Lan FU
TitleCited byYear
Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing
Q Gao, D Saxena, F Wang, L Fu, S Mokkapati, Y Guo, L Li, J Wong-Leung, ...
Nano letters 14 (9), 5206-5211, 2014
1522014
Ultraporous Electron‐Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible‐Blind UV Photodetectors
N Nasiri, R Bo, F Wang, L Fu, A Tricoli
Advanced Materials 27 (29), 4336-4343, 2015
1452015
Water droplet motion control on superhydrophobic surfaces: exploiting the Wenzel-to-Cassie transition
G Liu, L Fu, AV Rode, VSJ Craig
Langmuir 27 (6), 2595-2600, 2011
1182011
Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs
J Lloyd-Hughes, SKE Merchant, L Fu, HH Tan, C Jagadish, ...
Applied physics letters 89 (23), 232102, 2006
1142006
Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure
W Hu, K Lau, Y Liu, RL Withers, H Chen, L Fu, B Gong, W Hutchison
Chemistry of Materials 27 (14), 4934-4942, 2015
902015
Single nanowire photoconductive terahertz detectors
K Peng, P Parkinson, L Fu, Q Gao, N Jiang, YN Guo, F Wang, HJ Joyce, ...
Nano letters 15 (1), 206-210, 2015
802015
Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide
L Fu, P Lever, HH Tan, C Jagadish, P Reece, M Gal
Applied physics letters 82 (16), 2613-2615, 2003
732003
Broadband metamaterial absorbers
P Yu, LV Besteiro, Y Huang, J Wu, L Fu, HH Tan, C Jagadish, ...
Advanced Optical Materials 7 (3), 1800995, 2019
712019
In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition
L Fu, P Lever, K Sears, HH Tan, C Jagadish
IEEE electron device letters 26 (9), 628-630, 2005
622005
Tunable polarity in a III–V nanowire by droplet wetting and surface energy engineering
X Yuan, P Caroff, J Wong‐Leung, L Fu, HH Tan, C Jagadish
Advanced Materials 27 (40), 6096-6103, 2015
612015
Electron-hole recombination properties of quantum dot solar cells and the influence on the open circuit voltage
G Jolley, HF Lu, L Fu, HH Tan, C Jagadish
Applied Physics Letters 97 (12), 123505, 2010
592010
Extraordinarily bound quasi-one-dimensional trions in two-dimensional phosphorene atomic semiconductors
R Xu, S Zhang, F Wang, J Yang, Z Wang, J Pei, YW Myint, B Xing, Z Yu, ...
ACS nano 10 (2), 2046-2053, 2016
562016
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
K Stewart, M Buda, J Wong-Leung, L Fu, C Jagadish, A Stiff-Roberts, ...
Journal of applied physics 94 (8), 5283-5289, 2003
552003
Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
T Burgess, D Saxena, S Mokkapati, Z Li, CR Hall, JA Davis, Y Wang, ...
Nature communications 7 (1), 1-7, 2016
512016
Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors
N Nasiri, R Bo, L Fu, A Tricoli
Nanoscale 9 (5), 2059-2067, 2017
502017
Photoconductive response correction for detectors of terahertz radiation
E Castro-Camus, L Fu, J Lloyd-Hughes, HH Tan, C Jagadish, ...
Journal of Applied Physics 104 (5), 053113, 2008
492008
An ion-implanted InP receiver for polarization resolved terahertz spectroscopy
E Castro-Camus, J Lloyd-Hughes, L Fu, HH Tan, C Jagadish, ...
Optics express 15 (11), 7047-7057, 2007
462007
Room temperature GaAsSb single nanowire infrared photodetectors
Z Li, X Yuan, L Fu, K Peng, F Wang, X Fu, P Caroff, TP White, HH Tan, ...
Nanotechnology 26 (44), 445202, 2015
452015
Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells
HF Lu, L Fu, G Jolley, HH Tan, SR Tatavarti, C Jagadish
Applied Physics Letters 98 (18), 183509, 2011
452011
Effects of rapid thermal annealing on device characteristics of quantum dot infrared photodetectors
L Fu, HH Tan, I McKerracher, J Wong-Leung, C Jagadish, N Vukmirović, ...
Journal of applied physics 99 (11), 114517, 2006
452006
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Articles 1–20