| Carrier-transport-enhanced channel CMOS for improved power consumption and performance S Takagi, T Iisawa, T Tezuka, T Numata, S Nakaharai, N Hirashita, ... IEEE transactions on electron devices 55 (1), 21-39, 2007 | 433 | 2007 |
| Evidence of low interface trap density in GeO2∕ Ge metal-oxide-semiconductor structures fabricated by thermal oxidation H Matsubara, T Sasada, M Takenaka, S Takagi Applied physics letters 93 (3), 2008 | 409 | 2008 |
| High-Mobility Ge pMOSFET With 1-nm EOT Gate Stack Fabricated by Plasma Post Oxidation R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi IEEE Transactions on Electron Devices 59 (2), 335-341, 2011 | 283* | 2011 |
| High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using Gate Stacks Fabricated by Plasma Postoxidation R Zhang, PC Huang, JC Lin, N Taoka, M Takenaka, S Takagi IEEE Transactions on Electron Devices 60 (3), 927-934, 2013 | 229 | 2013 |
| Efficient low-loss InGaAsP/Si hybrid MOS optical modulator JH Han, F Boeuf, J Fujikata, S Takahashi, S Takagi, M Takenaka Nature Photonics 11 (8), 486-490, 2017 | 216 | 2017 |
| Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation R Zhang, T Iwasaki, N Taoka, M Takenaka, S Takagi Applied Physics Letters 98 (11), 2011 | 209 | 2011 |
| 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ... Applied Physics Letters 100 (13), 2012 | 190 | 2012 |
| All-optical flip-flop multimode interference bistable laser diode M Takenaka, M Raburn, Y Nakano IEEE Photonics Technology Letters 17 (5), 968-970, 2005 | 164* | 2005 |
| Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation T Sasada, Y Nakakita, M Takenaka, S Takagi Journal of Applied Physics 106 (7), 2009 | 143 | 2009 |
| Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits J Kang, M Takenaka, S Takagi Optics express 24 (11), 11855-11864, 2016 | 111 | 2016 |
| Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping M Takenaka, K Morii, M Sugiyama, Y Nakano, S Takagi Optics Express 20 (8), 8718-8725, 2012 | 108 | 2012 |
| III–V/Ge channel MOS device technologies in nano CMOS era S Takagi, R Zhang, J Suh, SH Kim, M Yokoyama, K Nishi, M Takenaka Japanese Journal of Applied Physics 54 (6S1), 06FA01, 2015 | 106 | 2015 |
| High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping K Morii, T Iwasaki, R Nakane, M Takenaka, S Takagi 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 100 | 2009 |
| Focusing subwavelength grating coupler for mid-infrared suspended membrane germanium waveguides J Kang, Z Cheng, W Zhou, TH Xiao, KL Gopalakrisna, M Takenaka, ... Optics Letters 42 (11), 2094-2097, 2017 | 97 | 2017 |
| 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation R Zhang, N Taoka, PC Huang, M Takenaka, S Takagi 2011 International Electron Devices Meeting, 28.3. 1-28.3. 4, 2011 | 96 | 2011 |
| High mobility CMOS technologies using III–V/Ge channels on Si platform S Takagi, SH Kim, M Yokoyama, R Zhang, N Taoka, Y Urabe, T Yasuda, ... Solid-state electronics 88, 2-8, 2013 | 94 | 2013 |
| Direct observation of interface charge behaviors in FeFET by quasi-static split CV and Hall techniques: Revealing FeFET operation K Toprasertpong, M Takenaka, S Takagi 2019 IEEE International Electron Devices Meeting (IEDM), 23.7. 1-23.7. 4, 2019 | 89 | 2019 |
| III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier … M Yokoyama, T Yasuda, H Takagi, N Miyata, Y Urabe, H Ishii, H Yamada, ... Applied Physics Letters 96 (14), 2010 | 84 | 2010 |
| High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs M Kim, Y Wakabayashi, R Nakane, M Yokoyama, M Takenaka, S Takagi 2014 IEEE international electron devices meeting, 13.2. 1-13.2. 4, 2014 | 82 | 2014 |
| Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing K Toprasertpong, K Tahara, T Fukui, Z Lin, K Watanabe, M Takenaka, ... IEEE Electron Device Letters 41 (10), 1588-1591, 2020 | 74 | 2020 |
Sanghyeon Kim, S. Kim, S.-H. Kim, S....KAIST, Korea Institute of Science and Technology (KIST), imec, The University of TokyoVerified email at kaist.ac.kr
