| Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films AF Khan, M Mehmood, AM Rana, MT Bhatti Applied Surface Science 255 (20), 8562-8565, 2009 | 124 | 2009 |
| Forming-free bipolar resistive switching in nonstoichiometric ceria films M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ... Nanoscale research letters 9, 1-8, 2014 | 99 | 2014 |
| Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material AM Rana, T Akbar, M Ismail, E Ahmad, F Hussain, I Talib, M Imran, ... Scientific reports 7 (1), 39539, 2017 | 93 | 2017 |
| Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ... ACS applied materials & interfaces 8 (9), 6127-6136, 2016 | 81 | 2016 |
| Characterization of rf-sputtered indium tin oxide thin films MT Bhatti, AM Rana, AF Khan Materials chemistry and physics 84 (1), 126-130, 2004 | 73 | 2004 |
| Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films AF Khan, M Mehmood, AM Rana, T Muhammad Applied Surface Science 256 (7), 2031-2037, 2010 | 67 | 2010 |
| Synthesis of yttrium and cerium doped ZnO nanoparticles as highly inexpensive and stable photocatalysts for hydrogen evolution I Ahmad, MS Akhtar, MF Manzoor, M Wajid, M Noman, E Ahmed, ... Journal of Rare Earths 39 (4), 440-445, 2021 | 47 | 2021 |
| Effects of Gibbs free energy difference and oxygen vacancies distribution in a bilayer ZnO/ZrO2 structure for applications to bipolar resistive switching M Ismail, MK Rahmani, SA Khan, J Choi, F Hussain, Z Batool, AM Rana, ... Applied Surface Science 498, 143833, 2019 | 47 | 2019 |
| Enhancement of resistive switching performance by introducing a thin non-stoichiometric CeO2-x switching layer in TiO2-based resistive random access memory M Ismail, SU Nisa, AM Rana, T Akbar, J Lee, S Kim Applied Physics Letters 114 (1), 2019 | 44 | 2019 |
| Investigations of structural, electronic and optical properties of YInO3 (Y= Rb, Cs, Fr) perovskite oxides using mBJ approximation for optoelectronic applications: a first … MI Hussain, RMA Khalil, F Hussain, M Imran, AM Rana, S Kim Materials Science in Semiconductor Processing 113, 105064, 2020 | 42 | 2020 |
| Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory M Ismail, Z Batool, K Mahmood, AM Rana, BD Yang, S Kim Results in Physics 18, 103275, 2020 | 41 | 2020 |
| Investigations of structural, electronic and optical properties of TM-GaO3 (TM= Sc, Ti, Ag) perovskite oxides for optoelectronic applications: a first principles study MI Hussain, RMA Khalil, F Hussain, M Imran, AM Rana, S Kim Materials Research Express 7 (1), 015906, 2020 | 41 | 2020 |
| Impact of work function on the resistive switching characteristics of M/ZnO/CeO2/Pt devices S Jabeen, M Ismail, AM Rana, E Ahmed Materials Research Express 4 (5), 056401, 2017 | 40 | 2017 |
| Optical characterization of rf-magnetron sputtered nanostructured SnO2 thin films AF Khan, M Mehmood, AM Rana, MT Bhatti, A Mahmood Chinese Physics Letters 26 (7), 077803, 2009 | 40 | 2009 |
| Enhanced resistive switching and magnetic properties of Gd-doped NiFe2O4 thin films prepared by chemical solution deposition method A Hao, M Ismail, S He, N Qin, R Chen, AM Rana, D Bao Materials Science and Engineering: B 229, 86-95, 2018 | 38 | 2018 |
| Performance stability and functional reliability in bipolar resistive switching of bilayer ceria based resistive random access memory devices M Ismail, I Talib, AM Rana, E Ahmed, MY Nadeem Journal of Applied Physics 117 (8), 2015 | 38 | 2015 |
| Coexistence of bipolar and unipolar resistive switching in Al-doped ceria thin films for non-volatile memory applications M Ismail, E Ahmed, AM Rana, I Talib, MY Nadeem Journal of Alloys and Compounds 646, 662-668, 2015 | 37 | 2015 |
| Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2/ITO structure for RRAM applications M Ismail, AM Rana, I Talib, TL Tsai, U Chand, E Ahmed, MY Nadeem, ... Solid State Communications 202, 28-34, 2015 | 37 | 2015 |
| Comparative study of polytype 2H-MoS2 and 3R-MoS2 systems by employing DFT RMA Khalil, F Hussain, AM Rana, M Imran, G Murtaza Physica E: low-dimensional Systems and Nanostructures 106, 338-345, 2019 | 36 | 2019 |
| Electrical conductivity enhancement by boron-doping in diamond using first principle calculations M Ullah, E Ahmed, F Hussain, AM Rana, R Raza Applied Surface Science 334, 40-44, 2015 | 35 | 2015 |
Mazhar MehmoodDepartment of Metallurgy and Materials Engineering, PIEAS, Islamabad 45650, PakistanVerified email at pieas.edu.pk
