George Patsis
George Patsis
Department of Electrical and Electronics Engineering, University of West Attica
Verified email at uniwa.gr
Title
Cited by
Cited by
Year
Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors
V Constantoudis, GP Patsis, A Tserepi, E Gogolides
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
1412003
Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions
V Constantoudis, GP Patsis, LHA Leunissen, E Gogolides
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
1212004
Nanofabrication: techniques and principles
M Stepanova, S Dew
Springer Science & Business Media, 2011
1052011
A review of line edge roughness and surface nanotexture resulting from patterning processes
E Gogolides, V Constantoudis, GP Patsis, A Tserepi
Microelectronic Engineering 83 (4-9), 1067-1072, 2006
1022006
Quantification of line-edge roughness of photoresists. I. A comparison between off-line and on-line analysis of top-down scanning electron microscopy images
GP Patsis, V Constantoudis, A Tserepi, E Gogolides, G Grozev
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
962003
Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations
GP Patsis, V Constantoudis, E Gogolides
Microelectronic engineering 75 (3), 297-308, 2004
592004
Photoresist line-edge roughness analysis using scaling concepts
V Constantoudis, GP Patsis, E Gogolides
Journal of Micro/Nanolithography, MEMS, and MOEMS 3 (3), 429-435, 2004
512004
Line edge roughness: experimental results related to a two-parameter model
LHA Leunissen, WG Lawrence, M Ercken
Microelectronic engineering 73, 265-270, 2004
482004
Etching behavior of Si-containing polymers as resist materials for bilayer lithography: The case of poly-dimethyl siloxane
A Tserepi, G Cordoyiannis, GP Patsis, V Constantoudis, E Gogolides, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
342003
Roughness analysis of lithographically produced nanostructures: off-line measurement and scaling analysis
GP Patsis, V Constantoudis, A Tserepi, E Gogolides, G Grozev, ...
Microelectronic engineering 67, 319-325, 2003
332003
Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists
M Ercken, LHA Leunissen, I Pollentier, GP Patsis, V Constantoudis, ...
Metrology, Inspection, and Process Control for Microlithography XVIII 5375 …, 2004
312004
Stochastic simulation studies of molecular resists
D Drygiannakis, GP Patsis, I Raptis, D Niakoula, V Vidali, E Couladouros, ...
Microelectronic engineering 84 (5-8), 1062-1065, 2007
302007
Characterization and simulation of surface and line-edge roughness in photoresists
V Constantoudis, E Gogolides, GP Patsis, A Tserepi, ES Valamontes
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
292001
Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation
GP Patsis, A Tserepi, I Raptis, N Glezos, E Gogolides, ES Valamontes
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
282000
Material and process effects on line-edge-roughness of photoresists probed with a fast stochastic lithography simulator
GP Patsis, E Gogolides
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
272005
Toward a complete description of linewidth roughness: a comparison of different methods for vertical and spatial LER and LWR analysis and CD variation
V Constantoudis, GP Patsis, LHA Leunissen, E Gogolides
Metrology, Inspection, and Process Control for Microlithography XVIII 5375 …, 2004
272004
Photoresist line-edge roughness analysis using scaling concepts
V Constantoudis, GP Patsis, E Gogolides
Metrology, Inspection, and Process Control for Microlithography XVII 5038 …, 2003
272003
Effects of model polymer chain architectures and molecular weight of conventional and chemically amplified photoresists on line-edge roughness. Stochastic simulations
GP Patsis, E Gogolides
Microelectronic engineering 83 (4-9), 1078-1081, 2006
262006
Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parameters
N Glezos, GP Patsis, I Raptis, P Argitis, M Gentili, L Grella
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
261996
Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results
V Constantoudis, G Kokkoris, P Xydi, E Gogolides, E Pargon, M Martin
Journal of Micro/Nanolithography, MEMS, and MOEMS 8 (4), 043004, 2009
252009
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