Follow
Dionisis Sakellaropoulos
Dionisis Sakellaropoulos
Verified email at central.ntua.gr
Title
Cited by
Cited by
Year
Engineering amorphous-crystalline interfaces in TiO2− x/TiO2− y-based bilayer structures for enhanced resistive switching and synaptic properties
P Bousoulas, P Asenov, I Karageorgiou, D Sakellaropoulos, ...
Journal of Applied Physics 120 (15), 2016
472016
Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors
P Bousoulas, D Sakellaropoulos, C Papakonstantinopoulos, S Kitsios, ...
Nanotechnology 31 (45), 454002, 2020
362020
Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
D Sakellaropoulos, P Bousoulas, G Nikas, C Arvanitis, E Bagakis, ...
Microelectronic Engineering 229, 111358, 2020
282020
Impact of Pt embedded nanocrystals on the resistive switching and synaptic properties of forming free TiO2–x/TiO2–y-based bilayer structures
D Sakellaropoulos, P Bousoulas, D Tsoukalas
Journal of Applied Physics 126 (4), 2019
262019
Tuning the analog synaptic properties of forming free SiO2 memristors by material engineering
P Bousoulas, D Sakellaropoulos, D Tsoukalas
Applied Physics Letters 118 (14), 2021
212021
Impact of Active Electrode on the Synaptic Properties of SiO2-Based Forming-Free Conductive Bridge Memory
D Sakellaropoulos, P Bousoulas, C Papakonstantinopoulos, S Kitsios, ...
IEEE Transactions on Electron Devices 68 (4), 1598-1603, 2021
182021
Spatial Confinement Effects of Embedded Nanocrystals on Multibit and Synaptic Properties of Forming Free SiO2-Based Conductive Bridge Random Access Memory
D Sakellaropoulos, P Bousoulas, C Papakonstantinopoulos, S Kitsios, ...
IEEE Electron Device Letters 41 (7), 1013-1016, 2020
182020
Highly Flexible Artificial Synapses from SiO2-Based Conductive Bridge Memristors and Pt Nanoparticles through a Crack Suppression Technique
C Papakonstantinopoulos, P Bousoulas, M Tsigkourakos, ...
ACS Applied Electronic Materials 3 (6), 2729-2737, 2021
92021
Improving the resistive switching uniformity of forming-free TiO2−x based devices by embedded Pt nanocrystals
P Bousoulas, D Sakellaropoulos, J Giannopoulos, D Tsoukalas
2015 45th European Solid State Device Research Conference (ESSDERC), 274-277, 2015
72015
The system can't perform the operation now. Try again later.
Articles 1–9