and Diffusion‐Driven Charge Transport P Kivisaari, I Kim, S Suihkonen, J Oksanen Advanced Electronic Materials 3 (6), 1700103, 2017 | 16 | 2017 |
| Diffusion-Driven Charge Transport in Light Emitting Devices JOSS Iurii Kim, Pyry Kivisaari Materials 10 (12), 2017 | 11 | 2017 |
| MOVPE growth of GaN on patterned 6-inch Si wafer I Kim, J Holmi, R Raju, A Haapalinna, S Suihkonen Journal of Physics Communications 4 (4), 045010, 2020 | 8 | 2020 |
| Elimination of resistive losses in large-area LEDs by new diffusion-driven devices P Kivisaari, I Kim, S Suihkonen, J Oksanen Light-Emitting Diodes: Materials, Devices, and Applications for Solid State …, 2017 | 7 | 2017 |
| Back‐Contacted Carrier Injection for Scalable GaN Light Emitters I Kim, C Kauppinen, I Radevici, P Kivisaari, J Oksanen physica status solidi (a) 219 (2), 2100461, 2022 | 2 | 2022 |
| Approaches for optimizing III-N based devices I Kim Aalto University, 2022 | | 2022 |
| Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE KY Shubina, AM Mizerov, SN Timoshnev, DV Mokhov, EV Nikitina, I Kim, ... Journal of Physics: Conference Series 1410 (1), 012014, 2019 | | 2019 |
Sami SuihkonenSenior Scientist / VTTVerified email at vtt.fi
