| Leakage current analysis of diamond Schottky barrier diode H Umezawa, T Saito, N Tokuda, M Ogura, SG Ri, H Yoshikawa, S Shikata Applied Physics Letters 90 (7), 2007 | 148 | 2007 |
| High speed through silicon via filling by copper electrodeposition K Kondo, Y Suzuki, T Saito, N Okamoto, M Takauchi Electrochemical and Solid-State Letters 13 (5), D26, 2010 | 75 | 2010 |
| Halogenation and butylation of diamond surfaces by reactions in organic solvents Y Ikeda, T Saito, K Kusakabe, S Morooka, H Maeda, Y Taniguchi, ... Diamond and related materials 7 (6), 830-834, 1998 | 72 | 1998 |
| Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition T Saito, S Tsuruga, N Ohya, K Kusakabe, S Morooka, H Maeda, ... Diamond and related materials 7 (9), 1381-1384, 1998 | 47 | 1998 |
| Clinical trials of vitamin B6 and proline supplementation for gyrate atrophy of the choroid and retina. S Hayasaka, T Saito, H Nakajima, O Takahashi, K Mizuno, K Tada British journal of ophthalmology 69 (4), 283-290, 1985 | 45 | 1985 |
| Surface roughening of diamond (001) films during homoepitaxial growth in heavy boron doping N Tokuda, H Umezawa, T Saito, K Yamabe, H Okushi, S Yamasaki Diamond and related materials 16 (4-7), 767-770, 2007 | 43 | 2007 |
| Single diallylamine-type copolymer additive which perfectly bottom-up fills Cu electrodeposition M Takeuchi, K Kondo, H Kuri, M Bunya, N Okamoto, T Saito Journal of The Electrochemical Society 159 (4), D230, 2012 | 42 | 2012 |
| Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si K Shibahara, T Saito, S Nishino, H Matsunami IEEE electron device letters 7 (12), 692-693, 1986 | 42 | 1986 |
| Early Transition Metal Clusters with π-Donor Ligands T Saito by MH Chisholm, VCH, New York, 1995 | 38 | 1995 |
| Role of cuprous ion in copper electrodeposition acceleration T Hayashi, S Matsuura, K Kondo, K Kataoka, K Nishimura, M Yokoi, ... Journal of The Electrochemical Society 162 (6), D199, 2015 | 32 | 2015 |
| Fabrication of metal–oxide–diamond field-effect transistors with submicron-sized gate length on boron-doped (111) H-terminated surfaces using electron beam evaporated SiO 2 and … T Saito, K Park, K Hirama, H Umezawa, M Satoh, H Kawarada, ZQ Liu, ... Journal of electronic materials 40, 247-252, 2011 | 30 | 2011 |
| The absolute configuration of eudesmane-type sesquiterpenoids found in the Japanese liverwort Chiloscyphus polyanthos M Toyota, T Saito, Y Asakawa Phytochemistry 51 (7), 913-920, 1999 | 30 | 1999 |
| Incorporation of butyl groups into chlorinated diamond surface carbons by organic reactions at ambient temperature T Saito, Y Ikeda, S Egawa, K Kusakabe, S Morooka, H Maeda, ... Journal of the Chemical Society, Faraday Transactions 94 (7), 929-932, 1998 | 27 | 1998 |
| A case of acute subdural hematoma due to dural metastasis from malignant pleural mesothelioma M Sato, T Saito, K Yamaguchi, H Sakuma No Shinkei geka. Neurological Surgery 22 (3), 247-251, 1994 | 26 | 1994 |
| Growth behavior of boron-doped diamond in microwave plasma-assisted chemical vapor deposition using trimethylboron as the dopant source H Maeda, K Ohtsubo, M Kameta, T Saito, K Kusakabe, S Morooka, ... Diamond and related materials 7 (1), 88-95, 1998 | 25 | 1998 |
| Synthesis and electrical properties of phosphorus-doped homoepitaxial diamond (111) by microwave plasma-assisted chemical vapor deposition using triethylphosphine as a dopant … T Saito, M Kameta, K Kusakabe, S Morooka, H Maeda, Y Hayashi, ... Japanese journal of applied physics 37 (5A), L543, 1998 | 24 | 1998 |
| Correlation between filled via and produced cuprous ion concentration by reverse current waveform T Hayashi, K Kondo, T Saito, N Okamoto, M Yokoi, M Takeuchi, M Bunya, ... Journal of The Electrochemical Society 160 (6), D256, 2013 | 23 | 2013 |
| The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth—Study of surface morphology N Tokuda, T Saito, H Umezawa, H Okushi, S Yamasaki Diamond and related materials 16 (2), 409-411, 2007 | 20 | 2007 |
| The reactivity and molecular size of film precursors during chemical vapor deposition of WSix Y Shimogaki, T Saito, F Tadokoro, H Komiyama Le Journal de Physique IV 2 (C2), C2-95-C2-102, 1991 | 20 | 1991 |
| Five-minute TSV copper electrodeposition K Kondo, C Funahashi, Y Miyake, Y Takeno, T Hayashi, M Yokoi, ... Journal of the Electrochemical Society 161 (14), D791, 2014 | 19 | 2014 |
Hitoshi UmezawaNational Institute of Advanced Industrial Science and Technology, Institut Néel/CNRSVerified email at aist.go.jp
