Dr. Androula Nassiopoulou

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Vassilios Ioannou-SougleridisResearcher NCSR DemokritosVerified email at inn.demokritos.gr
emmanouel hourdakisINN, NCSR DemokritosVerified email at inn.demokritos.gr
Spiros GardelisAssociate Professor, Department of Physics,National and Kapodistrian University of Athens, GreeceVerified email at phys.uoa.gr
Christos TsamisNCSR Demokritos -Verified email at inn.demokritos.gr
Panagiotis SarafisInstitute of Nanoscience and Nanotechnology, NCSR DemokritosVerified email at imel.demokritos.gr
Panos PhotopoulosUniversity of West AtticaVerified email at uniwa.gr
Andreas OthonosProfessor of Physics, University of CyprusVerified email at ucy.ac.cy
Dimitrios - Nikolaos PagonisUniversity of West AtticaVerified email at uniwa.gr
Stavroula GeorgaDepartment of Physics, University of PatrasVerified email at physics.upatras.gr
Angeliki TserepiNCSR DemokritosVerified email at inn.demokritos.gr
Konstantinos P. GiannakopoulosNCSR DemokritosVerified email at imel.demokritos.gr
katerina valalakiNCSR Demokritos / INNVerified email at inn.demokritos.gr
Evangelos GogolidesDirector of Research, Institute of Nanoscience and Nanotechnology, NCSR "Demokritos"Verified email at inn.demokritos.gr
Pavlos P. ManousiadisSchool of Physics & Astronomy, University of St AndrewsVerified email at st-andrews.ac.uk
Ioannis TsiaoussisAristotle University ThessalonikiVerified email at auth.gr
Hamza IssaAssociate Professor, Electrical Engineering Dept, American University of the Middle EastVerified email at aum.edu.kw
Philippe Ferrariprofesseur Université Grenoble-AlpesVerified email at univ-grenoble-alpes.fr
Peter PetrikEK MFA, University of DebrecenVerified email at mfa.kfki.hu
Panagiota K. KarahaliouDepartment of Physics, University of Patras, GreeceVerified email at upatras.gr
silvia militaCNR-IMMVerified email at bo.imm.cnr.it

Dr. Androula Nassiopoulou

Director of Research, NCSR Demokritos, Institute of nanoscience &Nanotechnology

Verified email at inn.demokritos.gr

Microelectronics Nanoscience Nanotechnology


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Novel C-MOS compatible monolithic silicon gas flow sensor with porous silicon thermal isolation G Kaltsas, AG Nassiopoulou Sensors and Actuators A: Physical 76 (1-3), 133-138, 1999	166	1999
Room- and low-temperature voltage tunable electroluminescence from a single layer of silicon quantum dots in between two thin layers P Photopoulos, AG Nassiopoulou Applied Physics Letters 77 (12), 1816-1818, 2000	148	2000
Charging effects in silicon nanocrystals within layers, fabricated by chemical vapor deposition, oxidation, and annealing DN Kouvatsos, V Ioannou-Sougleridis, AG Nassiopoulou Applied physics letters 82 (3), 397-399, 2003	145	2003
Structural and electrical quality of the high-k dielectric on Si (001): Dependence on growth parameters A Dimoulas, G Vellianitis, A Travlos, V Ioannou-Sougleridis, ... Journal of Applied Physics 92 (1), 426-431, 2002	136	2002
Thermal properties of suspended porous silicon micro-hotplates for sensor applications C Tsamis, AG Nassiopoulou, A Tserepi Sensors and Actuators B: Chemical 95 (1-3), 78-82, 2003	135	2003
Photoluminescence from nanocrystalline silicon in superlattices P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos Applied Physics Letters 76 (24), 3588-3590, 2000	133	2000
Frontside bulk silicon micromachining using porous-silicon technology G Kaltsas, AG Nassiopoulou Sensors and Actuators A: Physical 65 (2-3), 175-179, 1998	94	1998
Characterization of a silicon thermal gas-flow sensor with porous silicon thermal isolation G Kaltsas, AA Nassiopoulos, AG Nassiopoulou IEEE Sensors Journal 2 (5), 463-475, 2002	82	2002
Porous silicon as an effective material for thermal isolation on bulk crystalline silicon AG Nassiopoulou, G Kaltsas physica status solidi (a) 182 (1), 307-311, 2000	74	2000
Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics AG Nassiopoulou, V Gianneta, C Katsogridakis Nanoscale research letters 6, 1-8, 2011	73	2011
Fundamental transport processes in ensembles of silicon quantum dots I Balberg, E Savir, J Jedrzejewski, AG Nassiopoulou, S Gardelis Physical review B 75 (23), 235329, 2007	70	2007
Ultra-thin porous anodic alumina films with self-ordered cylindrical vertical pores on a p-type silicon substrate M Kokonou, AG Nassiopoulou, KP Giannakopoulos Nanotechnology 16 (1), 103, 2004	62	2004
Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz P Sarafis, AG Nassiopoulou Nanoscale research letters 9, 1-8, 2014	55	2014
Ultrafast transient photoinduced absorption in silicon nanocrystals: Coupling of oxygen-related states to quantized sublevels E Lioudakis, A Othonos, AG Nassiopoulou Applied physics letters 90 (17), 2007	54	2007
Fabrication and testing of an integrated thermal flow sensor employing thermal isolation by a porous silicon membrane over an air cavity DN Pagonis, G Kaltsas, AG Nassiopoulou Journal of micromechanics and microengineering 14 (6), 793, 2004	52	2004
Stable Visible Photo‐ and Electroluminescence from Nanocrystalline Silicon Thin Films Fabricated on Thin SiO₂ Layers by Low Pressure Chemical Vapour … AG Nassiopoulou, V Ioannou‐Sougleridis, P Photopoulos, A Travlos, ... physica status solidi (a) 165 (1), 79-85, 1998	52	1998
High Seebeck coefficient of porous silicon: study of the porosity dependence K Valalaki, P Benech, A Galiouna Nassiopoulou Nanoscale research letters 11, 1-8, 2016	48	2016
Planar CMOS compatible process for the fabrication of buried microchannels in silicon, using porous-silicon technology G Kaltsas, DN Pagonis, AG Nassiopoulou Journal of microelectromechanical systems 12 (6), 863-872, 2003	48	2003
Dielectric permittivity of porous Si for use as substrate material in Si-integrated RF devices P Sarafis, E Hourdakis, AG Nassiopoulou IEEE transactions on electron Devices 60 (4), 1436-1443, 2013	47	2013
Photo-and electroluminescence from nanocrystalline silicon single and multilayer structures P Photopoulos, AG Nassiopoulou, DN Kouvatsos, A Travlos Materials Science and Engineering: B 69, 345-349, 2000	46	2000

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