Bulk planar junctionless transistor (BPJLT): An attractive device alternative for scaling S Gundapaneni, S Ganguly, A Kottantharayil
IEEE Electron device letters 32 (3), 261-263, 2011
267 2011 Effect of band-to-band tunneling on junctionless transistors S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ...
IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012
233 2012 Enhanced Electrostatic Integrity of Short-Channel Junctionless Transistor With High- Spacers S Gundapaneni, S Ganguly, A Kottantharayil
IEEE Electron Device Letters 32 (10), 1325-1327, 2011
171 2011 Graphene nanosheets derived from plastic waste for the application of DSSCs and supercapacitors S Pandey, M Karakoti, K Surana, PS Dhapola, B SanthiBhushan, ...
Scientific Reports 11 (1), 3916, 2021
92 2021 Double-channel AlGaN/GaN high electron mobility transistor with back barriers A Kamath, T Patil, R Adari, I Bhattacharya, S Ganguly, RW Aldhaheri, ...
IEEE electron device letters 33 (12), 1690-1692, 2012
71 2012 Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ...
Journal of Applied Physics 113 (3), 2013
47 2013 Threshold voltage variability in nanosheet GAA transistors PH Vardhan, S Ganguly, U Ganguly
IEEE Transactions on Electron Devices 66 (10), 4433-4438, 2019
44 2019 Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, M Meer, N Bhardwaj, S Ganguly, D Saha
IEEE Electron Device Letters 40 (1), 67-70, 2018
40 2018 Thermally Grown TiO2 and Al2 O3 for GaN-Based MOS-HEMTs A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ...
IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018
40 2018 Analytical estimation of threshold voltage variability by metal gate granularity in FinFET PH Vardhan, S Mittal, S Ganguly, U Ganguly
IEEE Transactions on Electron Devices 64 (8), 3071-3076, 2017
31 2017 Realization of high quality silicon nitride deposition at low temperatures VK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D Saha
Journal of Applied Physics 126 (11), 2019
29 2019 Electrical spin injection using GaCrN in a GaN based spin light emitting diode D Banerjee, R Adari, S Sankaranarayan, A Kumar, S Ganguly, ...
Applied Physics Letters 103 (24), 2013
28 2013 Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric A Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D Saha
IEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019
22 2019 Strong size dependency on the carrier and photon dynamics in InGaN/GaN single nanowalls determined using photoluminescence and ultrafast transient absorption spectroscopy S Chouksey, S Sankaranarayanan, V Pendem, PK Saha, S Ganguly, ...
Nano Letters 17 (8), 4596-4603, 2017
21 2017 Bias-voltage-controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes S Ganguly, LF Register, S Banerjee, AH MacDonald
Physical Review B 71 (24), 245306, 2005
19 2005 Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application R Sarkar, S Bhunia, D Nag, BC Barik, K Das Gupta, D Saha, S Ganguly, ...
Applied Physics Letters 115 (6), 2019
18 2019 Reduced contact resistance and improved transistor performance by surface plasma treatment on ohmic regions in AlGaN/GaN HEMT heterostructures YK Yadav, BB Upadhyay, M Meer, S Ganguly, D Saha
physica status solidi (a) 215 (9), 1700656, 2018
18 2018 State transitions and decoherence in the avian compass VS Poonia, D Saha, S Ganguly
Physical Review E 91 (5), 052709, 2015
18 2015 Modulation bandwidth of a spin laser D Banerjee, R Adari, M Murthy, P Suggisetti, S Ganguly, D Saha
Journal of Applied Physics 109 (7), 2011
17 2011 Spintronic transistor S Kaushal, K Sugishima, S Ganguly
US Patent 7,342,244, 2008
17 2008