| Aluminum oxide from trimethylaluminum and water by atomic layer deposition: The temperature dependence of residual stress, elastic modulus, hardness and adhesion OME Ylivaara, X Liu, L Kilpi, J Lyytinen, D Schneider, M Laitinen, J Julin, ... Thin Solid Films 552, 124-135, 2014 | 201 | 2014 |
| Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors M Putkonen, M Bosund, OME Ylivaara, RL Puurunen, L Kilpi, ... Thin Solid Films 558, 93-98, 2014 | 90 | 2014 |
| Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices C Hartmann, J Wollweber, S Sintonen, A Dittmar, L Kirste, S Kollowa, ... CrystEngComm 18 (19), 3488-3497, 2016 | 80 | 2016 |
| Defects in single crystalline ammonothermal gallium nitride S Suihkonen, S Pimputkar, S Sintonen, F Tuomisto Advanced Electronic Materials 3 (6), 1600496, 2017 | 55 | 2017 |
| Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties OME Ylivaara, L Kilpi, X Liu, S Sintonen, S Ali, M Laitinen, J Julin, E Haimi, ... Journal of Vacuum Science & Technology A 35 (1), 2017 | 49 | 2017 |
| Diamond-like carbon (DLC) thin film bioelectrodes: Effect of thermal post-treatments and the use of Ti adhesion layer T Laurila, A Rautiainen, S Sintonen, H Jiang, E Kaivosoja, J Koskinen Materials Science and Engineering: C 34, 446-454, 2014 | 44 | 2014 |
| Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN S Sintonen, M Rudziński, S Suihkonen, H Jussila, M Knetzger, E Meissner, ... Journal of Applied Physics 116 (8), 2014 | 43 | 2014 |
| X-ray reflectivity characterization of atomic layer deposition Al2O3/TiO2 nanolaminates with ultrathin bilayers S Sintonen, S Ali, OME Ylivaara, RL Puurunen, H Lipsanen Journal of Vacuum Science & Technology A 32 (1), 2014 | 40 | 2014 |
| Thermal conductivity of amorphous Al2O3/TiO2 nanolaminates deposited by atomic layer deposition S Ali, T Juntunen, S Sintonen, OME Ylivaara, RL Puurunen, H Lipsanen, ... Nanotechnology 27 (44), 445704, 2016 | 32 | 2016 |
| Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD S Särkijärvi, S Sintonen, F Tuomisto, M Bosund, S Suihkonen, H Lipsanen Journal of crystal growth 398, 18-22, 2014 | 24 | 2014 |
| Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN S Sintonen, P Kivisaari, S Pimputkar, S Suihkonen, T Schulz, JS Speck, ... Journal of Crystal Growth 456, 43-50, 2016 | 23 | 2016 |
| Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography S Sintonen, S Suihkonen, H Jussila, A Danilewsky, R Stankiewicz, ... Applied Physics Express 7 (9), 091003, 2014 | 23 | 2014 |
| Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon L Kilpi, OME Ylivaara, A Vaajoki, J Malm, S Sintonen, M Tuominen, ... Journal of Vacuum Science & Technology A 34 (1), 2016 | 21 | 2016 |
| Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition OME Ylivaara, A Langner, X Liu, D Schneider, J Julin, K Arstila, ... Thin Solid Films 732, 138758, 2021 | 20 | 2021 |
| Nanotribological, nanomechanical and interfacial characterization of atomic layer deposited TiO2 on a silicon substrate J Lyytinen, X Liu, OME Ylivaara, S Sintonen, A Iyer, S Ali, J Julin, ... Wear 342, 270-278, 2015 | 18 | 2015 |
| Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN M Ali, AE Romanov, S Suihkonen, O Svensk, S Sintonen, M Sopanen, ... Journal of crystal growth 344 (1), 59-64, 2012 | 17 | 2012 |
| Evolution of impurity incorporation during ammonothermal growth of GaN S Sintonen, S Wahl, S Richter, S Meyer, S Suihkonen, T Schulz, ... Journal of Crystal Growth 456, 51-57, 2016 | 15 | 2016 |
| Patterning of sapphire/GaN substrates S Suihkonen, M Ali, O Svensk, S Sintonen, M Sopanen, H Lipsanen, ... physica status solidi c 8 (5), 1509-1512, 2011 | 15 | 2011 |
| An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE PT Törmä, M Ali, O Svensk, S Sintonen, P Kostamo, S Suihkonen, ... Physica B: Condensed Matter 404 (23-24), 4911-4915, 2009 | 15 | 2009 |
| Defect structure of a free standing GaN wafer grown by the ammonothermal method S Sintonen, S Suihkonen, H Jussila, H Lipsanen, TO Tuomi, E Letts, ... Journal of crystal growth 406, 72-77, 2014 | 12 | 2014 |
