Effect of ion species on the accumulation of ion-beam damage in GaN SO Kucheyev, JS Williams, C Jagadish, J Zou, G Li, AI Titov Physical Review B 64 (3), 035202, 2001 | 130 | 2001 |
Energy spike effects in ion-bombarded GaN SO Kucheyev, AY Azarov, AI Titov, PA Karaseov, TM Kuchumova Journal of Physics D: Applied Physics 42 (8), 085309, 2009 | 51 | 2009 |
Effect of the density of collision cascades on ion implantation damage in ZnO AY Azarov, SO Kucheyev, AI Titov, PA Karaseov Journal of Applied Physics 102 (8), 2007 | 50 | 2007 |
Defect accumulation during room temperature N+ irradiation of silicon AI Titov, G Carter Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 48 | 1996 |
Phonons in hexagonal InN. Experiment and theory VY Davydov, AA Klochikhin, MB Smirnov, VV Emtsev, VD Petrikov, ... physica status solidi (b) 216 (1), 779-783, 1999 | 46 | 1999 |
Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions AI Titov, SO Kucheyev, VS Belyakov, AY Azarov Journal of Applied Physics 90 (8), 3867-3872, 2001 | 42 | 2001 |
Mechanism for the molecular effect in Si bombarded with clusters of light atoms AI Titov, AY Azarov, LM Nikulina, SO Kucheyev Physical Review B 73 (6), 064111, 2006 | 41 | 2006 |
Formation of surface amorphous layers in semiconductors under low-energy light-ion irradiation: Experiment and theory AI Titov, VS Belyakov, AY Azarov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2003 | 38 | 2003 |
Effect of the density of collision cascades on implantation damage in GaN SO Kucheyev, JS Williams, AI Titov, G Li, C Jagadish Applied Physics Letters 78 (18), 2694-2696, 2001 | 38 | 2001 |
Model for electrical isolation of GaN by light-ion bombardment AI Titov, SO Kucheyev Journal of applied physics 92 (10), 5740-5744, 2002 | 30 | 2002 |
Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approach AI Titov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 30 | 2000 |
Damage accumulation in Si during N+ and N2+ bombardment along random and channeling directions AI Titov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999 | 28 | 1999 |
The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductors NAG Ahmed, CE Christodoulides, G Carter, MJ Nobes, AI Titov Nuclear Instruments and Methods 168 (1-3), 283-288, 1980 | 28 | 1980 |
Structural damage in ZnO bombarded by heavy ions AY Azarov, AI Titov, PA Karaseov, SO Kucheyev, A Hallén, AY Kuznetsov, ... Vacuum 84 (8), 1058-1061, 2010 | 26 | 2010 |
Physical Foundations of Electron-and Ion-Beam Technology IA Abroyan, AN Andronov, AI Titov Vysshaya Shkola, Moscow, 1984 | 26 | 1984 |
Effect of ion species on implantation-produced disorder in GaN at liquid nitrogen temperature SO Kucheyev, JS Williams, J Zou, G Li, C Jagadish, AI Titov Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 25 | 2002 |
Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN MW Ullah, A Kuronen, K Nordlund, F Djurabekova, PA Karaseov, AI Titov Journal of Applied Physics 112 (4), 2012 | 24 | 2012 |
Damage buildup and the molecular effect in Si bombarded with PFn cluster ions AI Titov, AY Azarov, LM Nikulina, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 24 | 2007 |
Molecular effect in semiconductors under heavy-ion bombardment: Quantitative approach based on the concept of nonlinear displacement spikes AI Titov, VS Belyakov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002 | 24 | 2002 |
Model for radiation damage buildup in GaN AI Titov, PA Karaseov, AY Kataev, AY Azarov, SO Kucheyev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2012 | 23 | 2012 |