Michael Spencer
Michael Spencer
Cornell University OR Howard Universtiy OR Morgan State University
Verified email at ece.cornell.edu
Title
Cited by
Cited by
Year
Progress, challenges, and opportunities in two-dimensional materials beyond graphene
SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ...
ACS nano 7 (4), 2898-2926, 2013
32192013
Measurement of ultrafast carrier dynamics in epitaxial graphene
JM Dawlaty, S Shivaraman, M Chandrashekhar, F Rana, MG Spencer
Applied Physics Letters 92 (4), 042116, 2008
7452008
Oriented 2D covalent organic framework thin films on single-layer graphene
JW Colson, AR Woll, A Mukherjee, MP Levendorf, EL Spitler, VB Shields, ...
Science 332 (6026), 228-231, 2011
6762011
Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene
PA George, J Strait, J Dawlaty, S Shivaraman, M Chandrashekhar, ...
Nano letters 8 (12), 4248-4251, 2008
6052008
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices
RD Vispute, V Talyansky, S Choopun, RP Sharma, T Venkatesan, M He, ...
Applied Physics Letters 73 (3), 348-350, 1998
5781998
Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible
JM Dawlaty, S Shivaraman, J Strait, P George, M Chandrashekhar, ...
Applied Physics Letters 93 (13), 131905, 2008
4842008
Ultrafast relaxation dynamics of hot optical phonons in graphene
H Wang, JH Strait, PA George, S Shivaraman, VB Shields, ...
Applied Physics Letters 96 (8), 081917, 2010
2692010
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/passivation and UV illumination
G Koley, V Tilak, LF Eastman, MG Spencer
IEEE Transactions on Electron Devices 50 (4), 886-893, 2003
2662003
Free-standing epitaxial graphene
S Shivaraman, RA Barton, X Yu, J Alden, L Herman, ...
Nano letters 9 (9), 3100-3105, 2009
2302009
Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene
F Rana, PA George, JH Strait, J Dawlaty, S Shivaraman, ...
Physical Review B 79 (11), 115447, 2009
2222009
van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst
J Hwang, M Kim, D Campbell, HA Alsalman, JY Kwak, S Shivaraman, ...
Acs Nano 7 (1), 385-395, 2013
1882013
Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy
JH Strait, H Wang, S Shivaraman, V Shields, M Spencer, F Rana
Nano letters 11 (11), 4902-4906, 2011
1742011
Demonstration of a 4H SiC betavoltaic cell
MVS Chandrashekhar, CI Thomas, H Li, MG Spencer, A Lal
Applied Physics Letters 88 (3), 033506, 2006
1712006
Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy
G Koley, MG Spencer
Journal of Applied Physics 90 (1), 337-344, 2001
1592001
Modification of indium tin oxide for improved hole injection in organic light emitting diodes
Y Shen, DB Jacobs, GG Malliaras, G Koley, MG Spencer, A Ioannidis
Advanced Materials 13 (16), 1234-1238, 2001
1552001
Temperature dependence of wavelength selectable zero-phonon emission from single defects in hexagonal boron nitride
NR Jungwirth, B Calderon, Y Ji, MG Spencer, ME Flatté, GD Fuchs
Nano letters 16 (10), 6052-6057, 2016
1542016
Thickness estimation of epitaxial graphene on SiC using attenuation of substrate Raman intensity
S Shivaraman, MVS Chandrashekhar, JJ Boeckl, MG Spencer
Journal of electronic materials 38 (6), 725-730, 2009
1462009
Highly sensitive and selective detection of NO2 using epitaxial graphene on 6H-SiC
MWK Nomani, R Shishir, M Qazi, D Diwan, VB Shields, MG Spencer, ...
Sensors and Actuators B: Chemical 150 (1), 301-307, 2010
1422010
Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts
JY Kwak, J Hwang, B Calderon, H Alsalman, N Munoz, B Schutter, ...
Nano letters 14 (8), 4511-4516, 2014
1382014
Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor
Y Makarov, M Spencer
US Patent 8,329,252, 2012
1362012
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