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Vilgailė Dagytė
Vilgailė Dagytė
Postdoctoral researcher, Aalto University, Finland
Verified email at aalto.fi
Title
Cited by
Cited by
Year
Absorption and transmission of light in III–V nanowire arrays for tandem solar cell applications
N Anttu, V Dagytė, X Zeng, G Otnes, M Borgström
Nanotechnology 28 (20), 205203, 2017
432017
Modal analysis of resonant and non-resonant optical response in semiconductor nanowire arrays
V Dagytė, N Anttu
Nanotechnology 30 (2), 025710, 2018
242018
Nanobeam X-ray fluorescence dopant mapping reveals dynamics of in situ Zn-doping in nanowires
A Troian, G Otnes, X Zeng, L Chayanun, V Dagyte, S Hammarberg, ...
Nano letters 18 (10), 6461-6468, 2018
232018
Doping evaluation of InP nanowires for tandem junction solar cells
F Lindelöw, M Heurlin, G Otnes, V Dagytė, D Lindgren, O Hultin, K Storm, ...
Nanotechnology 27 (6), 065706, 2016
212016
Growth kinetics of GaxIn (1− x) P nanowires using triethylgallium as Ga precursor
V Dagytė, M Heurlin, X Zeng, MT Borgström
Nanotechnology 29 (39), 394001, 2018
142018
High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction
S Hammarberg, V Dagytė, L Chayanun, MO Hill, A Wyke, A Björling, ...
Nano Research 13, 2460-2468, 2020
122020
Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate
V Dagytė, E Barrigón, W Zhang, X Zeng, M Heurlin, G Otnes, N Anttu, ...
Nanotechnology 28 (50), 505706, 2017
122017
Spectrally resolved x-ray beam induced current in a single InGaP nanowire
L Chayanun, V Dagytė, A Troian, D Salomon, M Borgström, J Wallentin
Nanotechnology 29 (45), 454001, 2018
112018
Electrical and optical evaluation of n-type doping in InxGa (1− x) P nanowires
X Zeng, RT Mourão, G Otnes, O Hultin, V Dagytė, M Heurlin, ...
Nanotechnology 29 (25), 255701, 2018
82018
InP nanowire p-type doping via Zinc indiffusion
T Haggren, G Otnes, R Mourao, V Dagyte, O Hultin, F Lindelöw, ...
Journal of Crystal Growth 451, 18-26, 2016
62016
This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail.
M Ruggenthaler, M Penz, R van Leeuwen
J. Phys.: Condens. Matter 27, 203202, 2015
52015
Improving the efficiency of GaInP/GaAs light emitters using surface passivation
TS Tripathi, I Radevici, V Dagytė, T Sadi, J Oksanen
IEEE Transactions on Electron Devices 67 (9), 3667-3672, 2020
42020
Growth and optical properties of III-V semiconductor nanowires:: Studies relevant for solar cells
V Dagyte
22018
Fast nanoscale imaging of strain in a multi-segment heterostructured nanowire with 2D Bragg ptychography
S Hammarberg, D Dzhigaev, V Dagyte, A Björling, MT Borgström, ...
Journal of Applied Crystallography 57 (1), 2024
2024
Electro-Optical Coupling in Double Diode Structures
N Anttu, V Dagytė, B Behaghel, I Radevici, T Sadi, P Kivisaari, J Oksanen
Physical Review Applied 19 (6), 064054, 2023
2023
GaAsP Nanowire Solar Cell Development Towards Nanowire/Si Tandem Applications
E Barrigon, Y Chen, G Otnes, V Dagyte, N Anttu, L Samuelson, ...
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 2502-2505, 2017
2017
GaAs polytype quantum dots
V Dagyte, A Jönsson, A Troian
2014
Growth and optical properties of III-V semiconductor nanowires
V Dagyte
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Articles 1–18