Hassan Maher
Hassan Maher
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AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz
S Bouzid-Driad, H Maher, N Defrance, V Hoel, JC De Jaeger, M Renvoise, ...
IEEE Electron Device Letters 34 (1), 36-38, 2012
Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications
A Letellier, MR Dubois, JPF Trovao, H Maher
IEEE Transactions on Power Electronics 34 (1), 612-623, 2018
Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors
H Maher, DW DiSanto, G Soerensen, CR Bolognesi, H Tang, JB Webb
Applied Physics Letters 77 (23), 3833-3835, 2000
Gallium nitride semiconductors in power electronics for electric vehicles: Advantages and challenges
A Letellier, MR Dubois, JP Trovao, H Maher
2015 IEEE vehicle power and propulsion conference (VPPC), 1-6, 2015
Optimized pre-treatment process for MOS-GaN devices passivation
A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad
IEEE Electron Device Letters 35 (3), 318-320, 2014
Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer
A Chakroun, A Jaouad, M Bouchilaoun, O Arenas, A Soltani, H Maher
physica status solidi (a) 214 (8), 1600836, 2017
Electrothermal mapping of AlGaN/GaN HEMTs using microresistance thermometer detectors
O Arenas, É Al Alam, V Aimez, A Jaouad, H Maher, R Ares, F Boone
IEEE Electron Device Letters 36 (2), 111-113, 2014
A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications
H Maher, J Décobert, A Falcou, M Le Pallec, G Post, YI Nissim, ...
IEEE Transactions on Electron Devices 46 (1), 32-37, 1999
AlGaN/GaN MOS-HEMT device fabricated using a high quality PECVD passivation process
A Chakroun, A Jaouad, A Soltani, O Arenas, V Aimez, R Arès, H Maher
IEEE Electron Device Letters 38 (6), 779-782, 2017
Characterization of dynamic self-heating in GaN HEMTs using gate resistance measurement
A Cutivet, F Cozette, M Bouchilaoun, A Chakroun, O Arenas, M Lesecq, ...
IEEE Electron Device Letters 38 (2), 240-243, 2016
Integration of micro resistance thermometer detectors in AlGaN/GaN devices
O Arenas, É Al Alam, A Thevenot, Y Cordier, A Jaouad, V Aimez, H Maher, ...
IEEE Journal of the Electron Devices Society 2 (6), 145-148, 2014
Design method of PCB inductors for high-frequency GaN converters
A Chafi, N Idir, A Videt, H Maher
IEEE Transactions on Power Electronics 36 (1), 805-814, 2020
Room-temperature AlGaN/GaN terahertz plasmonic detectors with a zero-bias grating
H Spisser, AS Grimault-Jacquin, N Zerounian, A Aassime, L Cao, F Boone, ...
Journal of Infrared, Millimeter, and Terahertz Waves 37, 243-257, 2016
Characterization of m-GaN and a-GaN crystallographic planes after being chemically etched in TMAH solution
N Al Taradeh, E Frayssinet, C Rodriguez, F Morancho, C Sonneville, ...
Energies 14 (14), 4241, 2021
High transconductance AlGaN/GaN HEMT with thin barrier on Si (111) substrate
F Lecourt, Y Douvry, N Defrance, V Hoel, JC De Jaeger, S Bouzid, ...
2010 Proceedings of the European Solid State Device Research Conference, 281-284, 2010
Enhancement-depletion semiconductor structure and method for making it
H Maher, P Baudet
US Patent App. 11/722,208, 2009
A 200-GHz true E-mode low-noise MHEMT
H Maher, I El Makoudi, P Frijlink, D Smith, M Rocchi, S Bollaert, S Lepilliet, ...
IEEE transactions on electron devices 54 (7), 1626-1632, 2007
Inductively coupled plasma—plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)
M Medjdoub, JL Courant, H Maher, G Post
Materials Science and Engineering: B 80 (1-3), 252-256, 2001
Active gate driver and management of the switching speed of GaN transistors during turn-on and turn-off
ML Beye, T Wickramasinghe, JF Mogniotte, LV Phung, N Idir, H Maher, ...
Electronics 10 (2), 106, 2021
Scalable modeling of transient self-heating of GaN high-electron-mobility transistors based on experimental measurements
A Cutivet, G Pavlidis, B Hassan, M Bouchilaoun, C Rodriguez, A Soltani, ...
IEEE Transactions on Electron Devices 66 (5), 2139-2145, 2019
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