Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
569 2019 Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ...
Advanced Materials 33 (21), 2008709, 2021
80 2021 Committee machines—a universal method to deal with non-idealities in memristor-based neural networks D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ...
Nature communications 11 (1), 4273, 2020
72 2020 The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ...
Applied Physics Letters 110 (10), 2017
68 2017 Two-Pulse – : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ...
IEEE Electron Device Letters 29 (9), 1043-1046, 2008
64 2008 Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
56 2013 A single pulse charge pumping technique for fast measurements of interface states L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE Transactions on Electron Devices 58 (5), 1490-1498, 2011
52 2011 Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ...
IEEE Electron Device Letters 39 (11), 1652-1655, 2018
48 2018 Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ...
IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017
46 2017 Two types of neutral electron traps generated in the gate silicon dioxide WD Zhang, JF Zhang, A Lalor, D Burton, GV Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 49 (11), 1868-1875, 2002
45 2002 Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides MH Chang, JF Zhang, WD Zhang
IEEE transactions on electron devices 53 (6), 1347-1354, 2006
44 2006 A low-power and high-speed True Random Number Generator using generated RTN J Brown, R Gao, Z Ji, J Chen, J Wu, J Zhang, B Zhou, Q Shi, J Crowford, ...
2018 IEEE Symposium on VLSI Technology, 95-96, 2018
42 2018 New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation M Duan, JF Zhang, Z Ji, WD Zhang, B Kaczer, T Schram, R Ritzenthaler, ...
IEEE transactions on electron devices 60 (8), 2505-2511, 2013
39 2013 Energy and Spatial Distributions of Electron Traps Throughout Stacks as the IPD in Flash Memory Application XF Zheng, WD Zhang, B Govoreanu, DR Aguado, JF Zhang, J Van Houdt
IEEE Transactions on Electron Devices 57 (1), 288-296, 2009
39 2009 Negative bias temperature instability lifetime prediction: Problems and solutions Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ...
2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013
36 2013 Defect loss: A new concept for reliability of MOSFETs M Duan, JF Zhang, Z Ji, W Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE electron device letters 33 (4), 480-482, 2012
35 2012 Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging M Duan, JF Zhang, Z Ji, WD Zhang, D Vigar, A Asenov, L Gerrer, ...
IEEE Transactions on Electron Devices 63 (9), 3642-3648, 2016
33 2016 On the interface states generated under different stress conditions WD Zhang, JF Zhang, MJ Uren, G Groeseneken, R Degraeve, M Lalor, ...
Applied Physics Letters 79 (19), 3092-3094, 2001
31 2001 Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks ME Pereira, J Deuermeier, P Freitas, P Barquinha, W Zhang, R Martins, ...
APL Materials 10 (1), 2022
30 2022 Endurance improvement of more than five orders in Gex Se1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ...
2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019
30 2019