Gouri Sankar Kar
Gouri Sankar Kar
Program Director, IMEC Belgium
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα imec.be
Παρατίθεται από
Παρατίθεται από
IEEE Int. Electron Devices Meet
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Tech. Dig 729, 2011
10x10nm2 Hf/HfOx Cross-point Resistive RAM with Excellent Performance, Reliability and Low-Energy Operation
B Govoreanu, G Kar, Y Chen, V Paraschiv, S Kubicek, A Fantini, IP Radu, ...
Proceedings of the IEEE International Electron Devices Meeting (IEDM), 31.6, 2011
10×10nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
Endurance/Retention Trade-off on Cap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
Balancing SET/RESET Pulse for Endurance in 1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
Kinetic evolution and equilibrium morphology of strained islands
A Rastelli, M Stoffel, J Tersoff, GS Kar, OG Schmidt
Physical review letters 95 (2), 026103, 2005
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
IEEE Int. Electron Devices Meet
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
Tech. Dig 482, 2012
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
Charge storage and photoluminescence characteristics of silicon oxide embedded Ge nanocrystal trilayer structures
K Das, M NandaGoswami, R Mahapatra, GS Kar, A Dhar, HN Acharya, ...
Applied physics letters 84 (8), 1386-1388, 2004
Single-shot dynamics of spin–orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
E Grimaldi, V Krizakova, G Sala, F Yasin, S Couet, GS Kar, K Garello, ...
Nature Nanotechnology 15 (2), 111-117, 2020
Intrinsic switching behavior in HfO2 RRAM by fast electrical measurements on novel 2R test structures
A Fantini, DJ Wouters, R Degraeve, L Goux, L Pantisano, G Kar, YY Chen, ...
2012 4th IEEE International Memory Workshop, 1-4, 2012
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
K Garello, F Yasin, S Couet, L Souriau, J Swerts, S Rao, S Van Beek, ...
2018 IEEE Symposium on VLSI Circuits, 81-82, 2018
Analysis of complementary RRAM switching
DJ Wouters, L Zhang, A Fantini, R Degraeve, L Goux, YY Chen, ...
IEEE Electron Device Letters 33 (8), 1186-1188, 2012
Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system
L Goux, K Sankaran, G Kar, N Jossart, K Opsomer, R Degraeve, ...
2012 Symposium on VLSI Technology (VLSIT), 69-70, 2012
Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions
T Devolder, JV Kim, F Garcia-Sanchez, J Swerts, W Kim, S Couet, G Kar, ...
Physical Review B 93 (2), 024420, 2016
Extended wavelength region of self-assembled Ge/Si (001) islands capped with Si at different temperatures
M Stoffel, U Denker, GS Kar, H Sigg, OG Schmidt
Applied physics letters 83 (14), 2910-2912, 2003
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