| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 148 | 2021 |
| Interfacial metal–oxide interactions in resistive switching memories DY Cho, M Luebben, S Wiefels, KS Lee, I Valov ACS applied materials & interfaces 9 (22), 19287-19295, 2017 | 117 | 2017 |
| Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx M Lübben, S Wiefels, R Waser, I Valov Advanced electronic materials 4 (1), 1700458, 2018 | 114 | 2018 |
| HRS instability in oxide-based bipolar resistive switching cells S Wiefels, C Bengel, N Kopperberg, K Zhang, R Waser, S Menzel IEEE transactions on electron devices 67 (10), 4208-4215, 2020 | 39 | 2020 |
| Impact of the ohmic electrode on the endurance of oxide-based resistive switching memory S Wiefels, M Von Witzleben, M Hüttemann, U Böttger, R Waser, S Menzel IEEE transactions on electron devices 68 (3), 1024-1030, 2021 | 33 | 2021 |
| Comprehensive model for the electronic transport in analog memristive devices C Funck, C Bäumer, S Wiefels, T Hennen, R Waser, S Hoffmann-Eifert, ... Physical Review B 102 (3), 035307, 2020 | 25 | 2020 |
| A consistent model for short-term instability and long-term retention in filamentary oxide-based memristive devices N Kopperberg, S Wiefels, S Liberda, R Waser, S Menzel ACS Applied Materials & Interfaces 13 (48), 58066-58075, 2021 | 23 | 2021 |
| Intrinsic RESET speed limit of valence change memories M von Witzleben, S Wiefels, A Kindsmüller, P Stasner, F Berg, ... ACS Applied Electronic Materials 3 (12), 5563-5572, 2021 | 22 | 2021 |
| Reliability aspects of binary vector-matrix-multiplications using ReRAM devices C Bengel, J Mohr, S Wiefels, A Singh, A Gebregiorgis, R Bishnoi, ... Neuromorphic computing and engineering 2 (3), 034001, 2022 | 20 | 2022 |
| A voltage-controlled, oscillation-based adc design for computation-in-memory architectures using emerging rerams M Mayahinia, A Singh, C Bengel, S Wiefels, MA Lebdeh, S Menzel, ... ACM Journal on Emerging Technologies in Computing Systems (JETC) 18 (2), 1-25, 2022 | 15 | 2022 |
| Effect of electron conduction on the read noise characteristics in ReRAM devices K Schnieders, C Funck, F Cüppers, S Aussen, T Kempen, ... APL Materials 10 (10), 2022 | 9 | 2022 |
| Statistical Modeling and Understanding of HRS Retention in 2.5 Mb HfO2 based ReRAM S Wiefels, U Böttger, S Menzel, DJ Wouters, R Waser 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 9 | 2020 |
| Endurance of 2 Mbit based BEOL integrated ReRAM N Kopperberg, S Wiefels, K Hofmann, J Otterstedt, DJ Wouters, R Waser, ... IEEE Access 10, 122696-122705, 2022 | 8 | 2022 |
| Reliability aspects in resistively switching valence change memory cells S Wiefels Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2021, 2021 | 7 | 2021 |
| Tailor-made synaptic dynamics based on memristive devices C Bengel, K Zhang, J Mohr, T Ziegler, S Wiefels, R Waser, D Wouters, ... Frontiers in electronic materials 3, 1061269, 2023 | 6 | 2023 |
| Memristive devices for time domain compute-in-memory F Freye, J Lou, C Bengel, S Menzel, S Wiefels, T Gemmeke IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022 | 6 | 2022 |
| Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO2 based ReRAM S Wiefels, U Böttger, S Menzel, DJ Wouters, R Waser 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | 5 | 2020 |
| Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory S Wiefels, N Kopperberg, K Hofmann, J Otterstedt, D Wouters, R Waser, ... physica status solidi (a), 2300401, 2023 | 2 | 2023 |
| Advanced Electrical Characterization of Memristive Arrays for Neuromorphic Applications S Wiefels, X Liu, K Schnieders, M Schumacher, R Waser, L Nielen 2023 IEEE International Conference on Metrology for eXtended Reality …, 2023 | 1 | 2023 |
| Reset kinetics of 28 nm integrated ReRAM S Wiefels, N Kopperberg, K Hofmann, J Otterstedt, D Wouters, R Waser, ... 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-4, 2023 | 1 | 2023 |
