| Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures D Pierucci, H Henck, J Avila, A Balan, CH Naylor, G Patriarche, YJ Dappe, ... Nano letters 16 (7), 4054-4061, 2016 | 332 | 2016 |
| van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier, G Patriarche, ... ACS nano 10 (10), 9679-9686, 2016 | 173 | 2016 |
| Persistence of Magnetism in Atomically Thin MnPS3 Crystals G Long, H Henck, M Gibertini, D Dumcenco, Z Wang, T Taniguchi, ... Nano letters 20 (4), 2452-2459, 2020 | 146 | 2020 |
| Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures ZB Aziza, D Pierucci, H Henck, MG Silly, C David, M Yoon, F Sirotti, ... Physical Review B 96 (3), 035407, 2017 | 127 | 2017 |
| Tunable doping in hydrogenated single layered molybdenum disulfide D Pierucci, H Henck, Z Ben Aziza, CH Naylor, A Balan, JE Rault, MG Silly, ... ACS nano 11 (2), 1755-1761, 2017 | 103 | 2017 |
| Large area molybdenum disulphide-epitaxial graphene vertical Van der Waals heterostructures D Pierucci, H Henck, CH Naylor, H Sediri, E Lhuillier, A Balan, JE Rault, ... Scientific reports 6 (1), 26656, 2016 | 96 | 2016 |
| Direct observation of the band structure in bulk hexagonal boron nitride H Henck, D Pierucci, G Fugallo, J Avila, G Cassabois, YJ Dappe, MG Silly, ... Physical Review B 95 (8), 085410, 2017 | 86 | 2017 |
| Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics J Chaste, A Missaoui, S Huang, H Henck, Z Ben Aziza, L Ferlazzo, ... ACS nano 12 (4), 3235-3242, 2018 | 84 | 2018 |
| Electronic band structure of Two-Dimensional /Graphene van der Waals Heterostructures H Henck, ZB Aziza, D Pierucci, F Laourine, F Reale, P Palczynski, ... Physical Review B 97 (15), 155421, 2018 | 80 | 2018 |
| Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure H Sediri, D Pierucci, M Hajlaoui, H Henck, G Patriarche, YJ Dappe, ... Scientific reports 5 (1), 16465, 2015 | 79 | 2015 |
| Flat electronic bands in long sequences of rhombohedral-stacked graphene H Henck, J Avila, ZB Aziza, D Pierucci, J Baima, B Pamuk, J Chaste, D Utt, ... Physical Review B 97 (24), 245421, 2018 | 64 | 2018 |
| Interface dipole and band bending in the hybrid heterojunction H Henck, ZB Aziza, O Zill, D Pierucci, CH Naylor, MG Silly, N Gogneau, ... Physical Review B 96 (11), 115312, 2017 | 62 | 2017 |
| Valence band inversion and spin-orbit effects in the electronic structure of monolayer GaSe ZB Aziza, V Zólyomi, H Henck, D Pierucci, MG Silly, J Avila, SJ Magorrian, ... Physical Review B 98 (11), 115405, 2018 | 60 | 2018 |
| Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure D Pierucci, J Zribi, H Henck, J Chaste, MG Silly, F Bertran, P Le Fevre, ... Applied Physics Letters 112 (25), 2018 | 57 | 2018 |
| Electrolytic phototransistor based on graphene-MoS2 van der Waals pn heterojunction with tunable photoresponse H Henck, D Pierucci, J Chaste, CH Naylor, J Avila, A Balan, MG Silly, ... Applied Physics Letters 109 (11), 2016 | 53 | 2016 |
| Coexistence of Dirac and massive carriers in -(BEDT-TTF)I under hydrostatic pressure M Monteverde, MO Goerbig, P Auban-Senzier, F Navarin, H Henck, ... Physical Review B 87 (24), 245110, 2013 | 42 | 2013 |
| Bandgap inhomogeneity of MoS2 monolayer on epitaxial graphene bilayer in van der Waals pn junction ZB Aziza, H Henck, D Di Felice, D Pierucci, J Chaste, CH Naylor, A Balan, ... Carbon 110, 396-403, 2016 | 35 | 2016 |
| High electron mobility in epitaxial trilayer graphene on off-axis SiC (0001) M Hajlaoui, H Sediri, D Pierucci, H Henck, T Phuphachong, MG Silly, ... Scientific reports 6 (1), 18791, 2016 | 34 | 2016 |
| Stacking fault and defects in single domain multilayered hexagonal boron nitride H Henck, D Pierucci, Z Ben Aziza, MG Silly, B Gil, F Sirotti, G Cassabois, ... Applied Physics Letters 110 (2), 2017 | 25 | 2017 |
| Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals H Henck, D Pierucci, J Zribi, F Bisti, E Papalazarou, JC Girard, J Chaste, ... Physical Review Materials 3 (3), 034004, 2019 | 24 | 2019 |
debora pierucciINSP CNRS - Sorbonne universitéVerified email at insp.upmc.fr
