| Photooxidation and quantum confinement effects in exfoliated black phosphorus A Favron, E Gaufrès, F Fossard, AL Phaneuf-L’Heureux, NYW Tang, ... Nature materials 14 (8), 826-832, 2015 | 1341 | 2015 |
| Molecular beam epitaxy growth of S Tixier, M Adamcyk, T Tiedje, S Francoeur, A Mascarenhas, P Wei, ... Applied physics letters 82 (14), 2245-2247, 2003 | 531 | 2003 |
| Band gap of S Francoeur, MJ Seong, A Mascarenhas, S Tixier, M Adamcyk, T Tiedje Applied physics letters 82 (22), 3874-3876, 2003 | 511 | 2003 |
| Giant Spin-Orbit Bowing in B Fluegel, S Francoeur, A Mascarenhas, S Tixier, EC Young, T Tiedje Physical review letters 97 (6), 067205, 2006 | 499 | 2006 |
| High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ... Applied physics letters 75 (14), 2073-2075, 1999 | 297 | 1999 |
| Luminescence of as-grown and thermally annealed GaAsN/GaAs S Francoeur, G Sivaraman, Y Qiu, S Nikishin, H Temkin Applied physics letters 72 (15), 1857-1859, 1998 | 190 | 1998 |
| Excitons bound to nitrogen clusters in GaAsN S Francoeur, SA Nikishin, C Jin, Y Qiu, H Temkin Applied physics letters 75 (11), 1538-1540, 1999 | 108 | 1999 |
| Bi isoelectronic impurities in GaAs S Francoeur, S Tixier, E Young, T Tiedje, A Mascarenhas Physical Review B—Condensed Matter and Materials Physics 77 (8), 085209, 2008 | 100 | 2008 |
| High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ... Applied physics letters 75 (4), 484-486, 1999 | 99 | 1999 |
| Band gaps of the dilute quaternary alloys GaNxAs1− x− yBiy and Ga1− yInyNxAs1− x S Tixier, SE Webster, EC Young, T Tiedje, S Francoeur, A Mascarenhas, ... Applied Physics Letters 86 (11), 2005 | 94 | 2005 |
| Mid-infrared polarized emission from black phosphorus light-emitting diodes J Wang, A Rousseau, M Yang, T Low, S Francoeur, S Kéna-Cohen Nano letters 20 (5), 3651-3655, 2020 | 90 | 2020 |
| Polarization-resolved raman study of bulk-like and davydov-induced vibrational modes of exfoliated black phosphorus AL Phaneuf-L’Heureux, A Favron, JF Germain, P Lavoie, P Desjardins, ... Nano Letters 16 (12), 7761-7767, 2016 | 86 | 2016 |
| Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy A Bergeron, J Ibrahim, R Leonelli, S Francoeur Applied physics letters 110 (24), 2017 | 84 | 2017 |
| Optical spectroscopy of single impurity centers in semiconductors S Francoeur, JF Klem, A Mascarenhas Physical review letters 93 (6), 067403, 2004 | 81 | 2004 |
| Band gap of sphalerite and chalcopyrite phases of epitaxial ZnSnP2 P St-Jean, GA Seryogin, S Francoeur Applied Physics Letters 96 (23), 2010 | 54 | 2010 |
| Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects A Favron, E Gaufres, F Fossard, PL Lévesque, AL Phaneuf-L'Heureux, ... arXiv preprint arXiv:1408.0345, 2014 | 50 | 2014 |
| Phonon engineering in isotopically disordered silicon nanowires S Mukherjee, U Givan, S Senz, A Bergeron, S Francoeur, M De La Mata, ... Nano letters 15 (6), 3885-3893, 2015 | 49 | 2015 |
| Second-order Raman scattering in exfoliated black phosphorus A Favron, FA Goudreault, V Gosselin, J Groulx, M Côté, R Leonelli, ... Nano letters 18 (2), 1018-1027, 2018 | 48 | 2018 |
| Bi-induced vibrational modes in GaAsBi MJ Seong, S Francoeur, S Yoon, A Mascarenhas, S Tixier, M Adamcyk, ... Superlattices and Microstructures 37 (6), 394-400, 2005 | 37 | 2005 |
| Initiation and evolution of phase separation in heteroepitaxial InAlAs films B Shin, A Lin, K Lappo, RS Goldman, MC Hanna, S Francoeur, ... Applied physics letters 80 (18), 3292-3294, 2002 | 34 | 2002 |
Richard MartelProfessor of Chemistry, Universite de MontrealVerified email at umontreal.ca
