| Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE K Ikejiri, J Noborisaka, S Hara, J Motohisa, T Fukui Journal of Crystal Growth 298, 616-619, 2007 | 189 | 2007 |
| Selective-area growth of III-V nanowires and their applications K Tomioka, K Ikejiri, T Tanaka, J Motohisa, S Hara, K Hiruma, T Fukui Journal of Materials Research 26 (17), 2127-2141, 2011 | 158 | 2011 |
| Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy K Ikejiri, T Sato, H Yoshida, K Hiruma, J Motohisa, S Hara, T Fukui Nanotechnology 19 (26), 265604, 2008 | 135 | 2008 |
| Zinc blende and wurtzite crystal phase mixing and transition in indium phosphide nanowires K Ikejiri, Y Kitauchi, K Tomioka, J Motohisa, T Fukui Nano letters 11 (10), 4314-4318, 2011 | 121 | 2011 |
| Analysis of twin defects in GaAs nanowires and tetrahedra and their correlation to GaAs (1 1 1) B surface reconstructions in selective-area metal organic vapour-phase epitaxy H Yoshida, K Ikejiri, T Sato, S Hara, K Hiruma, J Motohisa, T Fukui Journal of crystal growth 312 (1), 52-57, 2009 | 51 | 2009 |
| Bidirectional growth of indium phosphide nanowires K Ikejiri, F Ishizaka, K Tomioka, T Fukui Nano letters 12 (9), 4770-4774, 2012 | 39 | 2012 |
| GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE K Ikejiri, F Ishizaka, K Tomioka, T Fukui Nanotechnology 24 (11), 115304, 2013 | 33 | 2013 |
| Influence of growth temperature on growth of InGaAs nanowires in selective-area metal–organic vapor-phase epitaxy Y Kohashi, T Sato, K Ikejiri, K Tomioka, S Hara, J Motohisa Journal of crystal growth 338 (1), 47-51, 2012 | 29 | 2012 |
| Storage device and control method for the same K Ikejiri, M Innan, H Tabuchi US Patent 8,086,877, 2011 | 29 | 2011 |
| Indium-rich InGaP nanowires formed on InP (111) A substrates by selective-area metal organic vapor phase epitaxy F Ishizaka, K Ikejiri, K Tomioka, T Fukui Japanese Journal of Applied Physics 52 (4S), 04CH05, 2013 | 13 | 2013 |
| Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical … K Ikejiri, Y Hiroyama, K Kasahara, C Hirooka, T Osada, M Tanaka, ... Semiconductor Science and Technology 36 (1), 014004, 2020 | 7 | 2020 |
| Correction to Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires K Ikejiri, Y Kitauchi, K Tomioka, J Motohisa, T Fukui Nano Letters 12 (1), 524-525, 2012 | 2 | 2012 |
| Growth of GaAs nanowires on Poly-Si by selective-area MOVPE K Ikejiri, K Tomioka, S Imai, T Fukui International Conference on Solid State Devices and Materials, 2011 | 2 | 2011 |
| Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD J Yoshinaga, K Ikejiri, S Koseki, K Uesugi, H Miyake Gallium Nitride Materials and Devices XIX 12886, 51-52, 2024 | | 2024 |
| “Hitachi Universal Storage Platform V” and “Hitachi Universal Storage Platform VM,” the Enterprise Disk Array with Enhanced Storage Virtualization K Ikejiri, M Innan, H Nagaya, Y Nagasoe Hitachi Review 57 (2), 71, 2008 | | 2008 |
| Demonstration of AlGaN-based Far-UVC LED Epitaxial Growth by Using SR4000HT and Development of Technology to Improve Uniformity by Controlling Al Composition and Thickness of AlGaN J YOSHINAGA, K IKEJIRI, H TOKUNAGA, S KOSEKI, M JO, H HIRAYAMA | | |
| InGaP Nanowires grown by Selective-Area MOVPE F Ishizaka, K Ikejiri, K Tomioka, T Fukui | | |
| GaAs and Related III-V Nanowires Formed by Using Selective-Area Metal-Organic Vapor-phase Epitaxy and Their Applications to Optoelectronics K Hiruma, S Fujisawa, K Ikejiri, K Tomioka, S Hara, J Motohisa, T Fukui | | |
