| Surface plasmon sensor based on the enhanced light transmission through arrays of nanoholes in gold films AG Brolo, R Gordon, B Leathem, KL Kavanagh Langmuir 20 (12), 4813-4815, 2004 | 963 | 2004 |
| A new generation of sensors based on extraordinary optical transmission R Gordon, D Sinton, KL Kavanagh, AG Brolo Accounts of chemical research 41 (8), 1049-1057, 2008 | 622 | 2008 |
| Strong polarization in the optical transmission through elliptical nanohole arrays R Gordon, AG Brolo, A McKinnon, A Rajora, B Leathem, KL Kavanagh Physical review letters 92 (3), 037401, 2004 | 586 | 2004 |
| Generation of misfit dislocations in semiconductors PMJ Marée, JC Barbour, JF Van der Veen, KL Kavanagh, ... Journal of applied physics 62 (11), 4413-4420, 1987 | 581 | 1987 |
| Nanohole-enhanced Raman scattering AG Brolo, E Arctander, R Gordon, B Leathem, KL Kavanagh Nano Letters 4 (10), 2015-2018, 2004 | 546 | 2004 |
| Luminescent colloidal silicon suspensions from porous silicon JL Heinrich, CL Curtis, GM Credo, MJ Sailor, KL Kavanagh Science 255 (5040), 66-68, 1992 | 343 | 1992 |
| Enhanced fluorescence from arrays of nanoholes in a gold film AG Brolo, SC Kwok, MG Moffitt, R Gordon, J Riordon, KL Kavanagh Journal of the American Chemical Society 127 (42), 14936-14941, 2005 | 259 | 2005 |
| Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ... Journal of applied physics 64 (10), 4843-4852, 1988 | 251 | 1988 |
| Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge ED Marshall, B Zhang, LC Wang, PF Jiao, WX Chen, T Sawada, SS Lau, ... Journal of applied physics 62 (3), 942-947, 1987 | 239 | 1987 |
| Resonant optical transmission through hole‐arrays in metal films: physics and applications R Gordon, AG Brolo, D Sinton, KL Kavanagh Laser & Photonics Reviews 4 (2), 311-335, 2010 | 213 | 2010 |
| Thin epitaxial Ge− Si (111) films: Study and control of morphology PMJ Maree, K Nakagawa, FM Mulders, JF Van der Veen, KL Kavanagh Surface science 191 (3), 305-328, 1987 | 206 | 1987 |
| Misfit dislocations in nanowire heterostructures KL Kavanagh Semiconductor Science and Technology 25 (2), 024006, 2010 | 201 | 2010 |
| Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells HP Xin, KL Kavanagh, ZQ Zhu, CW Tu Applied physics letters 74 (16), 2337-2339, 1999 | 160 | 1999 |
| Fermi-level pinning by misfit dislocations at GaAs interfaces JM Woodall, GD Pettit, TN Jackson, C Lanza, KL Kavanagh, JW Mayer Physical review letters 51 (19), 1783, 1983 | 155 | 1983 |
| Growth, branching, and kinking of molecular-beam epitaxial GaAs nanowires ZH Wu, X Mei, D Kim, M Blumin, HE Ruda, JQ Liu, KL Kavanagh Applied physics letters 83 (16), 3368-3370, 2003 | 144 | 2003 |
| Lattice compression from conduction electrons in heavily doped Si: As GS Cargill III, J Angilello III, KL Kavanagh Physical review letters 61 (15), 1748, 1988 | 141 | 1988 |
| Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures JCP Chang, J Chen, JM Fernandez, HH Wieder, KL Kavanagh Applied physics letters 60 (9), 1129-1131, 1992 | 138 | 1992 |
| Effects of GaAs substrate misorientation on strain relaxation in films and multilayers RS Goldman, KL Kavanagh, HH Wieder, SN Ehrlich, RM Feenstra Journal of applied physics 83 (10), 5137-5149, 1998 | 127 | 1998 |
| Apex-enhanced Raman spectroscopy using double-hole arrays in a gold film A Lesuffleur, LKS Kumar, AG Brolo, KL Kavanagh, R Gordon The Journal of Physical Chemistry C 111 (6), 2347-2350, 2007 | 122 | 2007 |
| Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ... Nano letters 8 (11), 3755-3760, 2008 | 119 | 2008 |
