Dr. Androula Nassiopoulou
Dr. Androula Nassiopoulou
Director of Research, NCSR Demokritos, Institute of nanoscience &Nanotechnology
Verified email at inn.demokritos.gr
Cited by
Cited by
Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin layers
P Photopoulos, AG Nassiopoulou
Applied Physics Letters 77 (12), 1816-1818, 2000
Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation
G Kaltsas, AG Nassiopoulou
Sensors and Actuators A: Physical 76 (1-3), 133-138, 1999
Charging effects in silicon nanocrystals within layers, fabricated by chemical vapor deposition, oxidation, and annealing
DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou
Applied physics letters 82 (3), 397-399, 2003
Photoluminescence from nanocrystalline silicon in superlattices
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Applied Physics Letters 76 (24), 3588-3590, 2000
Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parameters
A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ...
Journal of Applied Physics 92 (1), 426-431, 2002
Thermal properties of suspended porous silicon micro-hotplates for sensor applications
C Tsamis, AG Nassiopoulou, A Tserepi
Sensors and Actuators B: Chemical 95 (1-3), 78-82, 2003
Frontside bulk silicon micromachining using porous-silicon technology
G Kaltsas, AG Nassiopoulou
Sensors and Actuators A: Physical 65 (2-3), 175-179, 1998
Characterization of a silicon thermal gas-flow sensor with porous silicon thermal isolation
G Kaltsas, AA Nassiopoulos, AG Nassiopoulou
IEEE Sensors Journal 2 (5), 463-475, 2002
Porous silicon as an effective material for thermal isolation on bulk crystalline silicon
AG Nassiopoulou, G Kaltsas
physica status solidi (a) 182 (1), 307-311, 2000
Fundamental transport processes in ensembles of silicon quantum dots
I Balberg, E Savir, J Jedrzejewski, AG Nassiopoulou, S Gardelis
Physical review B 75 (23), 235329, 2007
Ultra-thin porous anodic alumina films with self-ordered cylindrical vertical pores on a p-type silicon substrate
M Kokonou, AG Nassiopoulou, KP Giannakopoulos
Nanotechnology 16 (1), 103, 2004
Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics
AG Nassiopoulou, V Gianneta, C Katsogridakis
Nanoscale research letters 6 (1), 1-8, 2011
Stable Visible Photo‐ and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO2 Layers by Low Pressure Chemical Vapour …
AG Nassiopoulou, V Ioannou‐Sougleridis, P Photopoulos, A Travlos, ...
physica status solidi (a) 165 (1), 79-85, 1998
Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels
E Lioudakis, A Othonos, AG Nassiopoulou
Applied physics letters 90 (17), 171103, 2007
Fabrication and testing of an integrated thermal flow sensor employing thermal isolation by a porous silicon membrane over an air cavity
DN Pagonis, G Kaltsas, AG Nassiopoulou
Journal of micromechanics and microengineering 14 (6), 793, 2004
Photo-and electroluminescence from nanocrystalline silicon single and multilayer structures
P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos
Materials Science and Engineering: B 69, 345-349, 2000
Self-trapped excitons in silicon nanocrystals with sizes below 1.5 nm in multilayers
BV Kamenev, AG Nassiopoulou
Journal of Applied Physics 90 (11), 5735-5740, 2001
Silicon nanocrystals in SiO2 thin layers
AG Nassiopoulou
Encyclopedia of Nanoscience and Nanotechnology. Edited by: Nalwa HS …, 2004
Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology
G Kaltsas, DN Pagonis, AG Nassiopoulou
Journal of microelectromechanical systems 12 (6), 863-872, 2003
Investigation of charging phenomena in silicon nanocrystal metal–oxide–semiconductor capacitors using ramp current–voltage measurements
V Ioannou-Sougleridis, AG Nassiopoulou
Journal of applied physics 94 (6), 4084-4087, 2003
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