|Water splitting to hydrogen over epitaxially grown InGaN nanowires on a metallic titanium/silicon template: reduced interfacial transfer resistance and improved stability to …|
M Ebaid, JW Min, C Zhao, TK Ng, H Idriss, BS Ooi
Journal of Materials Chemistry A 6 (16), 6922-6930, 2018
|Graded-index separate confinement heterostructure AlGaN nanowires: toward ultraviolet laser diodes implementation|
H Sun, D Priante, JW Min, RC Subedi, MK Shakfa, Z Ren, KH Li, R Lin, ...
ACS Photonics 5 (8), 3305-3314, 2018
|Efficient light absorption by GaN truncated nanocones for high performance water splitting applications|
YJ Kim, GJ Lee, S Kim, JW Min, SY Jeong, YJ Yoo, S Lee, YM Song
ACS applied materials & interfaces 10 (34), 28672-28678, 2018
|Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices|
JW Min, D Priante, M Tangi, G Liu, CH Kang, A Prabaswara, C Zhao, ...
Journal of Nanophotonics 12 (4), 043511, 2018
|III-nitride core–shell nanorod array on quartz substrates|
SY Bae, JW Min, HY Hwang, K Lekhal, HJ Lee, YD Jho, DS Lee, YT Lee, ...
Scientific reports 7 (1), 1-12, 2017
|Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy|
M Tangi, JW Min, D Priante, RC Subedi, DH Anjum, A Prabaswara, ...
Nano Energy 54, 264-271, 2018
|Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer|
A Prabaswara, JW Min, C Zhao, B Janjua, D Zhang, AM Albadri, ...
Nanoscale research letters 13 (1), 1-9, 2018
|Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes|
M Tangi, P Mishra, B Janjua, A Prabaswara, C Zhao, D Priante, JW Min, ...
Journal of Applied Physics 123 (10), 105702, 2018
|Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials|
N Alfaraj, JW Min, CH Kang, AA Alatawi, D Priante, RC Subedi, M Tangi, ...
Journal of Semiconductors 40 (12), 121801, 2019
|Stable MoS2 Field‐Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact|
W Park, JW Min, SF Shaikh, MM Hussain
physica status solidi (a) 214 (12), 1700534, 2017
|Improvement of efficiency in Graphene/Gallium Nitride nanowire on Silicon photoelectrode for overall water splitting|
H Bae, H Rho, JW Min, YT Lee, SH Lee, K Fujii, HJ Lee, JS Ha
Applied Surface Science, 2017
|Enhanced electro-optic performance of surface-treated nanowires: origin and mechanism of nanoscale current injection for reliable ultraviolet light-emitting diodes|
D Priante, M Tangi, JW Min, N Alfaraj, JW Liang, H Sun, HH Alhashim, ...
Optical Materials Express 9 (1), 203-215, 2019
|Enhanced photoelectrochemical performance of InGaN-based nanowire photoanodes by optimizing the ionized dopant concentration|
H Zhang, M Ebaid, JW Min, TK Ng, BS Ooi
Journal of Applied Physics 124 (8), 083105, 2018
|Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector|
Y Pak, S Mitra, N Alaal, B Xin, S Lopatin, D Almalawi, JW Min, H Kim, ...
Applied Physics Letters 116 (11), 112102, 2020
|Flexible InGaN nanowire membranes for enhanced solar water splitting|
RT ElAfandy, M Ebaid, JW Min, C Zhao, TK Ng, BS Ooi
Optics express 26 (14), A640-A650, 2018
|Selective‐area growth of doped GaN nanorods by pulsed‐mode MOCVD: Effect of Si and Mg dopants|
SY Bae, K Lekhal, HJ Lee, JW Min, DS Lee, Y Honda, H Amano
physica status solidi (b) 254 (8), 1600722, 2017
|Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD|
JW Min, SY Bae, WM Kang, KW Park, EK Kang, BJ Kim, DS Lee, YT Lee
CrystEngComm 17 (30), 5849-5859, 2015
|Highly stable and ultrafast hydrogen gas sensor based on 15 nm nanogaps switching in a palladium–gold nanoribbons array|
Y Pak, Y Jeong, N Alaal, H Kim, J Chae, JW Min, AAS Devi, S Mitra, ...
Advanced Materials Interfaces 6 (4), 1801442, 2019
|A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure|
NAA Zulkifli, K Park, JW Min, BS Ooi, R Zakaria, J Kim, CL Tan
Applied Physics Letters 117 (19), 191103, 2020
|Improved light extraction efficiency of GaN-based vertical LEDs using hierarchical micro/subwavelength structures|
EK Kang, E Kwon, JW Min, YM Song, YT Lee
Japanese Journal of Applied Physics 54 (6S1), 06FH02, 2015