| Characterization of InSbBi bulk crystals grown at various growth-rates by vertical directional solidification (VDS) DS Maske, PS More, MD Deshpande, R Choudhary, DB Gadkari Arch. Phys. Res. 3, 15-20, 2012 | 13 | 2012 |
| Study of pn Junction Diodes Fabricated on Dilute Nitride of InSb M Deshpande, D Maske, D Devi, R Choudhari, BM Arora, D Gadkari International Journal of Scientific and Research Publications 5 (8), 434-436, 2015 | 3 | 2015 |
| Lattice constant and hardness of InSb: Bi bulk crystals grown by vertical directional solidification D Maske, M Deshpande, R Choudhary, D Gadkari AIP Conference Proceedings 1728 (1), 2016 | 2 | 2016 |
| Detached/contactless growths, reduced melt convection and its effect on the device grade substrates of Sb-based crystals grown by VDS on earth D Gadkari, D Maske, M Deshpande, BM Arora Internat J of Innovative Research in Sci Engg Techno 5 (2), 2016 | 2 | 2016 |
| Optical Characteristics of Dilute Nitride of InSb Bulk Crystal MJ Deshpande, D Maske, BM Arora, D Gadkari International Journal of Scientific and Research Publications 4 (4), 251-253, 2014 | 2 | 2014 |
| Effect of annealing on electrical characteristics of dilute nitride of indium antimonide M Deshpande, D Maske, R Choudhari, BM Arora, D Gadkari AIP Conference Proceedings 1536 (1), 333-334, 2013 | 2 | 2013 |
| Mapping of Elements and Microstructures in a Crystal D Maske, M Deshpande, V Angane, D Gadkari BP International, 2023 | | 2023 |
| Electrical, Optical, and Structural Stability Over Ten Years for Sb Based III-V Semiconducting Bulk Grown by VDS A Gupta, M Deshpande, D Maske, DB Gadkari ECS Transactions 107 (1), 10663, 2022 | | 2022 |
| Synthesis of GaSb-VDS thin film by electron beam physical vapour deposition and its electro-optical characterization as prerequisite for pn device construction A Gupta, M Deshpande, DB Gadkari, DS Maske Materials Today: Proceedings 57, 2082-2086, 2022 | | 2022 |
| Relation of Heat Transfer with the Growth Rate of InSb based Bulk Crystals Grown by VDS and its Effect on the Crystal Quality D Maske, M Deshpande, D Gadkari Journal of Nano-and Electronic Physics 12 (2), 2020 | | 2020 |
| Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique M Deshpande, D Maske, R Choudhari, BM Arora, D Gadkari AIP Conference Proceedings 1728 (1), 2016 | | 2016 |
| The electrical characterizations of selenium (Se) doped gallium antimony (GaSb) single crystal R Choudhari, M Deshpande, D Maske, D Gadkari AIP Conference Proceedings 1728 (1), 2016 | | 2016 |
| Growth and X ray Characteristics of Dilute Nitride of Indium Antimonide MJ Deshpande, D Maske, B Arora, D Gadkari Archives of Physics Research 4 (6), 33-36, 2013 | | 2013 |
| Development of PN Junction by Tellurium Implantation Ongasb-Vds-Substrate A Gupta, M Deshpande, DB Gadkari, D Maske | | |
| Characterization of InSbBi Bulk Crystal Grown by Vertical Directional Solidification Technique DS Maske1, 2, PS More2, MD Deshpande2, R. Choudhary2, DB Gadkari 2, 3 DS Maske, PS More, MD Deshpande, R Choudhary | | |
| Optical characterization of dilute nitride of InSb bulk crystals grown by vertical directional solidification technique MD Deshpande, D Gadkari | | |
| STUDY OF DILUTE NITROGEN DOPING IN A GROWTH OF InSb BULK CRYSTAL MJ Deshpande, P More, D Maske, R Choudhari | | |
| Microscopic and Elemental Mapping of InSbBi Substrate of Bulk Crystal Grown by VDS D Maske, M Deshpande, V Angane, D Gadkari | | |
| Study of pn Junction Fabricated by Ion Implantation on InSbBi Substrate DS MASKE, M DESHPANDE, DB GADKARI, D DEVI, BM ARORA | | |
| Compositional Analysis of Detached InSb: Bi Bulk Semiconductor Crystal Grown by VDS Technique D Maske, M Deshpande, R Choudhary, D Gadkari | | |
