| AlGaN/AlN/GaN high-power microwave HEMT L Shen, S Heikman, B Moran, R Coffie, NQ Zhang, D Buttari, ... IEEE Electron Device Letters 22 (10), 457-459, 2001 | 596 | 2001 |
| AlGaN/GaN high electron mobility transistors with InGaN back-barriers T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra IEEE Electron device letters 27 (1), 13-15, 2005 | 493 | 2005 |
| Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition S Heikman, S Keller, SP DenBaars, UK Mishra Applied Physics Letters 81 (3), 439-441, 2002 | 476 | 2002 |
| High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates H Xing, Y Dora, A Chini, S Heikman, S Keller, UK Mishra IEEE Electron Device Letters 25 (4), 161-163, 2004 | 473 | 2004 |
| AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy IP Smorchkova, L Chen, T Mates, L Shen, S Heikman, B Moran, S Keller, ... Journal of Applied Physics 90 (10), 5196-5201, 2001 | 426 | 2001 |
| High breakdown GaN HEMT with overlapping gate structure NQ Zhang, S Keller, G Parish, S Heikman, SP DenBaars, UK Mishra IEEE Electron Device Letters 21 (9), 421-423, 2000 | 404 | 2000 |
| A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz Y Wu, M Jacob-Mitos, ML Moore, S Heikman IEEE Electron Device Letters 29 (8), 824-826, 2008 | 329 | 2008 |
| Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures S Heikman, S Keller, Y Wu, JS Speck, SP DenBaars, UK Mishra Journal of applied physics 93 (12), 10114-10118, 2003 | 283 | 2003 |
| Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005 | 251 | 2005 |
| Normally-off semiconductor devices S Heikman, Y Wu US Patent 7,985,986, 2011 | 247 | 2011 |
| Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors C Poblenz, P Waltereit, S Rajan, S Heikman, UK Mishra, JS Speck Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004 | 226 | 2004 |
| Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures S Keller, G Parish, PT Fini, S Heikman, CH Chen, N Zhang, SP DenBaars, ... Journal of applied physics 86 (10), 5850-5857, 1999 | 220 | 1999 |
| Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys D Jena, S Heikman, D Green, D Buttari, R Coffie, H Xing, S Keller, ... Applied physics letters 81 (23), 4395-4397, 2002 | 210 | 2002 |
| 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate A Chini, D Buttari, R Coffie, S Heikman, S Keller, UK Mishra Electronics Letters 40 (1), 1, 2004 | 194 | 2004 |
| Gallium nitride based transistors H Xing, S Keller, YF Wu, L McCarthy, IP Smorchkova, D Buttari, R Coffie, ... Journal of Physics: Condensed Matter 13 (32), 7139, 2001 | 171 | 2001 |
| Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers IP Smorchkova, S Keller, S Heikman, CR Elsass, B Heying, P Fini, ... Applied Physics Letters 77 (24), 3998-4000, 2000 | 142 | 2000 |
| High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation L Shen, R Coffie, D Buttari, S Heikman, A Chakraborty, A Chini, S Keller, ... IEEE Electron Device Letters 25 (1), 7-9, 2004 | 140 | 2004 |
| Origin of etch delay time in dry etching of AlGaN/GaN structures D Buttari, A Chini, T Palacios, R Coffie, L Shen, H Xing, S Heikman, ... Applied physics letters 83 (23), 4779-4781, 2003 | 129 | 2003 |
| Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE S Rajan, P Waltereit, C Poblenz, SJ Heikman, DS Green, JS Speck, ... IEEE Electron Device Letters 25 (5), 247-249, 2004 | 128 | 2004 |
| Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs A Chini, D Buttari, R Coffie, L Shen, S Heikman, A Chakraborty, S Keller, ... IEEE Electron Device Letters 25 (5), 229-231, 2004 | 126 | 2004 |
Alessandro ChiniProfessor of Electronics, University of Modena and Reggio Emilia, ItalyVerified email at unimore.it
