David Cooper
David Cooper
CEA LETI Minatec Campus
Verified email at cea.fr
Title
Cited by
Cited by
Year
Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE
G Tourbot, C Bougerol, A Grenier, M Den Hertog, D Sam-Giao, D Cooper, ...
Nanotechnology 22 (7), 075601, 2011
1162011
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron …
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 131, 10-23, 2013
1092013
Anomalous resistance hysteresis in oxide ReRAM: oxygen evolution and reincorporation revealed by in situ TEM
D Cooper, C Baeumer, N Bernier, A Marchewka, C La Torre, ...
Advanced materials 29 (23), 1700212, 2017
1052017
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction
JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper
Applied Physics Letters 103 (24), 241913, 2013
952013
Mapping active dopants in single silicon nanowires using off-axis electron holography
MI Den Hertog, H Schmid, D Cooper, JL Rouviere, MT Björk, H Riel, ...
Nano letters 9 (11), 3837-3843, 2009
792009
Strain-induced performance enhancement of trigate and omega-gate nanowire FETs scaled down to 10-nm width
R Coquand, M Casse, S Barraud, D Cooper, V Maffini-Alvaro, ...
IEEE transactions on electron devices 60 (2), 727-732, 2012
782012
Medium resolution off-axis electron holography with millivolt sensitivity
D Cooper, R Truche, P Rivallin, JM Hartmann, F Laugier, F Bertin, ...
Applied physics letters 91 (14), 143501, 2007
752007
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
D Cooper, T Denneulin, N Bernier, A Béché, JL Rouvière
Micron 80, 145-165, 2016
742016
Strained tunnel FETs with record ION: first demonstration of ETSOI TFETs with SiGe channel and RSD
A Villalon, C Le Royer, M Cassé, D Cooper, B Prévitali, C Tabone, ...
2012 Symposium on VLSI technology (VLSIT), 49-50, 2012
722012
Improvement in electron holographic phase images of focused-ion-beam-milled GaAs and Si junctions by in situ annealing
D Cooper, AC Twitchett, PK Somodi, PA Midgley, RE Dunin-Borkowski, ...
Applied physics letters 88 (6), 063510, 2006
612006
Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution
D Cooper, JP Barnes, JM Hartmann, A Béché, JL Rouviere
Applied Physics Letters 95 (5), 053501, 2009
602009
Vertically stacked-nanowires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain
S Barraud, V Lapras, MP Samson, L Gaben, L Grenouillet, ...
2016 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2016
582016
3D analysis of advanced nano-devices using electron and atom probe tomography
A Grenier, S Duguay, JP Barnes, R Serra, G Haberfehlner, D Cooper, ...
Ultramicroscopy 136, 185-192, 2014
582014
Dopant profiling of focused ion beam milled semiconductors using off-axis electron holography; reducing artifacts, extending detection limits and reducing the effects of …
D Cooper, C Ailliot, JP Barnes, JM Hartmann, P Salles, G Benassayag, ...
Ultramicroscopy 110 (5), 383-389, 2010
582010
Dark field electron holography for strain measurement
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 111 (3), 227-238, 2011
542011
Growth and structural properties of step-graded, high Sn content GeSn layers on Ge
J Aubin, JM Hartmann, A Gassenq, JL Rouviere, E Robin, V Delaye, ...
Semiconductor Science and Technology 32 (9), 094006, 2017
482017
Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
C Nail, G Molas, P Blaise, G Piccolboni, B Sklenard, C Cagli, M Bernard, ...
2016 IEEE International Electron Devices Meeting (IEDM), 4.5. 1-4.5. 4, 2016
482016
Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière
Applied Physics Letters 96 (11), 113508, 2010
462010
Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution
D Cooper, A Béché, JM Hartmann, V Carron, JL Rouvière
Semiconductor science and technology 25 (9), 095012, 2010
412010
Three dimensional imaging and analysis of a single nano-device at the ultimate scale using correlative microscopy techniques
A Grenier, S Duguay, JP Barnes, R Serra, N Rolland, G Audoit, P Morin, ...
Applied Physics Letters 106 (21), 213102, 2015
362015
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