From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction F La Via, A Severino, R Anzalone, C Bongiorno, G Litrico, M Mauceri, ... Materials Science in Semiconductor Processing 78, 57-68, 2018 | 123 | 2018 |
Thin crystalline 3C-SiC layer growth through carbonization of differently oriented Si substrates A Severino, G D’arrigo, C Bongiorno, S Scalese, F La Via, G Foti Journal of Applied Physics 102 (2), 2007 | 86 | 2007 |
High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates A Severino, C Bongiorno, N Piluso, M Italia, M Camarda, M Mauceri, ... Thin Solid Films 518 (6), S165-S169, 2010 | 73 | 2010 |
Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates R Anzalone, A Severino, G D’arrigo, C Bongiorno, G Abbondanza, G Foti, ... Journal of Applied Physics 105 (8), 2009 | 68 | 2009 |
Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins A Severino, C Frewin, C Bongiorno, R Anzalone, SE Saddow, F La Via Diamond and related materials 18 (12), 1440-1449, 2009 | 51 | 2009 |
3C-SiC film growth on Si substrates A Severino, C Locke, R Anzalone, M Camarda, N Piluso, A La Magna, ... ECS Transactions 35 (6), 99, 2011 | 35 | 2011 |
Effect of the miscut direction in (111) 3C-SiC film growth on off-axis (111) Si A Severino, M Camarda, G Condorelli, LMS Perdicaro, R Anzalone, ... Applied physics letters 94 (10), 2009 | 34 | 2009 |
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors P Fiorenza, M Vivona, F Iucolano, A Severino, S Lorenti, G Nicotra, ... Materials Science in Semiconductor Processing 78, 38-42, 2018 | 31 | 2018 |
Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device behavior … G Greco, P Fiorenza, F Iucolano, A Severino, F Giannazzo, F Roccaforte ACS applied materials & interfaces 9 (40), 35383-35390, 2017 | 29 | 2017 |
Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC M Camarda, A La Magna, A Severino, F La Via Thin Solid Films 518 (6), S159-S161, 2010 | 29 | 2010 |
Effect of high temperature annealing (T> 1650 C) on the morphological and electrical properties of p-type implanted 4H-SiC layers M Spera, D Corso, S Di Franco, G Greco, A Severino, P Fiorenza, ... Materials Science in Semiconductor Processing 93, 274-279, 2019 | 28 | 2019 |
Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films A Severino, M Camarda, S Scalese, P Fiorenza, S Di Franco, ... Applied Physics Letters 95 (11), 2009 | 27 | 2009 |
SiC films and coatings: amorphous, polycrystalline, and single crystal forms CW Locke, A Severino, F La Via, M Reyes, J Register, SE Saddow Silicon carbide biotechnology, 17-61, 2011 | 26 | 2011 |
Growth rate effect on 3C-SiC film residual stress on (100) Si substrates R Anzalone, C Locke, J Carballo, N Piluso, A Severino, G D'Arrigo, ... Materials Science Forum 645, 143-146, 2010 | 25 | 2010 |
Heteroepitaxial growth of (111) 3C-SiC on (110) Si substrate by second order twins R Anzalone, C Bongiorno, A Severino, G D’Arrigo, G Abbondanza, G Foti, ... Applied Physics Letters 92 (22), 2008 | 25 | 2008 |
Low stress heteroepitaxial 3C-SiC films characterized by microstructure fabrication and finite elements analysis R Anzalone, M Camarda, C Locke, D Alquier, A Severino, M Italia, ... Journal of The Electrochemical Society 157 (4), H438, 2010 | 23 | 2010 |
Microtwin reduction in 3C–SiC heteroepitaxy A Severino, F La Via Applied Physics Letters 97 (18), 2010 | 21 | 2010 |
Raman characterization of doped 3C-SiC/Si for different silicon substrates and C/Si ratios N Piluso, A Severino, M Camarda, R Anzalone, A Canino, G Condorelli, ... Materials Science Forum 645, 255-258, 2010 | 21 | 2010 |
3C-SiC epitaxial growth on large area silicon: Thin films A Severino Silicon Carbide Epitaxy 37, 145-191, 2012 | 17 | 2012 |
Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate F La Via, G D’Arrigo, A Severino, N Piluso, M Mauceri, C Locke, ... Journal of Materials Research 28 (1), 94-103, 2013 | 16 | 2013 |