Karen L Kavanagh
Karen L Kavanagh
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Surface plasmon sensor based on the enhanced light transmission through arrays of nanoholes in gold films
AG Brolo, R Gordon, B Leathem, KL Kavanagh
Langmuir 20 (12), 4813-4815, 2004
A new generation of sensors based on extraordinary optical transmission
R Gordon, D Sinton, KL Kavanagh, AG Brolo
Accounts of chemical research 41 (8), 1049-1057, 2008
Strong polarization in the optical transmission through elliptical nanohole arrays
R Gordon, AG Brolo, A McKinnon, A Rajora, B Leathem, KL Kavanagh
Physical review letters 92 (3), 037401, 2004
Generation of misfit dislocations in semiconductors
PMJ Marée, JC Barbour, JF Van der Veen, KL Kavanagh, ...
Journal of applied physics 62 (11), 4413-4420, 1987
Nanohole-enhanced Raman scattering
AG Brolo, E Arctander, R Gordon, B Leathem, KL Kavanagh
Nano Letters 4 (10), 2015-2018, 2004
Luminescent colloidal silicon suspensions from porous silicon
JL Heinrich, CL Curtis, GM Credo, MJ Sailor, KL Kavanagh
Science 255 (5040), 66-68, 1992
Enhanced fluorescence from arrays of nanoholes in a gold film
AG Brolo, SC Kwok, MG Moffitt, R Gordon, J Riordon, KL Kavanagh
Journal of the American Chemical Society 127 (42), 14936-14941, 2005
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ...
Journal of applied physics 64 (10), 4843-4852, 1988
Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge
ED Marshall, B Zhang, LC Wang, PF Jiao, WX Chen, T Sawada, SS Lau, ...
Journal of applied physics 62 (3), 942-947, 1987
Resonant optical transmission through hole‐arrays in metal films: physics and applications
R Gordon, AG Brolo, D Sinton, KL Kavanagh
Laser & Photonics Reviews 4 (2), 311-335, 2010
Thin epitaxial Ge− Si (111) films: Study and control of morphology
PMJ Maree, K Nakagawa, FM Mulders, JF Van der Veen, KL Kavanagh
Surface science 191 (3), 305-328, 1987
Misfit dislocations in nanowire heterostructures
KL Kavanagh
Semiconductor Science and Technology 25 (2), 024006, 2010
Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
HP Xin, KL Kavanagh, ZQ Zhu, CW Tu
Applied physics letters 74 (16), 2337-2339, 1999
Fermi-level pinning by misfit dislocations at GaAs interfaces
JM Woodall, GD Pettit, TN Jackson, C Lanza, KL Kavanagh, JW Mayer
Physical review letters 51 (19), 1783, 1983
Growth, branching, and kinking of molecular-beam epitaxial GaAs nanowires
ZH Wu, X Mei, D Kim, M Blumin, HE Ruda, JQ Liu, KL Kavanagh
Applied physics letters 83 (16), 3368-3370, 2003
Lattice compression from conduction electrons in heavily doped Si: As
GS Cargill III, J Angilello III, KL Kavanagh
Physical review letters 61 (15), 1748, 1988
Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation‐doped In0.3Ga0.7As/In0.29Al0.71As heterostructures
JCP Chang, J Chen, JM Fernandez, HH Wieder, KL Kavanagh
Applied physics letters 60 (9), 1129-1131, 1992
Effects of GaAs substrate misorientation on strain relaxation in films and multilayers
RS Goldman, KL Kavanagh, HH Wieder, SN Ehrlich, RM Feenstra
Journal of applied physics 83 (10), 5137-5149, 1998
Apex-enhanced Raman spectroscopy using double-hole arrays in a gold film
A Lesuffleur, LKS Kumar, AG Brolo, KL Kavanagh, R Gordon
The Journal of Physical Chemistry C 111 (6), 2347-2350, 2007
Heteroepitaxial growth of vertical GaAs nanowires on Si (111) substrates by metal− organic chemical vapor deposition
XY Bao, C Soci, D Susac, J Bratvold, DPR Aplin, W Wei, CY Chen, ...
Nano letters 8 (11), 3755-3760, 2008
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