Pieter Weckx
Pieter Weckx
Senior researcher, imec
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα imec.be
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Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
862018
Defect-based methodology for workload-dependent circuit lifetime projections-Application to SRAM
P Weckx, B Kaczer, M Toledano-Luque, T Grasser, PJ Roussel, H Kukner, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 3A. 4.1-3A. 4.7, 2013
652013
Comparison of reaction-diffusion and atomistic trap-based BTI models for logic gates
H Kükner, S Khan, P Weckx, P Raghavan, S Hamdioui, B Kaczer, ...
IEEE transactions on device and materials reliability 14 (1), 182-193, 2013
622013
Degradation of time dependent variability due to interface state generation
M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, M Bina, T Grasser, ...
2013 Symposium on VLSI Technology, T190-T191, 2013
592013
Implications of BTI-induced time-dependent statistics on yield estimation of digital circuits
P Weckx, B Kaczer, M Toledano-Luque, P Raghavan, J Franco, ...
IEEE Transactions on Electron Devices 61 (3), 666-673, 2014
482014
Power aware FinFET and lateral nanosheet FET targeting for 3nm CMOS technology
D Yakimets, MG Bardon, D Jang, P Schuddinck, Y Sherazi, P Weckx, ...
2017 IEEE International Electron Devices Meeting (IEDM), 20.4. 1-20.4. 4, 2017
432017
Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology
P Weckx, B Kaczer, C Chen, J Franco, E Bury, K Chanda, J Watt, ...
2015 IEEE International Reliability Physics Symposium, 3B. 1.1-3B. 1.6, 2015
412015
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
B Kaczer, J Franco, P Weckx, PJ Roussel, V Putcha, E Bury, M Simicic, ...
Microelectronics Reliability 81, 186-194, 2018
382018
Origins and implications of increased channel hot carrier variability in nFinFETs
B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ...
2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015
342015
Integral impact of BTI, PVT variation, and workload on SRAM sense amplifier
I Agbo, M Taouil, D Kraak, S Hamdioui, H Kükner, P Weckx, P Raghavan, ...
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 25 (4 …, 2017
312017
The impact of sequential-3D integration on semiconductor scaling roadmap
A Mallik, A Vandooren, L Witters, A Walke, J Franco, Y Sherazi, P Weckx, ...
2017 IEEE International Electron Devices Meeting (IEDM), 32.1. 1-31.1. 4, 2017
302017
Atomistic pseudo-transient BTI simulation with inherent workload memory
D Rodopoulos, P Weckx, M Noltsis, F Catthoor, D Soudris
IEEE Transactions on Device and Materials Reliability 14 (2), 704-714, 2014
292014
Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology
H Kükner, M Khatib, S Morrison, P Weckx, P Raghavan, B Kaczer, ...
Fifteenth International Symposium on Quality Electronic Design, 473-479, 2014
282014
Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories
M Toledano-Luque, R Degraeve, B Kaczer, B Tang, PJ Roussel, P Weckx, ...
2012 International Electron Devices Meeting, 9.2. 1-9.2. 4, 2012
282012
The Complementary FET (CFET) for CMOS scaling beyond N3
J Ryckaert, P Schuddinck, P Weckx, G Bouche, B Vincent, J Smith, ...
2018 IEEE Symposium on VLSI Technology, 141-142, 2018
242018
Maximizing reliable performance of advanced CMOS circuits—A case study
B Kaczer, C Chen, P Weckx, PJ Roussel, M Toledano-Luque, J Franco, ...
2014 IEEE International Reliability Physics Symposium, 2D. 4.1-2D. 4.6, 2014
242014
Quantification of sense amplifier offset voltage degradation due to zero-and run-time variability
I Agbo, M Taouil, S Hamdioui, P Weckx, S Cosemans, P Raghavan, ...
2016 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 725-730, 2016
232016
Non-Monte-Carlo methodology for high-sigma simulations of circuits under workload-dependent BTI degradation—application to 6T SRAM
P Weckx, B Kaczer, H Kukner, J Roussel, P Raghavan, F Catthoor, ...
2014 IEEE International Reliability Physics Symposium, 5D. 2.1-5D. 2.6, 2014
232014
Scaling of BTI reliability in presence of time-zero variability
H Kükner, P Weckx, J Franco, M Toledano-Luque, M Cho, B Kaczer, ...
2014 IEEE International Reliability Physics Symposium, CA. 5.1-CA. 5.7, 2014
222014
The defect-centric perspective of device and circuit reliability—From individual defects to circuits
B Kaczer, J Franco, P Weckx, PJ Roussel, E Bury, M Cho, R Degraeve, ...
2015 45th European Solid State Device Research Conference (ESSDERC), 218-225, 2015
172015
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