SHADI SABRI
SHADI SABRI
R&D Engineer
Verified email at cree.com
Title
Cited by
Cited by
Year
Chemical vapor deposition synthesis of graphene on copper with methanol, ethanol, and propanol precursors
A Guermoune, T Chari, F Popescu, SS Sabri, J Guillemette, HS Skulason, ...
Carbon 49 (13), 4204-4210, 2011
3532011
Probing charge transfer at surfaces using graphene transistors
PL Levesque, SS Sabri, CM Aguirre, J Guillemette, M Siaj, P Desjardins, ...
Nano letters 11 (1), 132-137, 2011
3172011
Graphene field effect transistors with parylene gate dielectric
SS Sabri, PL Levesque, CM Aguirre, J Guillemette, R Martel, T Szkopek
Applied Physics Letters 95 (24), 242104, 2009
1322009
Short-circuit degradation of 10-kV 10-A SiC MOSFET
EP Eni, S Bęczkowski, S Munk-Nielsen, T Kerekes, R Teodorescu, ...
IEEE Transactions on Power Electronics 32 (12), 9342-9354, 2017
432017
Low-frequency noise and hysteresis in graphene field-effect transistors on oxide
SA Imam, S Sabri, T Szkopek
Micro & Nano Letters 5 (1), 37-41, 2010
402010
Quantum hall effect in hydrogenated graphene
J Guillemette, SS Sabri, B Wu, K Bennaceur, PE Gaskell, M Savard, ...
Physical review letters 110 (17), 176801, 2013
372013
New generation 6.5 kV SiC power MOSFET
S Sabri, E Van Brunt, A Barkley, B Hull, M O'Loughlin, A Burk, S Allen, ...
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
272017
Reliability studies of SiC vertical power MOSFETs
DJ Lichtenwalner, B Hull, E Van Brunt, S Sabri, DA Gajewski, D Grider, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-6, 2018
222018
Large area graphene ion sensitive field effect transistors with tantalum pentoxide sensing layers for pH measurement at the Nernstian limit
I Fakih, S Sabri, F Mahvash, M Nannini, M Siaj, T Szkopek
Applied Physics Letters 105 (8), 083101, 2014
222014
Reliability assessment of a large population of 3.3 kV, 45 A 4H-SIC MOSFETs
E Van Brunt, DJ Lichtenwalner, R Leonard, A Burk, S Sabri, B Hull, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
192017
Performance and reliability impacts of extended epitaxial defects on 4H-SiC power devices
E van Brunt, A Burk, DJ Lichtenwalner, R Leonard, S Sabri, DA Gajewski, ...
Materials Science Forum 924, 137-142, 2018
132018
Gate oxide reliability of SiC MOSFETs and capacitors fabricated on 150mm wafers
DJ Lichtenwalner, S Sabri, E Van Brunt, B Hull, S Ganguly, DA Gajewski, ...
Materials Science Forum 963, 745-748, 2019
112019
Enhancing gas induced charge doping in graphene field effect transistors by non-covalent functionalization with polyethyleneimine
SS Sabri, J Guillemette, A Guermoune, M Siaj, T Szkopek
Applied Physics Letters 100 (11), 113106, 2012
102012
Reliability of sic mosfet with danfoss bond buffer technology in automotive traction power modules
A Streibel, M Becker, O Muehlfeld, B Hull, S Sabri, DJ Lichtenwalner, ...
PCIM Europe 2019; International Exhibition and Conference for Power …, 2019
82019
Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes
A Kumar, K Vechalapu, S Bhattacharya, V Veliadis, E Van Brunt, D Grider, ...
2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2017
72017
Ruggedness of 6.5 kV, 30 a SiC MOSFETs in extreme transient conditions
A Kumar, S Parashar, S Sabri, E Van Brunt, S Bhattacharya, V Veliadis
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
52018
15 kV n-GTOs in 4H-SiC
SH Ryu, DJ Lichtenwalner, M O’Loughlin, C Capell, J Richmond, ...
Materials Science Forum 963, 651-654, 2019
42019
Static and dynamic characterization of a 3.3 kV, 45 A 4H-SiC MOSFET
A Anurag, G Gohil, S Acharya, KJ Han, K Vechalapu, BJ Baliga, ...
Materials Science Forum 924, 739-742, 2018
42018
Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes
SH Ryu, DJ Lichtenwalner, M O'Loughlin, E van Brunt, C Capell, C Jonas, ...
Materials Science Forum 924, 633-636, 2018
32018
Avalanche Ruggedness Characterization of 10 kV 4H-SiC MOSFETs
A Kumar, S Parashar, E Van Brunt, S Sabri, S Ganguly, S Bhattacharya, ...
Materials Science Forum 963, 773-776, 2019
22019
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