| Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ... Advanced Materials 33 (21), 2008709, 2021 | 81 | 2021 |
| Committee machines—a universal method to deal with non-idealities in memristor-based neural networks D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ... Nature communications 11 (1), 4273, 2020 | 75 | 2020 |
| Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (11), 1652-1655, 2018 | 49 | 2018 |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019 | 30 | 2019 |
| Evidence of filamentary switching and relaxation mechanisms in GexSe1-xOTS selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... 2019 Symposium on VLSI Technology, T238-T239, 2019 | 30 | 2019 |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters 40 (8), 1269-1272, 2019 | 29 | 2019 |
| RTN-based defect tracking technique: Experimentally probing the spatial and energy profile of the critical filament region and its correlation with HfO2RRAM … Z Chai, J Ma, W Zhang, B Govoreanu, E Simoen, JF Zhang, Z Ji, R Gao, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 26 | 2016 |
| Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement J Ma, Z Chai, W Zhang, B Govoreanu, JF Zhang, Z Ji, B Benbakhti, ... 2016 IEEE International Electron Devices Meeting (IEDM), 21.4. 1-21.4. 4, 2016 | 21 | 2016 |
| GeSe-based ovonic threshold switching volatile true random number generator Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ... IEEE Electron Device Letters 41 (2), 228-231, 2019 | 19 | 2019 |
| Combined effects of hydrogen annealing on morphological, electrical and structural properties of graphene/r-sapphire J Ning, D Wang, J Yan, D Han, Z Chai, W Cai, J Zhang, Y Hao Carbon 75, 262-270, 2014 | 19 | 2014 |
| The Over-Reset Phenomenon in Ta2O5RRAM Device Investigated by the RTN-Based Defect Probing Technique Z Chai, W Zhang, P Freitas, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (7), 955-958, 2018 | 18 | 2018 |
| High-resolution time-to-digital converters implemented on 40-, 28-, and 20-nm FPGAs M Zhang, K Yang, Z Chai, H Wang, Z Ding, W Bao IEEE Transactions on Instrumentation and Measurement 70, 1-10, 2020 | 16 | 2020 |
| Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2RRAM and Their Impacts on RTN Amplitude Distribution J Ma, Z Chai, WD Zhang, JF Zhang, Z Ji, B Benbakhti, B Govoreanu, ... IEEE Transactions on Electron Devices 65 (3), 970-977, 2018 | 16 | 2018 |
| Effects of the flow rate of hydrogen on the growth of graphene Y Shi, Y Hao, D Wang, J Zhang, P Zhang, X Shi, D Han, Z Chai, J Yan International Journal of Minerals, Metallurgy, and Materials 22, 102-110, 2015 | 16 | 2015 |
| Probing the Critical Region of Conductive Filament in Nanoscale HfO2 Resistive-Switching Device by Random Telegraph Signals Z Chai, J Ma, WD Zhang, B Govoreanu, JF Zhang, Z Ji, M Jurczak IEEE Transactions on Electron Devices 64 (10), 4099-4105, 2017 | 15 | 2017 |
| Cycling induced metastable degradation in GeSe Ovonic threshold switching selector Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ... IEEE Electron Device Letters 42 (10), 1448-1451, 2021 | 11 | 2021 |
| TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device J Ma, Z Chai, WD Zhang, JF Zhang, J Marsland, B Govoreanu, ... IEEE Transactions on Electron Devices 66 (1), 777-784, 2018 | 10 | 2018 |
| Random telegraph signal noise in advanced high performance and memory devices C Claeys, MGC De Andrade, Z Chai, W Fang, B Govoreanu, B Kaczer, ... 2016 31st Symposium on Microelectronics Technology and Devices (SBMicro), 1-6, 2016 | 10 | 2016 |
| Impact of relaxation on the performance of GeSe true random number generator based on ovonic threshold switching X Zhou, Z Hu, Z Chai, W Zhang, S Clima, R Degraeve, JF Zhang, A Fantini, ... IEEE Electron Device Letters 43 (7), 1061-1064, 2022 | 7 | 2022 |
| Synaptic 1/f noise injection for overfitting suppression in hardware neural networks Y Du, W Shao, Z Chai, H Zhao, Q Diao, Y Gao, X Yuan, Q Wang, T Li, ... Neuromorphic Computing and Engineering 2 (3), 034006, 2022 | 5 | 2022 |
Wei Dong ZhangProfessor of Nanoelectronics, Liverpool John Moores UniversityΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ljmu.ac.uk
