| High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates S Muhtadi, SM Hwang, A Coleman, F Asif, G Simin, MVS Chandrashekhar, ... IEEE Electron Device Letters 38 (7), 914-917, 2017 | 67 | 2017 |
| Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2Gate-Insulator and Zr-Based Ohmic Contacts X Hu, S Hwang, K Hussain, R Floyd, S Mollah, F Asif, G Simin, A Khan IEEE Electron Device Letters 39 (10), 1568-1571, 2018 | 38 | 2018 |
| High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates S Muhtadi, S Hwang, A Coleman, F Asif, A Lunev, MVS Chandrashekhar, ... Applied Physics Letters 110 (19), 2017 | 32 | 2017 |
| High-speed solar-blind UV photodetectors using high-Al content Al0. 64Ga0. 36N/Al0. 34Ga0. 66N multiple quantum wells S Muhtadi, SM Hwang, AL Coleman, A Lunev, F Asif, VSN Chava, ... Applied Physics Express 10 (1), 011004, 2016 | 28 | 2016 |
| Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes M Lachab, F Asif, B Zhang, I Ahmad, A Heidari, Q Fareed, V Adivarahan, ... Solid-state electronics 89, 156-160, 2013 | 26 | 2013 |
| Selective area deposited n-Al0. 5Ga0. 5N channel field effect transistors with high solar-blind ultraviolet photo-responsivity S Muhtadi, S Hwang, A Coleman, F Asif, A Lunev, MVS Chandrashekhar, ... Applied Physics Letters 110 (17), 2017 | 25 | 2017 |
| Scatterings and Quantum Effects in Heterostructures for High-Power and High-Frequency Electronics L Wang, M Yin, A Khan, S Muhtadi, F Asif, ES Choi, T Datta Physical Review Applied 9 (2), 024006, 2018 | 21 | 2018 |
| Deep ultraviolet photopumped stimulated emission from partially relaxed AlGaN multiple quantum well heterostructures grown on sapphire substrates F Asif, M Lachab, A Coleman, I Ahmad, B Zhang, V Adivarahan, A Khan Journal of Vacuum Science & Technology B 32 (6), 2014 | 18 | 2014 |
| Substrate lifted-off AlGaN/AlGaN lateral conduction thin-film light-emitting diodes operating at 285 nm F Asif, HC Chen, A Coleman, M Lachab, I Ahmad, B Zhang, Q Fareed, ... Japanese Journal of Applied Physics 52 (8S), 08JG14, 2013 | 18 | 2013 |
| Optically-pumped 285 nm edge stimulated emission from AlGaN-based LED structures grown by MOCVD on sapphire substrates M Lachab, F Asif, A Coleman, I Ahmad, B Zhang, V Adivarahan, A Khan Japanese Journal of Applied Physics 53 (11), 112101, 2014 | 14 | 2014 |
| Pseudomorphic AlxGa1‐xN MQW based deep ultraviolet light emitting diodes over sapphire F Asif, HC Chen, A Coleman, I Ahmad, B Zhang, J Dion, A Heidari, ... physica status solidi (c) 11 (3‐4), 798-801, 2014 | 9 | 2014 |
| Pain perception and rate of canine retraction through self-ligating brackets and conventional elastomeric ligation system: a split mouth study I Qamruddin, AG Khan, FM Asif, M Karim, SA Nowrin, F Shahid, MK Alam Pesquisa Brasileira em Odontopediatria e Clínica Integrada 20, e5147, 2020 | 7 | 2020 |
| Demographics of cystic echinococcosis patients treated surgically in Lahore, Pakistan: A single centre study from 2007–2018 Q Rasib, A Khan, H Ahmed, S Nizamuddin, F Asif, MS Afzal, S Simsek, ... Helminthologia 58 (2), 162-172, 2021 | 6 | 2021 |
| Design, Fabrication, and Characterization of Pseudomorphic and Quasi-Pseudomorphic AlGaN Based Deep Ultraviolet Light Emitting Diodes Over Sapphire F Asif University of South Carolina, 2015 | 3 | 2015 |
| Deep ultraviolet light-emitting and laser diodes A Khan, F Asif, S Muhtadi Gallium Nitride Materials and Devices XI 9748, 153-157, 2016 | 2 | 2016 |
| Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures L Wang, M Yin, A Khan, S Muhtadi, F Asif, ES Choi, T Datta arXiv preprint arXiv:1707.07722, 2017 | | 2017 |
| Al0.65Ga0.35N channel high electron mobility transistors on AlN/ sapphire templates S Muhtadi, SM Hwang, A Coleman, F Asif, A Khan 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | | 2017 |
| Measurement of thermal impedance of deep ultraviolet light emitting diodes F Asif University of South Carolina, 2011 | | 2011 |
| A. Gupta, G. Jamieson, JF Gomez Granados, J. Bömmels, CJ Wilson, Z. Tokei, and C. Adelmann 949 S Dutta, GJM Wienk, RJE Hueting, J Schmitz, AJ Annema, W Chen, ... | | |
Mvs ChandrashekharUniversity of South CarolinaVerified email at cec.sc.edu
