Max Shatalov
Max Shatalov
CVD Equipment Corporation
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III–nitride UV devices
MA Khan, M Shatalov, HP Maruska, HM Wang, E Kuokstis
Japanese journal of applied physics 44 (10R), 7191, 2005
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%
M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ...
Applied Physics Express 5 (8), 082101, 2012
Deep Ultraviolet Light-Emitting Diodes
M Shur, M Shatalov, A Dobrinsky, R Gaska
GaN and ZnO-based Materials and Devices, 83-120, 2012
Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
A Chitnis, C Chen, V Adivarahan, M Shatalov, E Kuokstis, V Mandavilli, ...
Applied Physics Letters 84 (18), 3663-3665, 2004
Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm
JP Zhang, A Chitnis, V Adivarahan, S Wu, V Mandavilli, R Pachipulusu, ...
Applied physics letters 81 (26), 4910-4912, 2002
light-emitting diodes
V Adivarahan, WH Sun, A Chitnis, M Shatalov, S Wu, HP Maruska, ...
Applied physics letters 85 (12), 2175-2177, 2004
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ...
Applied Physics Letters 84 (23), 4762-4764, 2004
High power AlGaN ultraviolet light emitters
M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ...
Semiconductor Science and Technology 29 (8), 084007, 2014
Microbial UV fluence-response assessment using a novel UV-LED collimated beam system
C Bowker, A Sain, M Shatalov, J Ducoste
Water research 45 (5), 2011
Selective area deposited blue GaN–InGaN multiple-quantum well light emitting diodes over silicon substrates
JW Yang, A Lunev, G Simin, A Chitnis, M Shatalov, MA Khan, ...
Applied Physics Letters 76 (3), 273-275, 2000
AlGaN-based light-emitting diodes with continuous-wave power exceeding at
JP Zhang, X Hu, Y Bilenko, J Deng, A Lunev, MS Shur, R Gaska, ...
Applied physics letters 85 (23), 5532-5534, 2004
Ultraviolet light emitting diodes using non-polar a-plane GaN-AlGaN multiple quantum wells
C Chen, V Adivarahan, J Yang, M Shatalov, E Kuokstis, MA Khan
Japanese journal of applied physics 42 (9A), L1039, 2003
Ultraviolet light-emitting diodes at 340 nm using quaternary AlInGaN multiple quantum wells
V Adivarahan, A Chitnis, JP Zhang, M Shatalov, JW Yang, G Simin, ...
Applied Physics Letters 79 (25), 4240-4242, 2001
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
W Sun, M Shatalov, J Deng, X Hu, J Yang, A Lunev, Y Bilenko, M Shur, ...
Applied Physics Letters 96 (6), 061102, 2010
Sub-milliwatt power III-N light emitting diodes at 285 nm
V Adivarahan, J Zhang, A Chitnis, W Shuai, J Sun, R Pachipulusu, ...
Japanese journal of applied physics 41 (4B), L435, 2002
-based light-emitting diodes with continuous wave powers in excess of
WH Sun, JP Zhang, V Adivarahan, A Chitnis, M Shatalov, S Wu, ...
Applied physics letters 85 (4), 531-533, 2004
Ultraviolet system for disinfection
M Shur, M Shatalov, TJ Bettles, Y Bilenko, S Smetona, A Dobrinsky, ...
US Patent 9,179,703, 2015
Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers
J Zhang, J Yang, G Simin, M Shatalov, MA Khan, MS Shur, R Gaska
Applied Physics Letters 77 (17), 2668-2670, 2000
Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes
A Chitnis, JP Zhang, V Adivarahan, M Shatalov, S Wu, R Pachipulusu, ...
Applied physics letters 82 (16), 2565-2567, 2003
High-quality junctions with quaternary AlInGaN/InGaN quantum wells
A Chitnis, A Kumar, M Shatalov, V Adivarahan, A Lunev, JW Yang, ...
Applied Physics Letters 77 (23), 3800-3802, 2000
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