Flavio Plentz
Flavio Plentz
Verified email at fisica.ufmg.br
Cited by
Cited by
Probing the electronic structure of bilayer graphene by Raman scattering
LM Malard, J Nilsson, DC Elias, JC Brant, F Plentz, ES Alves, AHC Neto, ...
Physical Review B 76 (20), 201401, 2007
Determination of LA and TO phonon dispersion relations of graphene near the Dirac point by double resonance Raman scattering
DL Mafra, G Samsonidze, LM Malard, DC Elias, JC Brant, F Plentz, ...
Physical Review B 76 (23), 233407, 2007
Phonon-assisted excitonic recombination channels observed in DNA-wrapped carbon nanotubes using photoluminescence spectroscopy
SG Chou, F Plentz, J Jiang, R Saito, D Nezich, HB Ribeiro, A Jorio, ...
Physical review letters 94 (12), 127402, 2005
Direct experimental evidence of exciton-phonon bound states in carbon nanotubes
F Plentz, HB Ribeiro, A Jorio, MS Strano, MA Pimenta
Physical review letters 95 (24), 247401, 2005
Thermal enhancement of chemical doping in graphene: a Raman spectroscopy study
LM Malard, RL Moreira, DC Elias, F Plentz, ES Alves, MA Pimenta
Journal of Physics: Condensed Matter 22 (33), 334202, 2010
Hole confinement effects on multiple Si δ doping in GaAs
SM Shibli, LMR Scolfaro, JR Leite, CAC Mendonça, F Plentz, ...
Applied physics letters 60 (23), 2895-2896, 1992
The use of a Ga+ focused ion beam to modify graphene for device applications
BS Archanjo, APM Barboza, BRA Neves, LM Malard, EHM Ferreira, ...
Nanotechnology 23 (25), 255305, 2012
Investigation of the light emission efficiency of single-wall carbon nanotubes wrapped with different surfactants
C Fantini, J Cassimiro, VST Peressinotto, F Plentz, AG Souza Filho, ...
Chemical Physics Letters 473 (1-3), 96-101, 2009
Phonon-assisted exciton relaxation dynamics for a (6, 5)-enriched DNA-wrapped single-walled carbon nanotube sample
SG Chou, MF DeCamp, J Jiang, GG Samsonidze, EB Barros, F Plentz, ...
Physical Review B 72 (19), 195415, 2005
Optical study of porphyrin-doped carbon nanotubes
GAM Sáfar, HB Ribeiro, LM Malard, FO Plentz, C Fantini, AP Santos, ...
Chemical Physics Letters 462 (1-3), 109-111, 2008
Optical studies of carbon nanotubes and nanographites
MA Pimenta, AP Gomes, C Fantini, LG Cançado, PT Araujo, IO Maciel, ...
Physica E: Low-dimensional Systems and Nanostructures 37 (1-2), 88-92, 2007
Spin effects in polarized luminescence at ν= 1
F Plentz, D Heiman, LN Pfeiffer, KW West
Physical Review B 57 (3), 1370, 1998
Electronic properties of bilayer graphene probed by Resonance Raman Scattering
LM Malard, J Nilsson, DL Mafra, DC Elias, JC Brant, F Plentz, ES Alves, ...
physica status solidi (b) 245 (10), 2060-2063, 2008
Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate
JC Brant, J Leon, TC Barbosa, END Araújo, BS Archanjo, F Plentz, ...
Applied Physics Letters 97 (4), 042113, 2010
Characterizing intrinsic charges in top gated bilayer graphene device by Raman spectroscopy
DL Mafra, P Gava, LM Malard, RS Borges, GG Silva, JA Leon, F Plentz, ...
Carbon 50 (10), 3435-3439, 2012
Rapid fabrication of bilayer graphene devices using direct laser writing photolithography
JA Leon, ES Alves, DC Elias, JC Brant, TC Barbosa, LM Malard, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011
Electron-hole separation in a two-dimensional electron system induced by electric fields
F Plentz, D Heiman, A Pinczuk, LN Pfeiffer, KW West
Solid state communications 101 (2), 103-107, 1997
Quantum dot dipole orientation and excitation efficiency of micropillar modes
AG Silva, CA Parra-Murillo, PT Valentim, JSV Morais, F Plentz, ...
Optics express 16 (23), 19201-19207, 2008
Evidence of a two-dimensional to three-dimensional transition in Si δ-doped GaAs structures
CAC Mendonca, F Plentz, JBB Oliveira, EA Meneses, LMR Scolfaro, ...
Physical Review B 48 (16), 12316, 1993
Electronic properties of Si δ-doped GaAs quantum wells
CAC Mendonça, LMR Scolfaro, JBB Oliveira, F Plentz, M Micovic, ...
Superlattices and microstructures 12 (2), 257-260, 1992
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