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Guilherme A.S. Ribeiro
Guilherme A.S. Ribeiro
Verified email at fis.grad.ufmg.br
Title
Cited by
Cited by
Year
Strong anharmonicity in the phonon spectra of PbTe and SnTe from first principles
GAS Ribeiro, L Paulatto, R Bianco, I Errea, F Mauri, M Calandra
Physical Review B 97 (1), 014306, 2018
832018
Surface structure of BiSe(111) determined by low-energy electron diffraction and surface x-ray diffraction
DD dos Reis, L Barreto, M Bianchi, GAS Ribeiro, EA Soares, WS e Silva, ...
Physical Review B 88 (4), 041404, 2013
422013
Temperature-Induced Coexistence of a Conducting Bilayer and the Bulk-Terminated Surface of the Topological Insulator Bi2Te3
PM Coelho, GAS Ribeiro, A Malachias, VL Pimentel, WS Silva, DD Reis, ...
Nano letters 13 (9), 4517-4521, 2013
402013
Origin of the complex Raman tensor elements in single-layer triclinic ReSe2
GC Resende, GAS Ribeiro, OJ Silveira, JS Lemos, JC Brant, D Rhodes, ...
2D Materials 8 (2), 025002, 2020
152020
Bi2: Bi2Te3 stacking influence on the surface electronic response of the topological insulator Bi4Te3
T Chagas, GAS Ribeiro, PHR Gonçalves, L Calil, WS Silva, Â Malachias, ...
Electronic Structure 2 (1), 015002, 2020
102020
Multiple strong topological gaps and hexagonal warping in
T Chagas, OA Ashour, GAS Ribeiro, WS Silva, Z Li, SG Louie, ...
Physical Review B 105 (8), L081409, 2022
72022
Direct observation of large strain through van der Waals gaps on epitaxial B i 2 T e 3/graphite: Pseudomorphic relaxation and the role of B i 2 layers on the B i x T e y …
G Rodrigues-Junior, LAB Marçal, GAS Ribeiro, PH de Oliveira Rappl, ...
Physical Review Materials 4 (2), 023602, 2020
52020
A combined LEED and DFT surface structure determination of Cu3Au (001): Evidence of a surface stacking fault
AAC Cotta, DVP Massote, GAS Ribeiro, GCS Valadares, RB Capaz, ...
Surface science 618, 167-172, 2013
52013
Effects of dimensionality and excitation energy on the Raman tensors of triclinic ReSe2
GC Resende, GAS Ribeiro, OJ Silveira, JS Lemos, D Rhodes, L Balicas, ...
Journal of Raman Spectroscopy, 2021
42021
Electronic gap stability of two-dimensional tin monosulfide phases: Towards optimal structures for electronic device applications
TC Ribeiro, R Reis, DC Ferreira, DR Miquita, GAS Ribeiro, MSC Mazzoni, ...
Applied Surface Science 591, 153153, 2022
32022
Activation of topological insulator phase in kagomé-type bilayers by interlayer coupling: The cases of Ni (CO) 4 and Pd (CO) 4
OJ Silveira, GAS Ribeiro, H Chacham
Applied Physics Letters 116 (10), 2020
32020
Estudo por primeiros princípios das propriedades estruturais e eletrônicas dos compostos Bi2Te3 e Bi2Se3
GAS Ribeiro
Universidade Federal de Minas Gerais, 2013
12013
Vibrational and electronic properties of Na 2 Ti 6 O 13
GAS Ribeiro, K Balzuweit, JL Bantignies, RL Moreira, A Righi
Journal of Raman Spectroscopy 54 (5), 551-561, 2023
2023
Electron-phonon processes in low symmetry 2Dmaterials investigated by polarized and resonance Raman spectroscopy
M Pimenta, L Balicas, M Terrones, D Rhodes, O Silveira, M SC Mazzoni, ...
APS March Meeting Abstracts 2023, S21. 013, 2023
2023
Mg-doped GaAs nanowires with enhanced surface alloying for use as ohmic contacts in nanoelectronic devices
T Chagas, GAS Ribeiro, BLT Rosa, D Bahrami, A Davtyan, RR Barreto, ...
ACS Applied Nano Materials 4 (11), 12640-12649, 2021
2021
Strong anharmonicity in the phonon spectra of PbTe and SnTe evaluated via the stochastic self-consistent harmonic approximation.
GAS Ribeiro
Université Pierre et Marie Curie-Paris VI, 2017
2017
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