| Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources S Zhao, AT Connie, MHT Dastjerdi, XH Kong, Q Wang, M Djavid, S Sadaf, ... Scientific reports 5 (1), 8332, 2015 | 253 | 2015 |
| Full-color single nanowire pixels for projection displays YH Ra, R Wang, SY Woo, M Djavid, SM Sadaf, J Lee, GA Botton, Z Mi Nano Letters 16 (7), 4608-4615, 2016 | 181 | 2016 |
| An AlGaN Core-Shell Tunnel Junction Nanowire Light Emitting Diode Operating in the Ultraviolet-C Band SM Sadaf, S Zhao, Y Wu, YH Ra, X Liu, S Vanka, Z Mi Nano Letters, 2017 | 137 | 2017 |
| Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers HPT Nguyen, M Djavid, SY Woo, X Liu, AT Connie, S Sadaf, Q Wang, ... Scientific reports 5 (1), 7744, 2015 | 128 | 2015 |
| Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang Nanotechnology 22 (47), 475702, 2011 | 117 | 2011 |
| Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes SM Sadaf, YH Ra, HPT Nguyen, M Djavid, Z Mi Nano letters 15 (10), 6696-6701, 2015 | 105 | 2015 |
| Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang IEEE Electron Device Letters 33 (2), 236-238, 2011 | 92 | 2011 |
| An electrically pumped surface-emitting semiconductor green laser YH Ra, RT Rashid, X Liu, SM Sadaf, K Mashooq, Z Mi Science Advances 6 (1), eaav7523, 2020 | 85 | 2020 |
| Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm S Zhao, SM Sadaf, S Vanka, Y Wang, R Rashid, Z Mi Applied Physics Letters 109 (20), 2016 | 84 | 2016 |
| Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics S Zhao, SY Woo, SM Sadaf, Y Wu, A Pofelski, DA Laleyan, RT Rashid, ... Apl Materials 4 (8), 2016 | 84 | 2016 |
| Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1− xN nanowire based light emitting diodes Q Wang, AT Connie, HPT Nguyen, MG Kibria, S Zhao, S Sharif, I Shih, ... Nanotechnology 24 (34), 345201, 2013 | 78 | 2013 |
| Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy AT Connie, S Zhao, SM Sadaf, I Shih, Z Mi, X Du, J Lin, H Jiang Applied Physics Letters 106 (21), 2015 | 67 | 2015 |
| Complementary resistive switching in niobium oxide-based resistive memory devices X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang IEEE electron device letters 34 (2), 235-237, 2013 | 67 | 2013 |
| Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ... IEEE electron device letters 33 (5), 718-720, 2012 | 66 | 2012 |
| Monolithically integrated metal/semiconductor tunnel junction nanowire light-emitting diodes SM Sadaf, YH Ra, T Szkopek, Z Mi Nano letters 16 (2), 1076-1080, 2016 | 60 | 2016 |
| Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes X Hai, RT Rashid, SM Sadaf, Z Mi, S Zhao Applied Physics Letters 114 (10), 2019 | 44 | 2019 |
| Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ... physica status solidi (a) 209 (6), 1179-1183, 2012 | 43 | 2012 |
| Catalyst regeneration via chemical oxidation enables long-term electrochemical carbon dioxide reduction TN Nguyen, Z Chen, AS Zeraati, HS Shiran, SM Sadaf, MG Kibria, ... Journal of the American Chemical Society 144 (29), 13254-13265, 2022 | 36 | 2022 |
| Ferroelectricity-induced resistive switching in Pb (Zr0. 52Ti0. 48) O3/Pr0. 7Ca0. 3MnO3/Nb-doped SrTiO3 epitaxial heterostructure S Md Sadaf, M El Bourim, X Liu, S Hasan Choudhury, DW Kim, H Hwang Applied Physics Letters 100 (11), 2012 | 36 | 2012 |
| Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells R Cheriton, SM Sadaf, L Robichaud, JJ Krich, Z Mi, K Hinzer Communications Materials 1 (1), 63, 2020 | 27 | 2020 |
Zetian MiUniversity of Michigan, Ann ArborVerified email at umich.edu
