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Nihaar Mahatme
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Comparison of combinational and sequential error rates for a deep submicron process
NN Mahatme, S Jagannathan, TD Loveless, LW Massengill, BL Bhuva, ...
IEEE Transactions on Nuclear Science 58 (6), 2719-2725, 2011
1662011
Impact of technology scaling on SRAM soft error rates
I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RA Reed, ...
IEEE Transactions on Nuclear Science 61 (6), 3512-3518, 2014
832014
The contribution of low-energy protons to the total on-orbit SEU rate
NA Dodds, MJ Martinez, PE Dodd, MR Shaneyfelt, FW Sexton, JD Black, ...
IEEE Transactions on Nuclear Science 62 (6), 2440-2451, 2015
662015
Impact of technology scaling on the combinational logic soft error rate
NN Mahatme, NJ Gaspard, T Assis, S Jagannathan, I Chatterjee, ...
2014 IEEE international reliability physics symposium, 5F. 2.1-5F. 2.6, 2014
622014
Geometry dependence of total-dose effects in bulk FinFETs
I Chatterjee, EX Zhang, BL Bhuva, RA Reed, ML Alles, NN Mahatme, ...
IEEE Transactions on Nuclear Science 61 (6), 2951-2958, 2014
612014
Frequency dependence of alpha-particle induced soft error rates of flip-flops in 40-nm CMOS technology
S Jagannathan, TD Loveless, BL Bhuva, NJ Gaspard, N Mahatme, ...
IEEE Transactions on Nuclear Science 59 (6), 2796-2802, 2012
562012
Impact of supply voltage and frequency on the soft error rate of logic circuits
NN Mahatme, NJ Gaspard, S Jagannathan, TD Loveless, BL Bhuva, ...
IEEE Transactions on Nuclear Science 60 (6), 4200-4206, 2013
522013
Single-event charge collection and upset in 40-nm dual-and triple-well bulk CMOS SRAMs
I Chatterjee, B Narasimham, NN Mahatme, BL Bhuva, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 58 (6), 2761-2767, 2011
502011
Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies
NN Mahatme, I Chatterjee, BL Bhuva, J Ahlbin, LW Massengill, R Shuler
2010 IEEE International Reliability Physics Symposium, 1031-1035, 2010
462010
An SEU-tolerant DICE latch design with feedback transistors
HB Wang, YQ Li, L Chen, LX Li, R Liu, S Baeg, N Mahatme, BL Bhuva, ...
IEEE Transactions on Nuclear Science 62 (2), 548-554, 2015
432015
Reliability-aware synthesis of combinational logic with minimal performance penalty
DB Limbrick, NN Mahatme, WH Robinson, BL Bhuva
IEEE Transactions on nuclear science 60 (4), 2776-2781, 2013
392013
Temperature dependence of soft error rate in flip-flop designs
S Jagannathan, Z Diggins, N Mahatme, TD Loveless, BL Bhuva, SJ Wen, ...
2012 IEEE International Reliability Physics Symposium (IRPS), SE. 2.1-SE. 2.6, 2012
312012
Effects of threshold voltage variations on single-event upset response of sequential circuits at advanced technology nodes
H Zhang, H Jiang, TR Assis, NN Mahatme, B Narasimham, LW Massengill, ...
IEEE Transactions on Nuclear Science 64 (1), 457-463, 2016
302016
Analysis of multiple cell upsets due to neutrons in SRAMs for a deep-N-well process
N Mahatme, B Bhuva, YP Fang, A Oates
2011 International Reliability Physics Symposium, SE. 7.1-SE. 7.6, 2011
302011
Impact of strained-Si PMOS transistors on SRAM soft error rates
NN Mahatme, BL Bhuva, YP Fang, AS Oates
IEEE Transactions on Nuclear Science 59 (4), 845-850, 2012
272012
Sensitivity of high-frequency RF circuits to total ionizing dose degradation
S Jagannathan, TD Loveless, EX Zhang, DM Fleetwood, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 60 (6), 4498-4504, 2013
242013
Single-event upset characterization across temperature and supply voltage for a 20-nm bulk planar CMOS technology
JS Kauppila, WH Kay, TD Haeffner, DL Rauch, TR Assis, NN Mahatme, ...
IEEE Transactions on Nuclear Science 62 (6), 2613-2619, 2015
232015
Effects of total-ionizing-dose irradiation on SEU-and SET-induced soft errors in bulk 40-nm sequential circuits
RM Chen, ZJ Diggins, NN Mahatme, L Wang, EX Zhang, YP Chen, YN Liu, ...
IEEE Transactions on Nuclear Science 64 (1), 471-476, 2016
222016
Single-event transient sensitivity evaluation of clock networks at 28-nm CMOS technology
HB Wang, N Mahatme, L Chen, M Newton, YQ Li, R Liu, M Chen, ...
IEEE Transactions on Nuclear Science 63 (1), 385-391, 2016
212016
Impact of back-gate bias and device geometry on the total ionizing dose response of 1-transistor floating body RAMs
NN Mahatme, EX Zhang, RA Reed, BL Bhuva, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 59 (6), 2966-2973, 2012
202012
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