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Ruben Seisyan
Ruben Seisyan
ФТИ им. А.Ф.Иоффе, лаборатория квантоворазмерных гетероструктур
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Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
physica status solidi (b) 229 (3), r1-r3, 2002
13762002
Tamm plasmon polaritons: Slow and spatially compact light
ME Sasin, RP Seisyan, MA Kalitteevski, S Brand, RA Abram, ...
Applied physics letters 92 (25), 251112, 2008
3502008
Nanolithography in microelectronics: A review
RP Seisyan
Technical Physics 56 (8), 1061-1073, 2011
1302011
Phys. Status Solidi B https://doi. org/10.1002/1521-3951 (200202) 229: 3< R1:: AID-PSSB99991> 3.0. CO; 2-O 229
VY Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
R1, 2002
1182002
RETRACTED: Tamm plasmon-polaritons: First experimental observation
ME Sasin, RP Seisyan, MA Kaliteevski, S Brand, RA Abram, ...
Superlattices and Microstructures 47 (1), 44-49, 2010
932010
Спектроскопия диамагнитных экситонов
РП Сейсян
Наука. Гл. ред. физ.-мат. лит., 1984
651984
Exciton-polariton light absorption in bulk GaAs and semiconductor superlattices
VA Kosobukin, RP Seisyan, SA Vaganov
Semiconductor science and technology 8 (7), 1235, 1993
551993
Spectroscopy of Diamagnetic Excitons
RP Seisyan
Science, Moscow, 1984
511984
Нанолитография СБИС в экстремально дальнем вакуумном ультрафиолете (обзор
Р Сейсян
Журнал технической физики 75 (5), 1-13, 2005
432005
Нанолитография в микроэлектронике (Обзор)
РП Сейсян
Журнал технической физики 81 (8), 1-14, 2011
422011
Absorption and emission of hexagonal InN. evidence of narrow fundamental band
V Yu Davydov, AA Klochikhin, RP Seisyan, VV Emtsev, SV Ivanov, ...
Gap Phys Status Solidi (b) 229, R1, 2002
382002
Extreme ultraviolet nanolithography for ULSI: A review
RP Seisyan
Technical physics 50 (5), 535-545, 2005
342005
Exciton in a semiconductor quantum well subjected to a strong magnetic field
AV Kavokin, AI Nesvizhskii, RP Seisyan
Semiconductors 27 (6), 530-536, 1993
321993
Semiconductor laser with extremely low divergence of radiation
ZI Alferov, SA Gurevich, RF Kazarinov, MN Mizerov, EL Portnoi
Sov. Phys. Semiconductor 8, 541, 1974
301974
Detection of the Exciton Structure of the Absorption Edge of Indium Antimonide Crystals
LM Kanskaya, SI Kokhanovskii, RP Seisyan
Fizika i Tekhnika Poluprovodnikov 13 (12), 2424-2426, 1979
281979
Diamagnetic excitons and exciton magnetopolaritons in semiconductors
RP Seisyan
Semiconductor Science and Technology 27 (5), 053001, 2012
252012
Observation of the Exciton Structure of the Fundamental Absorption Edge of InAs Crystals
AV Varfolomeev, RP Seisyan, RN Yakimova
Soviet Physics-Semiconductors 9 (4), 530, 1975
251975
High-temperature effectiveness limit of exciton-polariton processes in cadmium and zinc telluride crystals
GN Aliev, OS Koshchug, RP Seisyan
Physics of the Solid State 36 (2), 203-211, 1994
231994
Two-dimensional photonic crystal fabrication using fullerene films
ME Gaevski, SO Kognovitskii, SG Konnikov, AV Nashchekin, SI Nesterov, ...
Nanotechnology 11 (4), 270, 2000
222000
Exciton‐Polariton Behaviour of the Absorption Edge of Thin GaAs Crystals with the “Super‐Quantum” Thickness and MQW Enlarged Barriers
GN Aliev, NV Lukyanova, RP Seisyan, MR Vladimirova, H Gibbs, ...
physica status solidi (a) 164 (1), 193-197, 1997
221997
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