Iron and its complexes in silicon AA Istratov, H Hieslmair, ER Weber
Applied Physics A 69 (1), 13-44, 1999
717 1999 Iron contamination in silicon technology AA Istratov, H Hieslmair, ER Weber
Applied Physics A 70, 489-534, 2000
468 2000 Intrinsic diffusion coefficient of interstitial copper in silicon AA Istratov, C Flink, H Hieslmair, ER Weber, T Heiser
Physical review letters 81 (6), 1243, 1998
306 1998 Gettering of metallic impurities in photovoltaic silicon SA McHugo, H Hieslmair, ER Weber
Applied Physics A 64, 127-137, 1997
147 1997 Electrical and recombination properties of copper‐silicide precipitates in silicon AA Istratov, H Hedemann, M Seibt, OF Vyvenko, W Schröter, T Heiser, ...
Journal of The Electrochemical Society 145 (11), 3889, 1998
143 1998 X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in … OF Vyvenko, T Buonassisi, AA Istratov, H Hieslmair, AC Thompson, ...
Journal of Applied Physics 91 (6), 3614-3617, 2002
111 2002 Diffusion, solubility and gettering of copper in silicon AA Istratov, C Flink, H Hieslmair, SA McHugo, ER Weber
Materials Science and Engineering: B 72 (2-3), 99-104, 2000
99 2000 Solar cell structures, photovoltaic panels and corresponding processes H Hieslmair
US Patent 8,853,527, 2014
97 2014 Out-diffusion and precipitation of copper in silicon: an electrostatic model C Flink, H Feick, SA McHugo, W Seifert, H Hieslmair, T Heiser, AA Istratov, ...
Physical Review Letters 85 (23), 4900, 2000
88 2000 Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications H Hieslmair, VK Dioumaev, S Chiruvolu, H Du
US Patent 8,632,702, 2014
84 2014 Dynamic design of solar cell structures, photovoltaic modules and corresponding processes H Hieslmair
US Patent App. 12/070,381, 2008
77 2008 Gettering of iron by oxygen precipitates H Hieslmair, AA Istratov, SA McHugo, C Flink, T Heiser, ER Weber
Applied Physics Letters 72 (12), 1460-1462, 1998
74 1998 Interstitial copper-related center in -type silicon AA Istratov, H Hieslmair, C Flink, T Heiser, ER Weber
Applied physics letters 71 (16), 2349-2351, 1997
70 1997 Influence of interstitial copper on diffusion length and lifetime of minority carriers in -type silicon AA Istratov, C Flink, H Hieslmair, T Heiser, ER Weber
Applied physics letters 71 (15), 2121-2123, 1997
66 1997 Gettering simulator: physical basis and algorithm H Hieslmair, S Balasubramanian, AA Istratov, ER Weber
Semiconductor science and technology 16 (7), 567, 2001
64 2001 Transient ion drift detection of low level copper contamination in silicon T Heiser, S McHugo, H Hieslmair, ER Weber
Applied physics letters 70 (26), 3576-3578, 1997
62 1997 Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates H Hieslmair, S Chiruvolu, H Du
US Patent 7,892,872, 2011
60 2011 The dissociation energy and the charge state of a copper-pair center in silicon AA Istratov, H Hieslmair, T Heiser, C Flink, ER Weber
Applied physics letters 72 (4), 474-476, 1998
56 1998 High throughput ion-implantation for silicon solar cells H Hieslmair, L Mandrell, I Latchford, M Chun, J Sullivan, B Adibi
Energy Procedia 27, 122-128, 2012
53 2012 Defect recognition and impurity detection techniques in crystalline silicon for solar cells AA Istratov, H Hieslmair, OF Vyvenko, ER Weber, R Schindler
Solar energy materials and solar cells 72 (1-4), 441-451, 2002
52 2002