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Andrew Ngo
Andrew Ngo
Scientist of Institute of Materials Research and Engineering (IMRE), A*STAR
Verified email at imre.a-star.edu.sg
Title
Cited by
Cited by
Year
Effects of size and shape on electronic states of quantum dots
CY Ngo, SF Yoon, WJ Fan, SJ Chua
Physical Review B 74 (24), 245331, 2006
1372006
Direct optical tuning of the terahertz plasmonic response of InSb subwavelength gratings
L Deng, J Teng, H Liu, QY Wu, J Tang, X Zhang, SA Maier, KP Lim, ...
Advanced Optical Materials 1 (2), 128-132, 2013
872013
Broadband terahertz plasmonic response of touching InSb disks
SM Hanham, AI Fernández‐Domínguez, JH Teng, SS Ang, KP Lim, ...
Advanced Materials 24 (35), OP226-OP230, 2012
812012
Rate Equations for 1.3-m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers
CZ Tong, SF Yoon, CY Ngo, CY Liu, WK Loke
IEEE journal of quantum electronics 42 (11), 1175-1183, 2006
712006
Tuning InAs quantum dots for high areal density and wideband emission
CY Ngo, SF Yoon, WJ Fan, SJ Chua
Applied physics letters 90 (11), 2007
322007
Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
Q Cao, SF Yoon, CY Liu, CY Ngo
Nanoscale Research Letters 2, 303-307, 2007
312007
An investigation of growth temperature on the surface morphology and optical properties of 1.3 µm InAs/InGaAs/GaAs quantum dot structures
CY Ngo, SF Yoon, CZ Tong, WK Loke, SJ Chua
Nanotechnology 18 (36), 365708, 2007
272007
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
QQ Cao, SF Yoon, CZ Tong, CY Ngo, CY Liu, RR Wang, HH Zhao
Applied Physics Letters 95 (19), 191101-191101-3, 2009
262009
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
QQ Cao, SF Yoon, CZ Tong, CY Ngo, CY Liu, RR Wang, HH Zhao
Applied Physics Letters 95 (19), 191101-191101-3, 2009
262009
Temperature-dependent photoluminescence study of 1.3 μm undoped InAs/InGaAs/GaAs quantum dots
CY Ngo, SF Yoon, DR Lim, V Wong, SJ Chua
Applied Physics Letters 93 (4), 041912-041912-3, 2008
182008
Investigation of semiconductor quantum dots for waveguide electroabsorption modulator
CY Ngo, SF Yoon, WK Loke, Q Cao, DR Lim, V Wong, YK Sim, SJ Chua
Nanoscale research letters 3, 486-490, 2008
162008
Low energy Ar+ sputtering-induced GaAs quantum dot formation and evolution
Y Wang, SF Yoon, CY Ngo, CZ Tong, CY Liu
Journal of Applied Physics 106 (2), 2009
152009
Structural and optical properties of stacked self-assembled InAs/InGaAs quantum dots on graded Si 1-x Ge x/Si substrate
H Tanoto, SF Yoon, CY Ngo, WK Loke, C Dohrman, EA Fitzgerald, ...
Applied Physics Letters 92 (21), 213115-213115-3, 2008
152008
Surface morphology evolution of GaAs by low energy ion sputtering
Y Wang, SF Yoon, CY Ngo, J Ahn
Nanoscale Research Letters 2, 504-508, 2007
142007
Effect of thermal annealing on properties of InSbN grown by molecular beam epitaxy
KP Lim, HT Pham, SF Yoon, CY Ngo, S Tripathy
Applied Physics Letters 96 (16), 2010
132010
Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator
CY Ngo, SF Yoon, WK Loke, QQ Cao, DR Lim, V Wong, YK Sim, SJ Chua
Applied Physics Letters 94 (14), 143108-143108-3, 2009
132009
Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator
CY Ngo, SF Yoon, WK Loke, QQ Cao, DR Lim, V Wong, YK Sim, SJ Chua
Applied Physics Letters 94 (14), 143108-143108-3, 2009
132009
Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures
CY Ngo, SF Yoon, WK Loke, TK Ng, SJ Chua
Journal of crystal growth 311 (7), 1885-1888, 2009
132009
Electroabsorption Characteristics of Single-Mode 1.3-m InAs–InGaAs–GaAs Ten-Layer Quantum-Dot Waveguide
CY Ngo, SF Yoon, SY Lee, HX Zhao, R Wang, DR Lim, V Wong, SJ Chua
IEEE Photonics Technology Letters 22 (23), 1717-1719, 2010
102010
InSb1− xNx/InSb/gaas alloys by thermal annealing for midinfrared photodetection
KP Lim, HT Pham, SF Yoon, KH Tan, CY Ngo
Applied Physics Letters 97 (22), 2010
92010
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