Michael D. Williams
Title
Cited by
Cited by
Year
The sticking of O2 on a Pt (111) surface
AC Luntz, MD Williams, DS Bethune
The Journal of Chemical Physics 89, 4381, 1988
2911988
Molecular beam studies of H2 and D2 dissociative chemisorption on Pt(111)
AC Luntz, JK Brown, MD Williams
The Journal of chemical physics 93 (7), 5240-5246, 1990
1691990
Electrical study of Schottky barriers on atomically clean GaAs (110) surfaces
N Newman, M Van Schilfgaarde, T Kendelwicz, MD Williams, WE Spicer
Physical Review B 33 (2), 1146, 1986
1681986
Pseudomorphic InGaAs‐GaAsP quantum well modulators on GaAs
JE Cunningham, KW Goossen, MD Williams, WY Jan
Applied Physics Letters 60 (6), 727-729, 1992
541992
Fermi level pinning during oxidation of atomically clean n‐InP(110)
KA Bertness, T Kendelewicz, RS List, MD Williams, I Lindau, WE Spicer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986
441986
Laser IR polarization spectroscopy at surfaces
DS Bethune, MD Williams, AC Luntz
The Journal of Chemical Physics 88, 3322, 1988
431988
Coexistence of precursor and direct dynamics: The sticking of O2 on a Pt(111) surface
MD Williams, DS Bethune, AC Luntz
The Journal of chemical physics 88 (4), 2843-2845, 1988
431988
Experimental results examining various models of Schottky barrier formation on GaAs
WE Spicer, N Newman, T Kendelewicz, WG Petro, MD Williams, ...
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985
401985
Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers
N Newman, KK Chin, WG Petro, T Kendelewicz, MD Williams, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985
391985
Polarimetry of specular and non-multiple-scattered electromagnetic radiation from selectively roughened Si surfaces
MD Williams, DE Aspnes
Physical Review Letters 41 (24), 1667, 1978
341978
Photoelectron spectroscopy studies of plasma-fluorinated epitaxial graphene
SD Sherpa, SA Paniagua, G Levitin, SR Marder, MD Williams, DW Hess
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2012
332012
Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface
T Kendelewicz, WG Petro, SH Pan, MD Williams, I Lindau, WE Spicer
Applied physics letters 44 (1), 113-115, 1984
281984
Dimerization induced incorporation nonlinearities in GaAsP
JE Cunningham, MB Santos, KW Goossen, MD Williams, W Jan
Applied Physics Letters 64 (18), 2418-2420, 1994
221994
Measured transition from two-dimensional to three-dimensional electroabsorption as quantum-well barriers are lowered
KW Goossen, JE Cunningham, MD Williams, FG Storz, WY Jan
Physical Review B 45 (23), 13773, 1992
221992
Chemical and electrical properties at the annealed Ti/GaAs (110) interface
CE McCants, T Kendelewicz, PH Mahowald, KA Bertness, MD Williams, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3 …, 1988
221988
Interfacial chemistry and Schottky-barrier formation of the Ni/InP (110) and Ni/GaAs (110) interfaces
T Kendelewicz, MD Williams, WG Petro, I Lindau, WE Spicer
Physical Review B 32 (6), 3758, 1985
221985
Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP (110)
T Kendelewicz, MD Williams, WG Petro, I Lindau, WE Spicer
Physical Review B 31 (10), 6503, 1985
201985
Self-Assembly of Biofunctional Polymer on Graphene Nanoribbons
DG Reuven, K Suggs, MD Williams, XQ Wang
ACS Nano 6 (2), 1011-1017, 2012
192012
Chemical reaction and anion trapping at the Yb/GaAs (110) interface
J Nogami, MD Williams, T Kendelewicz, I Lindau, WE Spicer
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986
191986
Effect of temperature on InGaAsP alloy composition
RM Lum, ML Mc Donald, EM Mack, MD Williams, FG Storz, J Levkoff
Journal of Electronic Materials 24 (11), 1577-1581, 1995
181995
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Articles 1–20