| CASINO V2. 42—a fast and easy‐to‐use modeling tool for scanning electron microscopy and microanalysis users D Drouin, AR Couture, D Joly, X Tastet, V Aimez, R Gauvin Scanning: The Journal of Scanning Microscopies 29 (3), 92-101, 2007 | 1833 | 2007 |
| CASINO: A new Monte Carlo code in C language for electron beam interaction—Part I: Description of the program P Hovington, D Drouin, R Gauvin Scanning 19 (1), 1-14, 1997 | 869 | 1997 |
| Three‐dimensional electron microscopy simulation with the CASINO Monte Carlo software H Demers, N Poirier‐Demers, AR Couture, D Joly, M Guilmain, ... Scanning 33 (3), 135-146, 2011 | 422 | 2011 |
| CASINO: A new monte carlo code in C language for electron beam interactions—part II: Tabulated values of the mott cross section D Drouin, P Hovington, R Gauvin Scanning 19 (1), 20-28, 1997 | 259 | 1997 |
| CASINO: a new Monte Carlo code in C language for electron beam interactions—part III: stopping power at low energies P Hovington, D Drouin, R Gauvin, DC Joy, N Evans Scanning 19 (1), 29-35, 1997 | 200 | 1997 |
| Nanometer-resolution electron microscopy through micrometers-thick water layers N de Jonge, N Poirier-Demers, H Demers, DB Peckys, D Drouin Ultramicroscopy 110 (9), 1114-1119, 2010 | 184 | 2010 |
| In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives A Amirsoleimani, F Alibart, V Yon, J Xu, MR Pazhouhandeh, S Ecoffey, ... Advanced Intelligent Systems 2 (11), 2000115, 2020 | 183 | 2020 |
| Cryogenic temperature characterization of a 28-nm FD-SOI dedicated structure for advanced CMOS and quantum technologies co-integration P Galy, JC Lemyre, P Lemieux, F Arnaud, D Drouin, M Pioro-Ladriere IEEE Journal of the Electron Devices Society 6, 594-600, 2018 | 97 | 2018 |
| A nanodamascene process for advanced single-electron transistor fabrication C Dubuc, J Beauvais, D Drouin IEEE transactions on nanotechnology 7 (1), 68-73, 2008 | 86 | 2008 |
| Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence N Pauc, MR Phillips, V Aimez, D Drouin Applied physics letters 89 (16), 2006 | 80 | 2006 |
| Quantification of spherical inclusions in the scanning electron microscope using Monte Carlo simulations R Gauvin, P Hovington, D Drouin Scanning 17 (4), 202-219, 1995 | 77 | 1995 |
| Uprooting defects to enable high-performance III–V optoelectronic devices on silicon YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ... Nature communications 10 (1), 4322, 2019 | 69 | 2019 |
| Space-charge limited transport in large-area monolayer hexagonal boron nitride F Mahvash, E Paradis, D Drouin, T Szkopek, M Siaj Nano letters 15 (4), 2263-2268, 2015 | 63 | 2015 |
| Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching YA Bioud, A Boucherif, A Belarouci, E Paradis, S Fafard, V Aimez, ... Electrochimica Acta 232, 422-430, 2017 | 55 | 2017 |
| Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs YA Bioud, A Boucherif, A Belarouci, E Paradis, D Drouin, R Arès Nanoscale research letters 11, 1-8, 2016 | 54 | 2016 |
| Sol–gel Pechini synthesis and optical spectroscopy of nanocrystalline La2O3 doped with Eu3+ M Méndez, JJ Carvajal, Y Cesteros, M Aguiló, F Díaz, A Giguère, ... Optical Materials 32 (12), 1686-1692, 2010 | 54 | 2010 |
| A formula to compute total elastic Mott cross‐sections R Gauvin, D Drouin Scanning 15 (3), 140-150, 1993 | 49 | 1993 |
| Room Temperature Single-Electron Transistor Featuring Gate-Enhanced on -State Current A Beaumont, C Dubuc, J Beauvais, D Drouin IEEE electron device letters 30 (7), 766-768, 2009 | 48 | 2009 |
| Simulating STEM imaging of nanoparticles in micrometers-thick substrates H Demers, N Poirier-Demers, D Drouin, N De Jonge Microscopy and microanalysis 16 (6), 795-804, 2010 | 43 | 2010 |
| Simulation and design methodology for hybrid SET-CMOS integrated logic at 22-nm room-temperature operation R Parekh, A Beaumont, J Beauvais, D Drouin IEEE transactions on electron devices 59 (4), 918-923, 2012 | 36 | 2012 |
Serge EcoffeyUniversité de SherbrookeAdresse e-mail validée de usherbrooke.ca
