Optoelectronic resistive random access memory for neuromorphic vision sensors F Zhou, Z Zhou, J Chen, TH Choy, J Wang, N Zhang, Z Lin, S Yu, J Kang, ... Nature nanotechnology 14 (8), 776-782, 2019 | 864 | 2019 |
High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer J Wang, Q Yao, CW Huang, X Zou, L Liao, S Chen, Z Fan, K Zhang, W Wu, ... Advanced materials 28 (37), 8302-8308, 2016 | 476 | 2016 |
Interface engineering for high-performance top-gated MoS2 field effect transistors L Liao, X Zou 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 336 | 2014 |
Metallic vanadium disulfide nanosheets as a platform material for multifunctional electrode applications Q Ji, C Li, J Wang, J Niu, Y Gong, Z Zhang, Q Fang, Y Zhang, J Shi, L Liao, ... Nano letters 17 (8), 4908-4916, 2017 | 259 | 2017 |
Bioinspired in-sensor visual adaptation for accurate perception F Liao, Z Zhou, BJ Kim, J Chen, J Wang, T Wan, Y Zhou, AT Hoang, ... Nature Electronics 5 (2), 84-91, 2022 | 236 | 2022 |
Rational design of sub-parts per million specific gas sensors array based on metal nanoparticles decorated nanowire enhancement-mode transistors X Zou, J Wang, X Liu, C Wang, Y Jiang, Y Wang, X Xiao, JC Ho, J Li, ... Nano letters 13 (7), 3287-3292, 2013 | 149 | 2013 |
Remarkably enhanced hydrogen generation of organolead halide perovskites via piezocatalysis and photocatalysis M Wang, Y Zuo, J Wang, Y Wang, X Shen, B Qiu, L Cai, F Zhou, SP Lau, ... Advanced Energy Materials 9 (37), 1901801, 2019 | 143 | 2019 |
High‐Sensitivity Floating‐Gate Phototransistors Based on WS2 and MoS2 F Gong, W Luo, J Wang, P Wang, H Fang, D Zheng, N Guo, J Wang, ... Advanced Functional Materials 26 (33), 6084-6090, 2016 | 141 | 2016 |
Floating Gate Memory‐based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics J Wang, X Zou, X Xiao, L Xu, C Wang, C Jiang, JC Ho, T Wang, J Li, ... Small 11 (2), 208-213, 2015 | 116 | 2015 |
Transparent, High‐Performance Thin‐Film Transistors with an InGaZnO/Aligned‐SnO2‐Nanowire Composite and their Application in Photodetectors X Liu, X Liu, J Wang, C Liao, X Xiao, S Guo, C Jiang, Z Fan, T Wang, ... Advanced Materials 26 (43), 7399-7404, 2014 | 98 | 2014 |
Integration of High‐k Oxide on MoS2 by Using Ozone Pretreatment for High‐Performance MoS2 Top‐Gated Transistor with Thickness‐Dependent Carrier … J Wang, S Li, X Zou, J Ho, L Liao, X Xiao, C Jiang, W Hu, J Wang, J Li small 11 (44), 5932-5938, 2015 | 93 | 2015 |
Rational design of ZnO: H/ZnO bilayer structure for high-performance thin-film transistors A Abliz, CW Huang, J Wang, L Xu, L Liao, X Xiao, WW Wu, Z Fan, C Jiang, ... ACS Applied Materials & Interfaces 8 (12), 7862-7868, 2016 | 83 | 2016 |
Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high‐performance 2D field effect transistors X Zou, CW Huang, L Wang, LJ Yin, W Li, J Wang, B Wu, Y Liu, Q Yao, ... Advanced Materials 28 (10), 2062-2069, 2016 | 83 | 2016 |
Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO: H layer A Abliz, J Wang, L Xu, D Wan, L Liao, C Ye, C Liu, C Jiang, H Chen, ... Applied Physics Letters 108 (21), 2016 | 64 | 2016 |
Low‐power complementary inverter with negative capacitance 2D semiconductor transistors J Wang, X Guo, Z Yu, Z Ma, Y Liu, Z Lin, M Chan, Y Zhu, X Wang, Y Chai Advanced Functional Materials 30 (46), 2003859, 2020 | 63 | 2020 |
Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors A Abliz, L Xu, D Wan, H Duan, J Wang, C Wang, S Luo, C Liu Applied Surface Science 475, 565-570, 2019 | 63 | 2019 |
A Reconfigurable Two‐WSe2‐Transistor Synaptic Cell for Reinforcement Learning Y Zhou, Y Wang, F Zhuge, J Guo, S Ma, J Wang, Z Tang, Y Li, X Miao, ... Advanced Materials 34 (48), 2107754, 2022 | 57 | 2022 |
Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors JI Qin, F Zhou, J Wang, J Chen, C Wang, X Guo, S Zhao, Y Pei, L Zhen, ... ACS Nano, 2020 | 49 | 2020 |
Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors B Jiang, X Zou, J Su, J Liang, J Wang, H Liu, L Feng, C Jiang, F Wang, ... Advanced Functional Materials 28 (26), 1801398, 2018 | 47 | 2018 |
Side‐Gated In2O3 Nanowire Ferroelectric FETs for High‐Performance Nonvolatile Memory Applications M Su, Z Yang, L Liao, X Zou, JC Ho, J Wang, J Wang, W Hu, X Xiao, ... Advanced Science 3 (9), 2016 | 44 | 2016 |