| MRAM as embedded non-volatile memory solution for 22FFL FinFET technology O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... 2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018 | 151 | 2018 |
| 13.3 A 7Mb STT-MRAM in 22FFL FinFET technology with 4ns read sensing time at 0.9 V using write-verify-write scheme and offset-cancellation sensing technique L Wei, JG Alzate, U Arslan, J Brockman, N Das, K Fischer, T Ghani, ... 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 214-216, 2019 | 134 | 2019 |
| 2 MB array-level demonstration of STT-MRAM process and performance towards L4 cache applications JG Alzate, U Arslan, P Bai, J Brockman, YJ Chen, N Das, K Fischer, ... 2019 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2019 | 106 | 2019 |
| Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 68 | 2019 |
| Electric-field-induced submicrosecond resistive switching N Das, S Tsui, YY Xue, YQ Wang, CW Chu Physical Review B—Condensed Matter and Materials Physics 78 (23), 235418, 2008 | 48 | 2008 |
| Kinetics and relaxation of electroresistance in transition metal oxides: Model for resistive switching N Das, S Tsui, YY Xue, YQ Wang, CW Chu Physical Review B—Condensed Matter and Materials Physics 80 (11), 115411, 2009 | 13 | 2009 |
| IEEE Int. Electron Devices Meet O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... the press); https://ieee-iedm. org/program, 2018 | 9 | 2018 |
| Interfacial resistive oxide switch induced by reversible modification of defect structures S Tsui, YY Xue, N Das, YQ Wang, CW Chu Physical Review B—Condensed Matter and Materials Physics 80 (16), 165415, 2009 | 8 | 2009 |
| M, Mainuddin, M O Golonzka, J Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ... Meterelliyoz, P. Nguyen, D. Nikonov, K. O'brien, JO Donnell, K. Oguz, D …, 0 | 7 | |
| Electric Field Induced Resistive Switch in Transition Metal Oxides: A``Model''for Future Non-Volatile Memory Devices N Das, Y Xue, YQ Wang APS March Meeting Abstracts 2010, T38. 003, 2010 | | 2010 |
| E-field induced resistive switch in metal/praseodymium calcium manganite interfaces: A model for future nonvolatile memory devices N Das University of Houston, 2010 | | 2010 |
| Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device N Das, YY Xue, YQ Wang, CW Chu 2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS), 28-47, 2009 | | 2009 |
| Determination of Non-Accumulative Effects in PCMO Resistive Switches S Tsui, N Das, YQ Wang, YY Xue, CW Chu APS March Meeting Abstracts, B35. 008, 2008 | | 2008 |
| A Physical Model for Resistive Switching In Metal-Oxide Interface N Das, S Tsui, Y Wang, Y Xue, CW Chu APS March Meeting Abstracts, B35. 009, 2008 | | 2008 |
| Identifying Read/Write Speeds for Field-Induced Interfacial Resistive Switching. S Tsui, N Das, Y Wang, Y Xue, CW Chu APS March Meeting Abstracts, Y38. 006, 2007 | | 2007 |
| Characterizing oxide surfaces for successful interfacial resistive switching N Das, S Tsui, W Wang, Y Xue, CW Chu APS March Meeting Abstracts, Y38. 008, 2007 | | 2007 |
| Capacitance Investigation of the Field-Induced Resistive Switching Interface S Tsui, N Das, Y Wang, Y Xue, CW Chu APS March Meeting Abstracts, Y12. 001, 2006 | | 2006 |
| Bipolar Resistive Switching: a Defect Driven Nonvolatile Memory S Tsui, N Das, Y Xue, CW Chu Bulletin of the American Physical Society, 2005 | | 2005 |
