4H-SiC n-Channel Insulated Gate Bipolar Transistors on (0001) and (000-1) Oriented Free-Standing n−Substrates S Chowdhury, C Hitchcock, Z Stum, R Dahal, IB Bhat, TP Chow IEEE Electron Device Letters 37 (3), 317-320, 2016 | 48 | 2016 |
Comparison of 600V Si, SiC and GaN power devices S Chowdhury, Z Stum, ZD Li, K Ueno, TP Chow Materials Science Forum 778, 971-974, 2014 | 45 | 2014 |
1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding JW Wu, S Chowdhury, C Hitchcock, JJQ Lu, TP Chow, W Kim, K Ngo 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's …, 2014 | 27 | 2014 |
Operating principles, design considerations, and experimental characteristics of high-voltage 4H-SiC bidirectional IGBTs S Chowdhury, CW Hitchcock, Z Stum, RP Dahal, IB Bhat, TP Chow IEEE Transactions on Electron Devices 64 (3), 888-896, 2016 | 25 | 2016 |
High temperature characteristics of monolithically integrated LED and MOS‐channel HEMT in GaN using selective epi removal Z Li, J Waldron, S Chowdhury, L Zhao, T Detchprohm, C Wetzel, ... physica status solidi (a) 212 (5), 1110-1115, 2015 | 18 | 2015 |
Fabrication of thick free-standing lightly-doped n-type 4H-SiC wafers RP Dahal, S Chowdhury, CW Hitchcock, TP Chow, I Bhat Materials Science Forum 897, 379-382, 2017 | 17 | 2017 |
S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs JW Wu, S Chowdhury, H Naik, J Picard, N Lee, C Hitchcock, JJQ Lu, ... 2014 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2014 | 17 | 2014 |
Reliability and ruggedness of 1200v SiC planar gate MOSFETs fabricated in a high volume CMOS foundry S Chowdhury, L Gant, B Powell, K Rangaswamy, K Matocha Materials Science Forum 924, 697-702, 2018 | 16 | 2018 |
Next generation 1200V, 3.5mΩ.cm2 SiC planar gate MOSFET with excellent HTRB reliability S Chowdhury, K Matocha, B Powell, G Sheh, S Banerjee 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 15 | 2018 |
Performance tradeoffs for ultra-high voltage (15 kV to 25 kV) 4H-SiC n-channel and p-channel IGBTs S Chowdhury, TP Chow 2016 28th International Symposium on Power Semiconductor Devices and ICs …, 2016 | 15 | 2016 |
An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing S Adhikary, K Ghosh, S Chowdhury, N Halder, S Chakrabarti Materials Research Bulletin 45 (10), 1466-1469, 2010 | 15 | 2010 |
Characteristics of MOS Capacitors with NO and POCl3 Annealed Gate Oxides on (0001), (11-20) and (000-1) 4H-SiC S Chowdhury, K Yamamoto, CW Hitchcock, TP Chow Materials Science Forum 821, 500-503, 2015 | 14 | 2015 |
Performance and reliability of 1200V SiC planar MOSFETs fabricated on 150mm SiC substrates B Powell, K Matocha, S Chowdhury, K Rangaswamy, C Hundley, L Gant 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2016 | 11 | 2016 |
Experimental demonstration of high-voltage 4H-SiC Bi-directional IGBTs S Chowdhury, C Hitchcock, Z Stum, RP Dahal, IB Bhat, TP Chow IEEE Electron Device Letters 37 (8), 1033-1036, 2016 | 11 | 2016 |
SiC power MOSFETs: Designing for reliability in wide-bandgap semiconductors K Matocha, IH Ji, X Zhang, S Chowdhury 2019 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2019 | 10 | 2019 |
Comparative evaluation of commercial 1200 V SiC power MOSFETs using diagnostic IV characterization at cryogenic temperatures S Chowdhury, CW Hitchcock, TP Chow Materials Science Forum 897, 545-548, 2017 | 10 | 2017 |
Characteristics of 4H-SiC PiN diodes on lightly doped free-standing substrates S Chowdhury, C Hitchcock, R Dahal, IB Bhat, TP Chow 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's …, 2015 | 8 | 2015 |
Impact of cell geometry on zero-energy turn-off of SiC power MOSFETs X Liu, S Chowdhury, CW Hitchcock, TP Chow Materials Science Forum 924, 756-760, 2018 | 6 | 2018 |
3300V SiC DMOSFETs fabricated in high-volume 150 mm CMOS fab B Powell, K Matocha, S Chowdhury, C Hundley Materials Science Forum 924, 731-734, 2018 | 6 | 2018 |
Comparison of silicon, SiC and GaN power transistor technologies with breakdown voltage rating from 1.2 kV to 15 kV S Chowdhury, Z Guo, X Liu, TP Chow physica status solidi (c) 13 (5‐6), 354-359, 2016 | 6 | 2016 |